A5100774199- Semiconductor materials and devices
- Silicon Nanostructures and Photoluminescence
- Advanced ceramic materials synthesis
- ZnO doping and properties
- Neuroscience and Neuropharmacology Research
- Thin-Film Transistor Technologies
- Advanced materials and composites
- Gas Sensing Nanomaterials and Sensors
- Electronic and Structural Properties of Oxides
- Ga2O3 and related materials
- Plasma Applications and Diagnostics
- Neural dynamics and brain function
- Nanowire Synthesis and Applications
- Intermetallics and Advanced Alloy Properties
- Advanced Surface Polishing Techniques
- GaN-based semiconductor devices and materials
- Plasma Diagnostics and Applications
- Photoreceptor and optogenetics research
- 3D IC and TSV technologies
- Urinary Tract Infections Management
- Surface Modification and Superhydrophobicity
- Urological Disorders and Treatments
- Copper Interconnects and Reliability
- CCD and CMOS Imaging Sensors
- Copper-based nanomaterials and applications
Ulsan National Institute of Science and Technology
2024
University of Pittsburgh
2020-2024
Yonsei University
2000-2023
Kyungpook National University
2023
Chungbuk National University
2020
University of Illinois Urbana-Champaign
2016-2017
Abstract Adolescence is associated with continued maturation of the cerebral cortex, particularly medial prefrontal cortex (mPFC). We have previously documented pruning in number neurons, dendrites, and synapses rat mPFC from preadolescence to adulthood, period pubertal onset being important. hypothesized that dopaminergic innervation this region, critical for executive functions, would also be influenced by onset. Here, we measured changes volume tyrosine hydroxylase (TH) immunoreactive...
Abstract Diverse artificial synapse structures and materials are widely proposed for neuromorphic hardware systems beyond von Neumann architecture owing to their capability mimic complex information processing tasks such as image recognition, natural language processing, learning. Nevertheless, temporal spatial randomness in the movement of ion electron particles that exist usually prevents solid‐state‐based synaptic devices from enabling reliable modulation plasticity. An aluminum...
Luminescent silicon oxides containing radiative centers were obtained by using two different techniques. Silicon rich (SRSOs) fabricated rf magnetron sputter deposition and Ge-implanted SiO2 films ion implantation following the thermal oxidation of Si. Blue violet photoluminescence observed from SRSO SiO2, respectively. However, electroluminescence (EL) spectra both exhibited red near-infrared luminescence bands. Strong EL was only under reverse bias conditions on metal-luminescent...
We investigated the characteristics of Y2O3 films grown on an oxidized Si(111) surface, using x-ray diffraction, Rutherford backscattering spectroscopy, and high-resolution transmission electron microscopy. The Si show drastically improved crystallinity, compared with film clean surfaces: channeling minimum yield (Xmin) 2.5% full width at half maximum rocking curve lower than 0.03°. improvement crystallinity was due to difference crystalline structure interface between surfaces. Crystalline...
3D NAND has a vertically stacked semiconductor structure to increase the memory density of devices. devices are based on multiply silicon nitride (Si3N4) and dioxide (SiO2) structure, it is essential high selectively etch Si3N4-to-SiO2 in fabrication process. Hot phosphoric acid (H3PO4) been typically used selective etching process selectivity can by adding SiO2 inhibitors H3PO4. In order rate Si3N4 selectivity, additives be added However, may occur by-product redeposition issue around...
Learning motor skills requires plasticity in the primary cortex (M1), including changes inhibitory circuitry. But how synaptic connections change during skill acquisition and whether this varies over development is not fully understood. This study assesses normal developmental trajectory of learning then addresses connectivity after learning. We trained mice both sexes to run on a custom accelerating rotarod at ages from postnatal day (P) 20 P120, tracking paw position quantifying time fall...
<title>Abstract</title> Propylene epoxidation is an important industrial process, but current techniques have shown adverse environmental impacts.1-3 Recently, the eco-friendly photo-electro-heterogeneous catalytic production of propylene oxide (PO) has been reported using in situ generated H2O2 and a zeolite catalyst (titanium silicalite-1, TS-1).4 However, PO rate was too low due to solar rate. In this work, we recorded high required for practical first time. TS-1 exhibits activity...
The effect of ion irradiation on the formation luminescent Si nanocrystals from silicon-rich silicon oxide (SRSO) films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (PECVD) whose content ranged 33 to 50 at. % is investigated. As-deposited SRSO contained a high density irregular-shaped nanocrystals. Irradiating these with 380 keV at room temperature dose 5.7×1015 cm−2 prior anneal 1000 °C found increase luminescence intensity due over films. Based x-ray...
We develop stable and printable precursor inks from binary metal halides; the inkjet-printed textile-based CuBrI thin-film transistors at a low temperature of 60 °C demonstrated potential for printing complementary circuits in wearable electronic textiles.
Highly selective etching of Si3N4 to SiO2 in phosphoric acid is required for the 3D NAND integration. When a single wafer tool introduced this process, process temperature needs be well controlled. Therefore, effect various additives on kinetics and reaction were investigated at higher up 200 °C study. The rates increased whereas activation energies decreased with addition either HF or NH4F. As concentration increased, further decreased. On other hand, Si-containing energy while was...
Titanium oxide films were deposited on bare glass and boiled in 50% H2SO4 for 30 min at various substrate temperatures by metal-organic chemical vapor deposition. We investigated the effects of a temperature between 300 550 °C such properties as thermal stability, deposition rate, states films. The thickness is independent treatments. rate linearly decreased with increasing temperature. Rutherford backscattering spectroscopy x-ray photoelectron results indicate that treated superior to...
As the number of stacked layers 3D NAND structure increases, memory density flash device increases [1]. In fabrication device, it is essential to selectively etch Si 3 N 4 by an etchant flowing along a narrow slit followed metal deposition. However, as /SiO 2 multi-stack selective etching becomes difficult. order increase -to-SiO selectivity, SiO inhibitor should be added H PO . Unfortunately, most inhibitors generate oxide regrowth around layer on structure. this study, mechanism occurred...
For the integration of 3D NAND, which has multiple Si 3 N 4 and SiO 2 pair-layer stack structure, highly selective etching to is required without decrease in rate . While phosphoric acid widely used as an etchant actual processes [1], chemical additives are added accelerators or inhibitors control kinetics reaction. In general, done at around 160 °C, but meantime, process temperature may increase with introduction single wafer tool. this study, we investigated effects various H PO on etch...