A5018885631- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
- solar cell performance optimization
- Organic Electronics and Photovoltaics
- Silicon Carbide Semiconductor Technologies
- Thermal Radiation and Cooling Technologies
- Semiconductor materials and devices
- Laser Material Processing Techniques
- Nanowire Synthesis and Applications
- Advanced Memory and Neural Computing
- Advanced Thermodynamics and Statistical Mechanics
- Conducting polymers and applications
- Advanced Surface Polishing Techniques
- Molecular Junctions and Nanostructures
- Advancements in Semiconductor Devices and Circuit Design
- Near-Field Optical Microscopy
- Copper-based nanomaterials and applications
- Gas Sensing Nanomaterials and Sensors
- Photonic Crystals and Applications
- Neuroscience and Neural Engineering
- Ion-surface interactions and analysis
- Chalcogenide Semiconductor Thin Films
Universitat Politècnica de Catalunya
2015-2024
FC Barcelona
2017-2020
Capita (United Kingdom)
2017
Polytec (Germany)
2015
Universidad de Salamanca
2012
Institute of Micro and Nanotechnology
2009
Universitat Rovira i Virgili
2001
Ni/V<sub>2</sub>O<sub>x</sub>stacks applied to an interdigitated back-contacted n-type c-Si solar cell structure are explored, reaching efficiencies up 19.7%.
Excellent passivation properties of intrinsic amorphous silicon carbide (a-SiCx:H) films deposited by plasma enhanced chemical vapor deposition on single-crystalline (c-Si) wafers have been obtained. The dependence the effective surface recombination velocity, Seff, temperature, total pressure and methane (CH4) to silane (SiH4) ratio has studied for these using lifetime measurements made with quasi-steady-state photoconductance technique. lifetime, τeff, excess carrier density, Δn, measured...
A new Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub>/Mg electron-contact scheme together with a V<sub>2</sub>O<sub>x</sub>-based hole-contact is applied to cold-IBC solar cells achieving efficiencies beyond 19%.
Transition metal oxides (TMOs) are promising materials to develop selective contacts on high-efficiency crystalline silicon solar cells. Nevertheless, the standard deposition technique used for TMOs is thermal evaporation, which could add potential scalability problems industrial photovoltaic fabrication processes. As an alternative, atomic layer (ALD) a thin film already dielectric in semiconductor device industry that has straightforward up scalable design. This work reports results of...
ABSTRACT In this work we study the optimization of laser‐fired contact (LFC) processing parameters, namely laser power and number pulses, based on electrical resistance measurement an aluminum single LFC point. process has been made through four passivation layers that are typically used in c‐Si mc‐Si solar cell fabrication: thermally grown silicon oxide (SiO 2 ), deposited phosphorus‐doped amorphous carbide (a‐SiC x /H( n )), (Al O 3 ) nitride (SiN /H) films. Values for normalized by spot...
A bacterial strain designated M1MS02 T was isolated from a surface-sterilized nodule of Medicago sativa in Zamora (Spain). The 16S rRNA gene sequence this showed 96.5 and 96.2 % similarity, respectively, with respect to Gluconacetobacter liquefaciens IFO 12388 Granulibacter bethesdensis CGDNIH1 the family Acetobacteraceae . novel isolate Gram-stain-negative, non-sporulating, aerobic coccoid rod-shaped bacterium that motile by subpolar flagellum. major fatty acid C 18 : 1 ω7 c ubiquinone...
This work highlights the impact of growth temperature on electrical and optical properties Al-doped ZnO (AZO) films deposited by atomic layer deposition (ALD) technique. The ALD process super-cycle sequence have been optimized, identifying their influence film resistivity. By using this optimum procedure, AZO widely analyzed considering temperature. Results show promising values with resistivity in range 1 mΩcm average absorption below 2% for 50 nm thick layers. Hall effect, X-ray...
This article studies theoretically and experimentally the recombination at amorphous/crystalline silicon interface of a heterojunction with intrinsic thin layer (HIT) structure without metallization. We propose physical model to calculate rate under illumination. calculates effective lifetime τeff as function average excess minority carrier concentration ⟨Δn⟩. In order test model, we prepared set HIT structures. The dependence vs ⟨Δn⟩ samples is measured using quasi-steady-state...
The aim of this work is to study the surface passivation aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline (c-Si) substrates as well optical characterization these stacks. Al2O3 films different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C complemented with a a-SiCx plasma-enhanced chemical vapor (PECVD) form anti-reflection coating (ARC) total thickness 75 nm. A comparative has been carried out polished...
Excellent passivation of n-type crystalline silicon surface is demonstrated by means intrinsic amorphous carbide (a-SiCx:H) thin films. An optimum CH4/SiH4 ratio determined, leading to an effective recombination velocity, Seff, lower than 54 cm s−1. By adding a constant flow N2 the precursor gases, improved Seff⩽16 From infrared spectroscopy measurements these films, it can be deduced that increases carbon content layers for ratio. The dependence lifetime, τeff, on excess charge carrier...
Abstract We explore the potential of laser processing aluminium oxide (Al 2 O 3 )/amorphous silicon carbide (a‐SiC x :H) stacks to be used at rear surface p‐type crystalline (c‐Si) solar cells. For this stack, excellent quality passivation is measured with effective recombination velocities as low cm/s. By means an infrared laser, dielectric film locally opened. Simultaneously, part in Al introduced into c‐Si, creating p+ regions that allow ohmic contacts low‐surface velocities. At optimum...
The interdigitated back-contacted (IBC) solar cell concept has been extensively studied for single-junction cells and more recently as a good choice three-terminal tandem devices. In this work, carrier-selective contacts based on transition metal oxides deposited by atomic layer deposition (ALD) technique are applied to IBC c-Si(n) the first part of study, we develop hole-selective contact thin ALD vanadium oxide (V2O5) layers without using an amorphous silicon interlayer. process optimised,...
Cutting costs by progressively decreasing substrate thickness is a common theme in the crystalline silicon photovoltaic industry for last decades, since drastically thinner wafers would significantly reduce substrate-related costs. In addition to technological challenges concerning wafering and handling of razor-thin flexible wafers, major bottleneck maintain high absorption those thin wafers. For latter, advanced light-trapping techniques become paramount importance. Here we demonstrate...
A completely dry low-temperature process has been developed to passivate 3.3 Ω cm p-type crystalline silicon surface with excellent results. Particularly, we have investigated the use of a hydrogen plasma treatment, just before hydrogenated amorphous carbide (a-SiCx:H) deposition, without breaking vacuum. We measured effective lifetime, τeff, through quasi-steady-state photoconductance technique. Experimental results show that treatment improves passivation compared classical HF dip. Seff...
Surface-passivating properties of hydrogenated amorphous silicon carbide films (a-SiCx:H) deposited by plasma-enhanced chemical-vapor deposition on both p- and n-type crystalline (c-Si) have been extensively studied our research group in previous publications. We characterized surface recombination measuring the dependence effective lifetime (τeff) excess carrier density (Δn) through quasi-steady-state photoconductance technique. Additionally, we fitted measured τeff(Δn) curves applying an...