A5007381887- Semiconductor Quantum Structures and Devices
- Quantum Dots Synthesis And Properties
- Chalcogenide Semiconductor Thin Films
- GaN-based semiconductor devices and materials
- Nanowire Synthesis and Applications
- Semiconductor Lasers and Optical Devices
- Ga2O3 and related materials
- Advanced Semiconductor Detectors and Materials
- solar cell performance optimization
- Photonic and Optical Devices
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- ZnO doping and properties
- Metamaterials and Metasurfaces Applications
- Xenotransplantation and immune response
- Building Energy and Comfort Optimization
- Thin-Film Transistor Technologies
- Perovskite Materials and Applications
- Plasmonic and Surface Plasmon Research
- Optical Network Technologies
- Quantum and electron transport phenomena
- Photonic Crystals and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- 2D Materials and Applications
- Advanced Antenna and Metasurface Technologies
Jeonbuk National University
2019-2025
National Renewable Energy Laboratory
2016-2024
Inje University Sanggye Paik Hospital
2024
Korea Advanced Nano Fab Center
2018-2019
Government of the Republic of Korea
2019
Jeonju University
2019
Gwangju Institute of Science and Technology
2002-2015
Hanyang University
2012
Gyeongsang National University
2012
Concordia University
2003-2011
This paper presents an experimental study for the development of convective heat transfer correlations open loop air-based building-integrated photovoltaic/thermal (BIPV/T) system. The BIPV/T system absorbs solar energy on top surface, which includes photovoltaic panels and generates electricity while also heating air drawn by a variable speed fan through channel formed roof surface with modules insulated attic layer. has length/hydraulic diameter ratio 38, is representative 30–45 deg tilt...
The increasing demand for visual data processing reveals the limitations of traditional electronic systems in speed, energy efficiency, and adaptability. While optical computing offers a promising alternative, current often lack flexibility required multispectral adaptive tasks. Here, we present an efficient way highly adaptive, image filtering based on active Tamm plasmon resonators. We realize precise control over resonant wavelengths, enabling selective spectral targeting with...
Monolithic green-sensitive photodetectors (PDs) showed superior green sensitivity over single heterojunction-based PDs. The spectral-filtering effect significantly enhanced sensitivity, resulting in a 98-fold improvement.
Correction for ‘Monolithic green-sensitive photodetectors enabled by a ZnSnN 2 /GaN nanorods/silicon double heterojunction’ Jeong Hyeon Kim et al. , Inorg. Chem. Front. 2025, https://doi.org/10.1039/d4qi02418d.
Introducing suitable electron/hole transport layers and transparent conductive (TCLs) into perovskite solar cells (PSCs) is key to enhancing the selective extraction of charge carriers reducing surface recombination losses. Here, we introduce nanoporous gallium nitride (NP GaN)/n-type GaN (n-GaN) as a dual-function cathode structure for PSCs, acting both TCL electron layer (ETL). We demonstrate that hierarchical NP provides an expanded interfacial contact area with absorber, while n-GaN...
This article presents a computational procedure for multicriteria optimal conceptual design of the structural layout buildings subject to given specifications and requirements. Two objective criteria are considered evaluating alternative designs. The first concerns minimizing building project cost through minimization function defining combined costs system land site. second optimizing flexibility floor space usage, which is qualitative criterion that quantitative form an exponential relates...
In this paper, we demonstrate an ultraviolet photodetector (UV-PD) that uses coalesced gallium nitride (GaN) nanorods (NRs) on a graphene/Si (111) substrate grown by plasma-assisted molecular beam epitaxy. We report highly sensitive, self-powered, and hybrid GaN NR/graphene/Si PD with relatively large 100 mm2 active area, high responsivity of 17.4 A/W, specific detectivity 1.23 × 1013 Jones, fast response speeds 13.2/13.7 μs (20 kHz) under UV light 355 nm at zero bias voltage. The results...
