A5027053331- Quantum Dots Synthesis And Properties
- Nanowire Synthesis and Applications
- 2D Materials and Applications
- ZnO doping and properties
- Advanced Sensor and Energy Harvesting Materials
- Thin-Film Transistor Technologies
- Perovskite Materials and Applications
- Conducting polymers and applications
- MXene and MAX Phase Materials
- Tactile and Sensory Interactions
- Advanced Memory and Neural Computing
- Molecular Junctions and Nanostructures
- Semiconductor Quantum Structures and Devices
- Electrochemical Analysis and Applications
- Graphene research and applications
- Image and Video Quality Assessment
- Advanced battery technologies research
- Chalcogenide Semiconductor Thin Films
- Advanced Computing and Algorithms
- Transition Metal Oxide Nanomaterials
- Electrical and Thermal Properties of Materials
- Supercapacitor Materials and Fabrication
- Advanced Materials and Mechanics
- Photoreceptor and optogenetics research
- Gold and Silver Nanoparticles Synthesis and Applications
Seoul National University
2018-2025
Incheon National University
2015-2021
The remarkable progress of virtual reality, augmented quantum dot light-emitting diode, and organic diode as next-generation displays has overcome the leadership liquid crystal display during last two years. This paper discusses key technological advancements performance these new-generation devices.
This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, poly(vinyl alcohol) (PVA). Collections these types physically transient a-IGZO TFTs 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2×10(6)), subthreshold slopes (∼220 mV/dec), Ohmic...
Abstract Conventional stretchable electronics that adopt a wavy design, neutral mechanical plane, and conformal contact between abiotic biotic interfaces have exhibited diverse skin‐interfaced applications. Despite such remarkable progress, the evolution of intelligent skin prosthetics is challenged by absence monolithic integration neuromorphic constituents into individual sensing actuating components. Herein, bioinspired sensory‐neuromorphic system, comprising an artificial...
Virtual reality, augmented quantum dot light-emitting diodes, and organic diodes have progressed over the last two years. Key achievements in these displays are discussed terms of device performance.
Quantum dots (QDs) have garnered a significant amount of attention as promising memristive materials owing to their size-dependent tunable bandgap, structural stability, and high level applicability for neuromorphic computing. Despite these advantageous properties, the development QD-based memristors has been hindered by challenges in understanding adjusting resistive switching (RS) behavior QDs. Herein, we propose three types InP/ZnSe/ZnS elucidate RS mechanism, employing thin poly(methyl...
We demonstrated highly stable multilayer molybdenum disulfide (MoS2) field-effect transistors (FETs) with negligible hysteresis gap (ΔVHYS ∼ 0.15 V) via a multiple annealing scheme, followed by systematic investigation for long-term air stability time (∼50 days) of MoS2 FETs (or without) CYTOP encapsulation. The extracted lifetime the device passivation in was dramatically improved from 7 to 377 days, and even short-term bias stability, experimental threshold voltage shift, outstandingly...
Active matrix (AM) quantum-dot light-emitting diodes (QLEDs) driven by thin-film transistors (TFTs) have attracted significant attention for use in next-generation displays. Several challenges remain the realisation of AM-QLEDs, such as device design, fabrication process, and integration between QLEDs TFTs, depending on their structures configurations. Herein, efficient stable AM-QLEDs are demonstrated using conventional inverted structured (C- I-QLEDs, respectively) combined with facile...
This paper investigates the low-frequency noise properties of multilayer WSe2 field effect transistors (FETs) in subthreshold, linear, and saturation regime. The measured power spectral density drain current (SID) shows that FET fits well to a 1/fγ law with γ ∼ 1 frequency range 10 Hz–200 Hz. From dependence SID on current, carrier mobility fluctuation is considered as dominant low mechanism from all operation regimes FET. Extracted Hooge's parameter this study within value 0.12, comparable...
Multi-layered MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> inverters with light shielding layers were fabricated and demonstrated for application in highly sensitive photodetectors, exploiting the particular advantages of an atomically thin layer a sizable electrical bandgap. The photoleakage behaviors under changing wavelengths experimentally to occur controlled manner analytically validated by load-line analysis. When operated...
Abstract In recent past, for next‐generation device opportunities such as sub‐10 nm channel field‐effect transistors (FETs), tunneling FETs, and high‐end display backplanes, tremendous research on multilayered molybdenum disulfide (MoS 2 ) among transition metal dichalcogenides has been actively performed. However, nonavailability a matured threshold voltage control scheme, like substitutional doping in Si technology, plagued the prosperity of 2D materials electronics. Herein, an adjustment...
