D. De Salvador
A5021115563- Silicon and Solar Cell Technologies
- Crystallography and Radiation Phenomena
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Nuclear materials and radiation effects
- Ion-surface interactions and analysis
- Silicon Nanostructures and Photoluminescence
- Thin-Film Transistor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor Quantum Structures and Devices
- Radiation Detection and Scintillator Technologies
- Particle physics theoretical and experimental studies
- Advanced Electron Microscopy Techniques and Applications
- Advanced X-ray Imaging Techniques
- Particle Accelerators and Free-Electron Lasers
- GaN-based semiconductor devices and materials
- Particle Detector Development and Performance
- Microstructure and mechanical properties
- Electron and X-Ray Spectroscopy Techniques
- Advanced Semiconductor Detectors and Materials
- Nuclear Physics and Applications
- Diamond and Carbon-based Materials Research
- X-ray Spectroscopy and Fluorescence Analysis
- Advanced Materials Characterization Techniques
- Nanowire Synthesis and Applications
University of Padua
2015-2024
Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro
2015-2024
Istituto Nazionale di Fisica Nucleare
2018-2023
Wuhan University
2022
University of Milan
2022
Belarusian State University
2022
Istituto Nazionale di Fisica Nucleare, Sezione di Padova
2008-2019
Istituto Nazionale di Fisica Nucleare, Galileo Galilei Institute for Theoretical Physics
2015-2019
Team Production (Denmark)
2019
Institute for Microelectronics and Microsystems
2013-2017
B migration in Si and Ge matrices raised a vast attention because of its influence on the production confined, highly p-doped regions, as required by miniaturization trend. In this scenario, diffusion atoms can take place under severe conditions, often concomitant, such very large concentration gradients, non-equilibrium point defect density, amorphous-crystalline transition, extrinsic doping level, co-doping, clusters formation dissolution, ultra-short high-temperature annealing. paper, we...
The volume reflection phenomenon was detected while investigating 400 GeV proton interactions with bent silicon crystals in the external beam H8 of CERN Super Proton Synchrotron. Such a process observed for wide interval crystal orientations relative to axis, and its efficiency exceeds 95%, thereby surpassing any previously value. These observations suggest new perspectives manipulation high-energy beams, e.g., collimation extraction new-generation hadron colliders, such as Large Hadron...
We report the observation of efficient steering a 855 MeV electron beam at MAMI (MAinzer MIkrotron) facilities by means planar channeling and volume reflection in bent silicon crystal. A 30.5 μm thick plate (211) oriented Si was to cause quasimosaic deformation (111) crystallographic planes, which were used for coherent interaction with beam. The experimental results are analogous those recorded some years ago energy higher than 100 GeV, is only comparable study date. Monte Carlo simulations...
The diffusion and activation of arsenic implanted into germanium at 40 keV with maximum concentrations below above the solid solubility (8 × 1019 cm−3) have been studied, both experimentally theoretically, after excimer laser annealing (λ = 308 nm) in melting regime different energy densities single or multiple pulses. Arsenic is observed to diffuse similarly for fluences no out-diffusion formation pile-up melt depth. profiles satisfactorily simulated by assuming two diffusivity states As...
The radiation emitted by 855 MeV electrons via planar channeling and volume reflection in a $30.5\text{\ensuremath{-}}\ensuremath{\mu}\mathrm{m}$-thick bent Si crystal has been investigated at the MAMI (Mainzer Mikrotron) accelerator. spectral intensity was much more intense than for an equivalent amorphous material, peaked range case of radiation. Differently from straight crystal, also incidence angle larger Lindhard angle, remains nearly as high channeling. This is due to reflection,...
Theoretical predictions as well experiments performed at storage rings have shown that the lifetimes of β-radionuclides can change significantly a function ionization state. In this paper we describe an innovative approach, based on use compact plasma trap to emulate selected stellar-like conditions. It has been proposed within PANDORA project (Plasmas for Astrophysics, Nuclear Decay Observation and Radiation Archaeometry) with aim measure, first time in plasma, nuclear β-decay rates...
The precise C content of a series Si1−yCy epilayer samples (0<y<0.012) was determined by resonant backscattering experiments using He+4 ion beam at 5.72 MeV. This energy is more suitable for the determination than previously used 4.265 From correlation these investigations with x-ray diffraction experiments, significant deviation lattice parameter variation in from Vegard’s rule between Si and diamond or β-SiC observed, which amounts up to 30% 13%, respectively, y<0.012....
In this work the Si self-interstitial--carbon interaction has been experimentally investigated and modeled. The interactions between self-interstitials, produced by 20-keV silicon implantation, substitutional carbon in have studied using a ${\mathrm{Si}}_{1\ensuremath{-}y}{\mathrm{C}}_{y}$ layer grown molecular beam epitaxy (MBE) interposed near-surface self-interstitial source deeper B spike used as marker for Si-interstitial concentration. C atoms, all incorporated sites with C-dose range...
A setup of two bent crystals and a fixed target in the CERN Large Hadron Collider (LHC) could enable study magnetic (MDM) electric (EDM) dipole moments short-lived charm baryons with unprecedented accuracy. At core experiment is crystal which particles interest, such as $\Lambda_c^+$ $\Xi_c^+$ particles, can be confined between crystalline planes, inducing deflection that enforces spin precession measurable by detectors. The requires inside LHC vacuum to create charmed baryons. first serves...
