А. П. Волков

ORCID: 0000-0001-8888-0273
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About
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Research Areas
  • Diamond and Carbon-based Materials Research
  • Carbon Nanotubes in Composites
  • Graphene research and applications
  • Ion-surface interactions and analysis
  • Antenna Design and Analysis
  • Advanced Antenna and Metasurface Technologies
  • Fullerene Chemistry and Applications
  • Metal and Thin Film Mechanics
  • Advanced Energy Technologies and Civil Engineering Innovations
  • Nanotechnology research and applications
  • Semiconductor materials and devices
  • RFID technology advancements
  • Laser Material Processing Techniques
  • Force Microscopy Techniques and Applications
  • Laser Design and Applications
  • Acoustic Wave Resonator Technologies
  • Antenna Design and Optimization
  • Ocular and Laser Science Research
  • Plasma Applications and Diagnostics
  • Advanced Surface Polishing Techniques
  • Plasma Diagnostics and Applications
  • Gyrotron and Vacuum Electronics Research
  • Mechanical and Optical Resonators
  • Microwave Engineering and Waveguides
  • Electromagnetic wave absorption materials

Moscow Aviation Institute
2017-2023

Voronezh Research Institute Vega
2017-2020

Technological Institute for Superhard and Novel Carbon Materials
2009-2018

Moscow State University
2009-2012

Lomonosov Moscow State University
1998-2006

We developed and investigated the vertical diamond Schottky barrier diodes on large area IIb HPHT high quality substrates. The drift CVD layers with boron content of 10 16 2 × 17 cm −3 were made. possess an integral forward current higher than A in temperature range 25–200 °C. self‐heating effect further improves diode characteristics. tested different crystal‐to‐case thermal interfaces. Diodes have less 3.5 V voltage drop for at 25 °C 1 200 on‐resistance as low 0.05 Ω (10 mΩ ). calculated...

10.1002/pssa.201532213 article EN physica status solidi (a) 2015-07-07

First, the Al/AlN/Al/Cr/diamond single crystal piezoelectric layered structure has been developed, and its properties have investigated up to 8 GHz. The peculiarities associated with influence of film on Q factor high overtones substrate pointed out. High ∼ 104 found at 6–7 GHz band.

10.1063/1.4798333 article EN Applied Physics Letters 2013-03-18

Thin film material of oriented multiwall carbon nanotubes was obtained by noncatalytical chemical vapor deposition in a glow-discharge plasma. The phase composition, surface morphology, and structural features were studied Raman electron microscopy techniques. Low-voltage field emission thin nanotube examined diode configuration. I–V curves Fowler–Nordheim coordinates linear the corresponding threshold average about 1.5 V/μm. current density up to 50 mA/cm2 at 5 site reached 107 cm−2 same...

10.1116/1.591328 article EN Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena 2000-03-01

An investigation of the growth mechanisms, electronical and structural properties, field emissions carbon films obtained by chemical vapour deposition showed that from composed spatially oriented nanotubes plate-like graphite nanocrystals exhibit non-metallic behaviour. The experimental evidence work function local reduction for film materials is reported here. A model emission site proposed mechanism nanostructured described. In agreement with here, electron in different results sp3-like...

10.1088/0022-3727/35/4/311 article EN Journal of Physics D Applied Physics 2002-02-01

10.1016/s0925-9635(99)00293-9 article EN Diamond and Related Materials 2000-04-01

Thin film cold cathodes composed of a graphite-type carbon coating on Si substrate have been fabricated and tested. Electrons from the were emitted into vacuum when average electric field exceeded 1.5 V/μm. The emission current density was more than 1 mA/cm2 site higher 107 cm2 at 4 current–voltage dependencies studied different temperatures 77 to 600 K found be typical for emission. We propose mechanism electron cathodes, based enhancement due surface morphology modification electronic...

10.1116/1.590616 article EN Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena 1999-03-01

Abstract A novel method for preparing dilutely hydrogenated fullerenes H:C 60 is presented. DFT calculations of the Raman spectra at B3LYP/3‐21G level are compared with experimental data. Under laser treatment these phases form a rich variety dimeric and polymeric structures, quite in contrast to pristine C which forms dimers polymers bonded through [2 + 2] addition, heavily do not polymerize all. Dilutely differently, forming both double structures single dimers. We have shown that dilute...

10.1002/pssb.200982261 article EN physica status solidi (b) 2009-10-09
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