We propose a tunable dual-wavelength absorption (TDWA) switch based on an asymmetric guided mode resonance (AGMR) structure. A TDWA consists of graphene layer and AGMR structure sandwiched by cap slab layers buffer/silicon substrate. The adds smaller grating unit cell next to larger one, exciting second close but distinct from the first resonance. For switching, between absorptive or reflective with each on-/off-state, chemical potential is tuned 0.0 eV 0.6 eV. mode, two peaks ≥ 96.2% are...
This paper considers an idealised solar sail consisting of a uniform, elastic, isotropic square membrane that is prestressed by two pairs equal and opposite forces applied at the corners. Two wrinkling regimes are identified. The first regime occurs for symmetric moderately asymmetric loading; it characterised small, radial corner wrinkles. second strongly loading single, large diagonal wrinkle, plus small An analytical method predicting wrinkle wavelengths out-of-plane displacements, as...
Molecular beam epitaxy offers an exciting avenue for investigating the behavior of topological semimetal Cd3As2, by providing routes doping, alloying, strain engineering, and heterostructure formation. To date, however, minimal exploration has been devoted to impact defects that are incorporated into epilayers due contraints imposed substrate narrow growth window. Here, we use a combination lattice-matched ZnxCd1-xTe buffer layers, miscut substrates broadband illumination study how...
The phosphorus-doped ZnO nanorods were prepared using hydrothermal process, whose structural modifications as a function of doping concentration investigated X-ray diffraction. dopant concentration-dependent enhancement in length and diameter the had established phosphorus nanorods. gradual transformation type conductivity observed from variation carrier Hall coefficient further confirmed doping. modification due to was understood on basis amphoteric nature phosphorus. absence showed...
Abstract When implementing optoelectronic devices through the stacking of heterogeneous materials, considering bandgap offset is crucial for achieving efficient carrier dynamics. In this study, characteristics are investigated when n ‐type gallium nitride nanowires ( ‐GaN NWs) used as electron transport layers in methylammonium lead iodide (MAPbI 3 )‐based devices. NWs grown on indium‐tin‐oxide (ITO)‐coated glass via plasma‐assisted molecular beam epitaxy (PA‐MBE) process to form “GaN...
We report the enhancement of minority carrier lifetime GaInP with a lateral composition modulated (LCM) structure grown using molecular beam epitaxy (MBE). The structural and optical properties samples are studied by transmission electron microscopy photoluminescence, which reveal formation vertically aligned bright dark slabs corresponding to Ga-rich In-rich regions, respectively, good crystal quality. With decrease V/III ratio during LCM growth, it is seen that band gap reduced, while PL...
Integrating different semiconductor materials into an epitaxial device structure offers additional degrees of freedom to select for optimal material properties in each layer. However, interfaces between with valences (i.e. III-V, II-VI and IV semiconductors) can be difficult form high quality. Using ZnSe/GaAs as a model system, we explore the use ultraviolet (UV) illumination during heterovalent interface growth by molecular beam epitaxy way modify properties. We find that UV alters mixture...
Abstract Perfect absorption at a resonance wavelength and extremely low the range of off-resonance in one-port optical cavity is required for refractive index (RI) sensing with high signal contrast. Here, we propose analyze an absorption-enhanced Fabry–Perot (MAFP) based on critical coupling condition near-infrared range. For cavity, thick bottom Au used as mirror absorber. To achieve condition, top dielectric metasurface employed tailored to balance radiation rates, theoretically analyzed...
Lateral composition modulated (LCM) GaInP structures were grown on (001) GaAs substrate by molecular beam epitaxy with different V/III flux ratios. Band gap of LCM could be tuned from 1.93 eV to 1.83 eV decreasing ratio while maintaining the same photoluminescence intensity, enhanced light absorption, and widened absorption spectrum. It is shown that for band tuning structures, adjustment a more viable method compared growth temperature adjustment.