A5007888977- Supercapacitor Materials and Fabrication
- Thin-Film Transistor Technologies
- 2D Materials and Applications
- Nanowire Synthesis and Applications
- ZnO doping and properties
- Advanced Sensor and Energy Harvesting Materials
- Advanced battery technologies research
- Perovskite Materials and Applications
- Quantum Dots Synthesis And Properties
- Conducting polymers and applications
- Carbon Nanotubes in Composites
- MXene and MAX Phase Materials
- Advanced Memory and Neural Computing
- Copper-based nanomaterials and applications
- Chalcogenide Semiconductor Thin Films
- Electrocatalysts for Energy Conversion
- Semiconductor materials and devices
- Advancements in Battery Materials
- Organic Electronics and Photovoltaics
- Graphene research and applications
- Ferroelectric and Negative Capacitance Devices
- Transition Metal Oxide Nanomaterials
- Silicon and Solar Cell Technologies
- Nanofabrication and Lithography Techniques
- Advancements in Semiconductor Devices and Circuit Design
Incheon National University
2016-2025
Kyung Hee University
2025
Northwestern University
2022
Seoul National University
2004-2019
Incheon Medical Center
2014-2018
Government of the Republic of Korea
2018
University of Illinois Urbana-Champaign
2010-2014
Samsung (South Korea)
2007-2010
Jeonbuk National University
2007-2008
Busan National University of Education
2006
Materials and designs are presented for electronics sensors that can be conformally robustly integrated onto the surface of skin. A multifunctional device this type record various physiological signals relevant to health wellness. This class technology offers capabilities in biocompatible, non-invasive measurement lie beyond those available with conventional, point-contact electrode interfaces
Reversible control of adhesion is an important feature many desired, existing, and potential systems, including climbing robots, medical tapes, stamps for transfer printing. We present experimental theoretical studies pressure modulated between flat, stiff objects elastomeric surfaces with sharp features surface relief in optimized geometries. Here, the strength nonspecific can be switched by more than three orders magnitude, from strong to weak, a reversible fashion. Implementing these...
Temporary postoperative cardiac pacing requires devices with percutaneous leads and external wired power control systems. This hardware introduces risks for infection, limitations on patient mobility, requirements surgical extraction procedures. Bioresorbable pacemakers mitigate some of these disadvantages, but they demand pairing external, systems secondary mechanisms control. We present a transient closed-loop system that combines time-synchronized, wireless network skin-integrated an...
This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, poly(vinyl alcohol) (PVA). Collections these types physically transient a-IGZO TFTs 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2×10(6)), subthreshold slopes (∼220 mV/dec), Ohmic...
Abstract The origins of gate‐induced hysteresis in carbon nanotube field‐effect transistors are explained and techniques to eliminate this with encapsulating layers methylsiloxane modified processes for growth reported. A combined experimental theoretical analysis the dependence on gate voltage sweep‐rate reveals locations, types, densities defects that contribute hysteresis. Devices designs these exhibit more than ten times reduction compared conventional layouts. Demonstrations individual...
With the surge in perovskite research, practical features for future applications are desired to be secured, but reliability of materials and use hazardous Pb longstanding problems. Here, an air-stable Cs2 SnI6 (CSI) is prepared via diluted hydriodic acid solvent-based precursor optimization during scalable hydrothermal growth. Materials characterization performed using various elemental peak analyses crystallographic identification. The resulting CSI exhibits long-term operating stability...
This paper presents materials, device designs, and physical/electrical characteristics of a form nanotube electronics that is physically transient, in the sense all constituent elements dissolve and/or disperse upon immersion into water. Studies contact effects illustrate ability to use water soluble metals such as magnesium for source/drain contacts based field effect transistors. High mobilities on/off ratios transistors molybdenum, silicon nitride, oxide enable full swing inverters at low...
We demonstrated highly stable multilayer molybdenum disulfide (MoS2) field-effect transistors (FETs) with negligible hysteresis gap (ΔVHYS ∼ 0.15 V) via a multiple annealing scheme, followed by systematic investigation for long-term air stability time (∼50 days) of MoS2 FETs (or without) CYTOP encapsulation. The extracted lifetime the device passivation in was dramatically improved from 7 to 377 days, and even short-term bias stability, experimental threshold voltage shift, outstandingly...
Abstract This study demonstrates the efficacy of an emerging p‐type copper iodide (CuI) semiconductor in a flexible, low‐voltage resistive random‐access memory (RRAM), which can be readily integrated with metal‐oxide n‐type counterparts for complementary circuit systems. Herein, CuI RRAM devices are implemented via room‐temperature solid iodination process, exhibiting consistent On/Off ratio (≈10 4 ), excellent endurance more than ≈10 3 cycles, together long retention period (> 5 × 10 s)....
We investigate the effects of ambient atmosphere on electrical performance p-type tin monoxide (SnO) thin-film transistors (TFTs), and present effective method for passivation SnO TFTs using a SU-8 organic layer. The experimental data shows that without layer suffer from degradation under humid environments, which implies formation is necessary in stable operation devices. was successfully incorporated as TFTs. with exhibit very similar transfer characteristics those layer, show much...
Active matrix (AM) quantum-dot light-emitting diodes (QLEDs) driven by thin-film transistors (TFTs) have attracted significant attention for use in next-generation displays. Several challenges remain the realisation of AM-QLEDs, such as device design, fabrication process, and integration between QLEDs TFTs, depending on their structures configurations. Herein, efficient stable AM-QLEDs are demonstrated using conventional inverted structured (C- I-QLEDs, respectively) combined with facile...
Deterministic assembly of ultrathin metal oxide-semiconductor field-effect transistors released from the surfaces bulk wafers with (111) orientation provides a route to high quality electronics on nearly any type substrate. Device parameters and bias stability characteristics sheets plastic confirm effectiveness approach critical roles thermally grown layers silicon dioxide for gate dielectrics passivation layers. Systematic studies anisotropic etching processes used release devices...
We present a specially designed materials chemistry that provides ultrathin adhesive layers with persistent tacky surfaces in solid, nonflowable forms for use transfer printing and related approaches to micro/nanostructure assembly. The material can be photocured after assembly, yield robust highly transparent coating is also thermally electrically stable, applications electronics, optoelectronics, other areas of interest.
This paper investigates the low-frequency noise properties of multilayer WSe2 field effect transistors (FETs) in subthreshold, linear, and saturation regime. The measured power spectral density drain current (SID) shows that FET fits well to a 1/fγ law with γ ∼ 1 frequency range 10 Hz–200 Hz. From dependence SID on current, carrier mobility fluctuation is considered as dominant low mechanism from all operation regimes FET. Extracted Hooge's parameter this study within value 0.12, comparable...