A5089843023- Perovskite Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Solid-state spectroscopy and crystallography
- Conducting polymers and applications
- Semiconductor Quantum Structures and Devices
- Ga2O3 and related materials
- Photorefractive and Nonlinear Optics
- Organic Electronics and Photovoltaics
- GaN-based semiconductor devices and materials
- Advanced ceramic materials synthesis
- Magnetic and transport properties of perovskites and related materials
- Strong Light-Matter Interactions
- Advancements in Solid Oxide Fuel Cells
- Aluminum Alloys Composites Properties
- Supercapacitor Materials and Fabrication
- Crystal Structures and Properties
- High-pressure geophysics and materials
King Abdullah University of Science and Technology
2019-2025
University of Science and Technology
2022
Korea University of Science and Technology
2022
Twenty-micrometer-thick single-crystal methylammonium lead triiodide (MAPbI3) perovskite (as an absorber layer) grown on a charge-selective contact using solution space-limited inverse-temperature crystal growth method yields solar cells with power conversion efficiencies reaching 21.09% and fill factors of up to 84.3%. These devices set new record for open avenue achieving high in cells.
Lead halide perovskite solar cells (PSCs) have advanced rapidly in performance over the past decade. Single-crystal PSCs based on micrometers-thick grain-boundary-free films with long charge carrier diffusion lengths and enhanced light absorption (relative to polycrystalline films) recently emerged as candidates for advancing further toward their theoretical limit. To date, preferred method grow MAPbI3 single-crystal involves solution processing at temperatures ≳120 °C, which adversely...
A mixed-cation single-crystal lead-halide perovskite absorber layer was utilized to construct 22.8%-efficient solar cells with an expanded near infrared response that approaches the ideal bandgap range (1.1–1.4 eV) for single-junction cells.
The difficulty of growing perovskite single crystals in configurations suitable for efficient photovoltaic devices has hampered their exploration as solar cell materials, despite potential to advance technology beyond polycrystalline films through markedly lower defect densities and desirable optoelectronic properties. While film absorbers can be deposited on myriad substrates, fit high-efficiency have only been demonstrated hydrophobic hole-transport layers [HTLs, e.g., poly(triaryl amine)...
ConspectusOrganic–inorganic halide perovskite photovoltaics (PVs)─only a decade-old field─have reached impressive power conversion efficiencies (PCEs) and passed industrial stability requirements (IEC 61215:2016 Damp Heat Humidity Freeze tests), solidifying their status among candidates for next generation PVs. Among the various PV technologies, all-perovskite tandem solar cells (PTSCs) are frontrunners commercialization. PTSCs unite narrow-bandgap (NBG; Eg ≈ 1.2 eV) back cell with...
Single-crystal halide perovskites exhibit photogenerated-carriers of high mobility and long lifetime, making them excellent candidates for applications demanding thick semiconductors, such as ionizing radiation detectors, nuclear batteries, concentrated photovoltaics. However, charge collection depreciates with increasing thickness; therefore, tens to hundreds volts external bias is required extract charges from a perovskite layer, leading considerable amount dark current fast degradation...
With the development of ultralow-dose (scanning) transmission electron microscopy ((S)TEM) techniques, atomic-resolution imaging highly sensitive nanomaterials has recently become possible. However, applying these techniques to study bulk materials remains challenging due lack suitable specimen preparation methods. We report that cryogenic focused ion beam (cryo-FIB) can provide a solution this challenge. successfully extracted thin specimens from metal-organic framework (MOF) crystals and...
Solution-processed organic semiconductor layers on rough surfaces tend to vary widely in thickness, significantly hindering charge extraction relevant optoelectronic devices. Herein, we report the photoactivated p-doping of hole-transporting material (HTM) enhance hole for (textured) perovskite/silicon tandem solar cells, making device performance less sensitive variation transport layer thickness. We used ionic compound 4-isopropyl-4′-methyldiphenyliodonium...
