A5103157192- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Quantum Dots Synthesis And Properties
- Chalcogenide Semiconductor Thin Films
- Ion-surface interactions and analysis
- Silicon Nanostructures and Photoluminescence
- Semiconductor Quantum Structures and Devices
- GaN-based semiconductor devices and materials
- ZnO doping and properties
- Thin-Film Transistor Technologies
- Advanced Materials Characterization Techniques
- solar cell performance optimization
- Copper-based nanomaterials and applications
- Advancements in Semiconductor Devices and Circuit Design
- nanoparticles nucleation surface interactions
- Nanowire Synthesis and Applications
- Electron and X-Ray Spectroscopy Techniques
- Radiation Effects in Electronics
- Advanced Electron Microscopy Techniques and Applications
- 2D Materials and Applications
- Photonic and Optical Devices
- Perovskite Materials and Applications
- Electronic and Structural Properties of Oxides
University of Padua
1995-2018
National Interuniversity Consortium for the Physical Sciences of Matter
2011
Istituto Nazionale di Fisica Nucleare, Sezione di Padova
1993-2005
Istituto Nazionale per la Fisica della Materia
1998-2004
Azienda Ospedaliera di Desio e Vimercate
2002
Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali del Sud
1994
National Institute for Astrophysics
1993-1994
Abstract One of the crucial points in production CdTe solar cells is insertion copper back contact and absorber. As demonstrated by top performing devices presented literature: necessary for high efficiency devices. However, despite this, was found to be a fast diffuser degrading cell long term. Different approaches limiting this effect have been widely from several laboratories, preparation Cu x Te controlled evaporation application ZnTe, which incorporates Cu, blocking its diffusion bulk....
In this work, for the first time, CdSe is applied as a buffer layer on thermally evaporated Sb2Se3-based solar cells superstrate configuration. The influence of growth Sb2Se3 and performance finished devices have been analyzed compared with typical CdS/Sb2Se3 junction. Selenium vacancies in thin film act recombination centres, reason applying an excessive amount Se beneficial to devices. case structure, high concentration gradient enhances selenium diffusion into CdS sulphur resulting...
Recently, the introduction of a CdSexTe1-x (CST) buffer in CdTe absorber has increased photon absorption at both short wavelengths visible range (by removal parasitic CdS layer) and infrared reduction band gap). But, moreover, efficiency improvement is also attributed to longer minority carrier lifetime when Se added. This paper presents CdSexTe1-x/CdTe devices fabricated by evaporation low substrate temperature with reduced thickness (2 µm). These cells achieve record current densities,...
In this work, a new hybrid sputtering–evaporation system providing scalable process for deposition of Cu(In,Ga)Se2 (CIGS) layers is presented. The growth apparatus has been designed and realized to fit size suitable direct industrial transfer. the metal precursors are first all sputtered on rotating transfer devices, then evaporated substrate by local heating in Se atmosphere. desired thickness composition CIGS film obtained repeated cycles. cylindrical geometry chamber accommodate different...
Photoluminescence spectra of pure CIGS thin films with different Ga in-depth gradients are systematically investigated. Pure Na-free prepared an innovative hybrid deposition technique, whose optical luminescence emission is analyzed as a function the depth and correlated to radiative intrinsic defects material. Finally, highlighted features performances test solar cells same growths.
Aluminum ions at 100 MeV were implanted into floating-zone (FZ) and Czochralski (CZ) grown Si substrates. At this energy the influence of surface on subsequent thermal treatment is negligible. In FZ samples electrical active dose, as measured by spreading resistance profilometry, independent annealing time 1200 °C. CZ instead it considerably decreases with time. Secondary ion mass spectrometry analysis in have revealed presence a multipeak structure around projected range region for both Al...
Abstract Structures composed of a p ++ (Zn)GaAs layer deposited by MOVPE on n(Te)‐doped GaSb substrate were fabricated, with the purpose obtaining p‐n homo‐junctions, through diffusion Zn into substrate, for photovoltaic applications. Different doping levels and post‐growth annealing parameters investigated. The junctions characterized from electrical point view I‐V measurements, while profiles studied SIMS analysis. effective achievement buried junction, whose profile is limited was...
In the thin film solar cells domain, copper indium galium (di)selenide (CIGS) is a material with well-established photovoltaic purpose. Here presence of suitable [Ga]/([Ga]+[In]) (GGI) in-depth profile has proved to play key role in performance cells. The implementation routine method based on reliable but easily available experimental techniques mandatory obtain information GGI any CIGS layer, order achieve high efficiency chalcogenide layers. this vein, we here propose and systematically...
The integration of transition metal dichalcogenides (TMDs) thin films into Si CMOS-based devices requires the development new bottom-up material growth approaches producing high crystallinity without affecting SiO2/Si substrate. For this purpose, sputtering is a suitable deposition method due to its simplicity, jointly with reliability and large area capabilities. However, sputtered layers are amorphous require post-deposition thermal treatment obtain highly crystalline film. Nanosecond...
Cobalt phosphide thin films were grown by metal-organic chemical vapor deposition (MOCVD) in atmospheres on InP(001) substrates using bis(η-methylcyclopentadienyl)Co(II) and phophine precursors at 550°C. Film microstructure, composition, morphology investigated detail X-ray diffraction, photoelectron spectroscopy (XPS), Rutherford backscattering (RBS), atomic force microscopy. Films crystalline consisted mainly of the orthorhombic CoP phase some amount phase. XPS measurements indicate an...
We report on a spectroscopic characterization of electrically compensated high resistivity Fe-implanted InP and GaInP by room temperature space-charge-limited-current measurements. This method results to be reliable powerful tool obtain quantification the degree compensation free carrier concentration in samples, together with activation energy density states distribution dominant majority traps. Moreover, correlating these dependent electrical spectroscopy analyses, it is possible...
The dependence of the hole mobility on dopant concentration ranging from to was determined at room temperature in Al-implanted Si samples. trend obtained by use Hall effect and resistivity measurements van der Pauw pattern combination with secondary-ion mass spectrometry spreading resistance analysis. data are a quite good agreement Wagner curve for boron high Al region while they approach Thurber curves low concentrations. This result indicates that neutral ionized impurity scattering...