Although inorganic scintillators are widely used in the design of electromagnetic calorimeters for high-energy physics and astrophysics, their crystalline nature and, hence, lattice orientation generally neglected detector design. However, general, features field experienced by particles impinging on a crystal at small angle with respect to axis affect interaction mechanisms. In particular, case electrons/photons (10 GeV) or higher high- Z an ≲ 1 mrad, so-called strong regime is attained:...
The introduction of carbon into silicon-germanium--based heterostructures offers increased flexibility in tailoring their strain state and electronic properties. Still, however, fundamental physical properties such as the lattice parameter elastic ${\mathrm{Si}}_{1\ensuremath{-}x\ensuremath{-}y}{\mathrm{Ge}}_{x}{\mathrm{C}}_{y}$ random alloys are not precisely known. In this paper, we present a quantitative study effect on technologically relevant range Ge C compositions. A strong deviation...
This paper presents a detailed study of the deflection phenomena $400\text{ }\text{ }\mathrm{GeV}/c$ proton beam impinging on new generation bent silicon crystals; tests have been performed at CERN Super Proton Synchrotron H8 line. Channeling and volume reflection angles are measured with an extremely precise goniometer high resolution microstrip detectors. Volume has observed for first time this energy, single-pass efficiency as large 98%, in good agreement simulation results. makes...
The new generation of hadron machines may profitably take advantage channeling for steering and collimation high-energy particle beams. In that case, the requirements on quality crystal surface are rather stringent in terms both lattice perfection roughness. Here, authors show structural morphological characterizations crystals fabricated through a method to achieve fulfills all needed specifications application machines.
The radiation emitted by $120\text{ }\text{ }\mathrm{GeV}/c$ electrons traversing a single bent crystal under multiple volume reflection orientation is investigated. Multiple in one occurs as charged particle impacts on at several axial channeling angles with respect to axis. resulting energy-loss spectrum of was very intense over the full energy range up nominal beam. As compared emission an individual reflection, more and peaks 3 times greater. Experimental results are theoretical approach...
Doping of Si nanocrystals (NCs) has been the subject a strong experimental and theoretical debate for more than decade. A major difficulty in understanding dopant incorporation at nanoscale is related to fact that calculations usually refer thermodynamic equilibrium conditions, whereas, from point view, impurity commonly performed during NC formation. This latter circumstance makes impossible experimentally decouple properties kinetic effects. In this report, we approach problem by...
Bent silicon crystals mounted on high-accuracy angular actuators were installed in the CERN Super Proton Synchrotron (SPS) and extensively tested to assess feasibility of crystal-assisted collimation circular hadron colliders. The adopted layout was exploited regularly upgraded for about a decade by UA9 Collaboration. investigations provided compelling evidence strong reduction beam losses induced nuclear inelastic interactions aligned comparison with amorphous orientation. A conceptually...
In this work, we have investigated the stoichiometry of boron-interstitial clusters (BICs) produced in a molecular-beam-epitaxy-grown B box by Si implantation and annealing, their dissolution during further prolonged annealing cycles. Low-concentration delta doping was used to quantitatively monitor interstitial (I) flux. A stoichiometric ratio about 1.2 between I found for BICs formed at 815 °C. The BIC kinetics analyzing concentration profiles different times temperatures (in range 815–950...
We have elucidated the mechanism for B migration in amorphous (a-) Si network. diffusivity a-Si is much higher than crystalline Si; it transient and increases with concentration up to 2 x 10(20) B/cm(3). At density, atoms quickly precipitate. diffusion indirect, mediated by dangling bonds (DB) present a-Si. The density of DB enhanced accommodation network decreases because relaxation. Accurate data simulations allow one extract diffusivity, whose activation energy 2.6 eV. Implications these...
Deuterium (hydrogen) incorporation in dilute nitrides (e.g., GaAsN and GaPN) modifies dramatically the crystal's electronic structural properties represents a prominent example of defect engineering semiconductors. However, microscopic origin D-related effects is still an experimentally unresolved issue. In this paper, we used nuclear reaction analyses and/or channeling, high resolution x-ray diffraction, photoluminescence, absorption fine structure measurements to determine how...
B diffusion in crystalline Ge is investigated by proton irradiation thin layers with delta doping under different fluences $(1\ifmmode\times\else\texttimes\fi{}{10}^{15}--10\ifmmode\times\else\texttimes\fi{}{10}^{15}\text{ }{\text{H}}^{+}/{\text{cm}}^{2})$, fluxes $(6\ifmmode\times\else\texttimes\fi{}{10}^{11}--35\ifmmode\times\else\texttimes\fi{}{10}^{11}\text{ }{\text{H}}^{+}/{\text{cm}}^{2}\text{ }\text{s})$, and temperatures of the implanted target (from $\ensuremath{-}196$ to $550\text{...
The interaction of a 2 MeV proton beam with an ultrathin unbent Si crystal was studied through simulation and experiment. Crystal thickness along the set at 92 nm, i.e., half oscillation wavelength protons in under planar channeling condition. As nominal direction is inclined by less than critical angle for respect to planes, under-barrier particles undergo exit reversal transverse momenta; are ``mirrored'' planes. Over-barrier suffer deflection, too, opposite that mirroring dynamics similar...