Studying the charge dynamics of perovskite materials is a crucial step to understand outstanding performance these in various fields. Herein, we utilize transient absorption mid-infrared region, where solely electron signatures conduction bands are monitored without external contributions from other dynamical species. Within measured range 4000 nm 6000 (2500-1666 cm
Understanding energy transport in semiconductors is critical for the design of electronic and optoelectronic devices. Semiconductor material properties, such as charge carrier mobility or diffusion length, are commonly measured bulk crystals determined using models that describe behavior homogeneous media, where structural boundary effects minimal. However, most emerging exhibit nano- microscale heterogeneity. Therefore, experimental techniques with high spatial resolution paired capture...
Semiconductor quantum well structures have been critical to the development of modern photonics and solid-state optoelectronics. Quantum level tunable introduced new transformative device applications afforded a myriad groundbreaking studies fundamental phenomena. However, noncolloidal, III–V compound are limited traditional semiconductor materials fabricated by stringent epitaxial growth processes. This report introduces artificial multiple wells (MQWs) built from CsPbBr3 perovskite using...
Introducing suitable electron/hole transport layers and transparent conductive (TCLs) into perovskite solar cells (PSCs) is key to enhancing the selective extraction of charge carriers reducing surface recombination losses. Here, we introduce nanoporous gallium nitride (NP GaN)/n-type GaN (n-GaN) as a dual-function cathode structure for PSCs, acting both TCL electron layer (ETL). We demonstrate that hierarchical NP provides an expanded interfacial contact area with absorber, while n-GaN...
Metal halide perovskite quantum wells (PQWs) are and dielectrically confined materials exhibiting strongly bound excitons. The exciton transition dipole moment dictates absorption strength influences interwell coupling in dipole-mediated energy transfer, a process that the performance of PQW optoelectronic devices. Here we use transient reflectance spectroscopy with circularly polarized laser pulses to investigate optical Stark effect dimensionally pure single crystals n = 1, 2, 3...
Abstract Methylammonium lead iodide (MAPbI 3 ) perovskite has garnered significant interest as a versatile material for optoelectronic applications. The temperature‐dependent photoluminescence (TDPL) and phase‐transition behaviors revealed in previous studies have become standard indicators of defects, stability, charge carrier dynamics, device performance. However, published reports abound with examples irregular phenomena that are difficult to reconcile, posing major challenges the...
Single-crystal halide perovskites exhibit photogenerated carriers of high mobility and long lifetime, making them excellent candidate materials for applications that demand thick semiconductors, such as ionizing radiation detectors, nuclear batteries, concentrated photovoltaics. However, charge collection depreciates with increasing thickness, That requiring tens to hundreds volts external bias extract charges from a perovskite layer, leading considerable amount dark current fast degradation...
Abstract Studying the charge dynamics of perovskite materials is a crucial step to understand outstanding performance these in various fields. Herein, we utilize transient absorption mid-infrared region, where solely electron signatures conduction bands are monitored without external contributions from other dynamical species. Within measured range 4000 nm 6000 (2500-1666 cm -1 ), recombination and trapping processes excited carriers could be easily monitored. Moreover, reveal that within...
Understanding energy transport in semiconductors is critical for design of electronic and optoelectronic devices. Semiconductor material properties such as charge carrier mobility or diffusion length are measured bulk crystals determined using models that describe behavior homogeneous media, where structural boundary effects minimal. However, most emerging exhibit microscale heterogeneity. Therefore, experimental techniques with high spatial resolution paired capture anisotropy domain...
Studying the charge dynamics of perovskite materials is a crucial step to understand outstanding performance these in various fields. Herein, we utilize transient absorption mid-infrared region, where solely electron signatures conduction bands are monitored without external contributions from other dynamical species. Within measured range 4000 nm 6000 (2500-1666 cm-1), recombination and trapping processes excited carriers could be easily monitored. Moreover, reveal that within this spectral...