Improving operational stability is one of the most crucial issues for practical application quantum-dot (QD)-based light-emitting diodes (QLEDs), particularly in devices with heavy-metal-free QDs. Although a few potential reasons their instability have been suggested, such as poor charge balance and surface defects QDs, origin degradation needs to be disclosed more clearly achieve higher device stability. Here, we systematically investigate effect excess charges on InP-based QLEDs. For this,...
The authors demonstrate the enhancement mode p-type SnO thin-film transistors (TFTs) using dual gate (DG) structures. cross-linked polyvinyl alcohol dielectric with a polymethylmethacrylate buffer layer is formed as top (TG) insulator of DG TFT. fabricated TFT exhibits better electrical performances than bottom (BG) and TG TFTs including higher field-effect mobility smaller subthreshold slope. In TFTs, threshold voltage (Vth) BG linearly modulated by applied to electrode. transfer curve...
Abstract The development of transition metal dichalcogenides (TMDCs) and quantum dots (QDs) as the promising semiconductor emitter is carried out in diverse applications. Despite superb research progress, study emerging devices incorporated with TMDC thin film transistors (TFTs) dot light‐emitting diodes (QLEDs) rarely reported. Herein, QLEDs operation controlled by p (or n‐type) molybdenum ditelluride (MoTe 2 ) TFTs realization complementary type transistor first demonstrated. In this...
Herein, this study reports scalable and selective n-type conversion (N/C) approach for single walled carbon nanotube (SWNT) transistors with high reproducibility by using novel control of hydroxyl groups through condensation on the surface SWNTs, via patternable cross-linked polyvinyl alcohol (C-PVA), followed encapsulation photo-definable hydrophobic polymer (~SU8). Moreover, N/C process capability is statistically evaluated in terms doping, yield, statistical variation electrical...
Quantum dot light-emitting diodes (QLEDs) with high form factor are attracting great attention owing to the superb optoelectrical properties of quantum dots (QDs) and their ubiquitous application, such as wearable displays. However, there have been significant challenges in increasing brightness flexible QLEDs due inferior thermal conductivity conventional substrates. In this work, we demonstrate bright, flexible, waterproof top-emitting based on InP/ZnSe/ZnS QDs, which promising for...
Abstract Cost‐effective gas‐phase synthesized single walled carbon nanotubes (SWCNTs) were first employed for the surface modification of indium tin oxides (ITO) via electrostatic coating poly‐l‐lysine (PLL). Compared with control substrates bare ITO and SWCNT‐PLL‐slide glasses, SWCNT‐PLL‐ITO, high catalytic properties associated large areas, showed significant improvement electro activity toward oxidation dopamine (DA) uric acid (UA). The cyclic voltammetric (CV) peak separation both DA UA...
Quantum-dot (QD) based light-emitting diodes (QLEDs) have attracted significant attention in state-of-the-art wearable displays owing to the high form factor of QDs with excellent optical/electrical properties. These advantageous properties led notable advancements QLEDs technology, making them flexible, lightweight, and compatible human skin, which meets requirements applications. To make wearable, however, alleviating heat generated under current is an urgent challenge. In this study, we...
Quantum dot light‐emitting diodes (QLEDs) have garnered significant attention due to their outstanding optical and electrical properties. Furthermore, there been many attempts fabricate QLEDs on the flexible substrates for application of wearable devices. However, face challenge instability under thermal heat, low conductivity substrates. In this study, we present InP‐based 1 µm thick polyethylene naphthalate substrates, coated with aluminum heat dissipation. The Al layer can effectively...
In this letter, spray-coated single walled carbon nanotubes (SWNTs) as one of alternative electrodes in SnO thin-film transistors are demonstrated for emerging electronic applications. Herein, the device architecture TFTs with a polymer etch stop layer (SU-8) enables selective etching SWNTs desired region without detrimental effects channel layers. Moreover, SWNT substitutes successfully demonstrate decent width normalized electrical contact properties (~1.49 kΩ cm), field effect mobility...
Abstract Conventional stretchable electronics entailing the adoption of a wavy design, neutral mechanical plane, and conformal contact between abiotic biotic interfaces have shown diverse skin-interfaced applications. Despite such remarkable progress, there been challenged to be evolved intelligent skin prosthetics due absence monolithic integration neuromorphic constituents into individual sensing actuating components. Herein, we demonstrate golden tortoise beetle-inspired...
Multi‐layered MoS 2 inverters with light shielding (LS) layers were fabricated and demonstrated for application in highly sensitive photo detectors, exploiting the particular advantages of an atomically thin layer a sizable electrical band gap. The photoleakage behaviors under changing wavelengths experimentally to occur controlled manner, analytically validated by load‐line analysis. When operated depletion load blue emitting diodes (LEDs), low noise margin (NML) transition width...