A5030750399- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Neuroscience and Neural Engineering
- Advancements in Semiconductor Devices and Circuit Design
- Machine Learning and ELM
- Advancements in Photolithography Techniques
- Photoreceptor and optogenetics research
- Quantum-Dot Cellular Automata
- Advanced Surface Polishing Techniques
- Electronic and Structural Properties of Oxides
- Quantum and electron transport phenomena
- Integrated Circuits and Semiconductor Failure Analysis
- 3D IC and TSV technologies
Université de Sherbrooke
2021-2024
Laboratoire Nanotechnologies et Nanosystèmes
2021-2024
Brain-inspired computing and neuromorphic hardware are promising approaches that offer great potential to overcome limitations faced by current paradigms based on traditional von-Neumann architecture. In this regard, interest in developing memristor crossbar arrays has increased due their ability natively perform in-memory fundamental synaptic operations required for neural network implementation. For optimal efficiency, crossbar-based circuits need be compatible with fabrication processes...
In recent years, resistive memories have emerged as a pivotal advancement in the realm of electronics, offering numerous advantages terms energy efficiency, scalability, and non-volatility [1]. Characterized by their unique switching behavior, these are well-suited for variety applications, ranging from high-density data storage to neuromorphic computing [2]. Their potential is further enhanced compatibility with advanced semiconductor processes, enabling seamless integration into modern...
Exploration of memristors' behavior at cryogenic temperatures has become crucial due to the growing interest in quantum computing and electronics. In this context, our study focuses on characterization (4.2 K) TiO2−x-based memristors fabricated with a CMOS-compatible etch-back process. We demonstrate so-called reforming (CR) technique performed 4.2 K overcome well-known metal-insulator transition (MIT), which limits analog low temperatures. This process was found be reproducible led durable...
Current quantum systems based on spin qubits are controlled by classical electronics located outside the cryostat. This approach creates a major wiring bottleneck, which is one of main roadblocks toward scalable computers. Thus, we propose memristor-based programmable dc source that can perform biasing dots (QDs) inside novel cryogenic would enable to control applied voltage electrostatic gates programming resistance memristors, thus storing in latter appropriate conditions form QDs. In this...
Cryogenic memristor-based DC sources offer a promising avenue for in situ biasing of quantum dot arrays. In this study, we present experimental results and discuss the scaling potential such sources. We first demonstrate operation commercial discrete operational amplifier down to 1.2K which is used on source prototype. Then, tunability validated by performing several 250mV-DC sweeps with resolution 10mV at room temperature 1.2K. Additionally, prototype exhibits limited output drift...
Cryogenic memristor-based DC sources offer a promising avenue for in situ biasing of quantum dot arrays. In this study, we present experimental results and discuss the scaling potential such sources. We first demonstrate operation commercial discrete operational amplifier down to which is used on source prototype. Then, tunability validated by performing several -DC sweeps with resolution at room temperature . Additionally, prototype exhibits limited output drift This showcases biasing....
In this paper, we present a novel method to perform grayscale electron-beam lithography on multilayer stacks where the pattern transfer is done in single plasma etching step. Due differences material etch rates stack, shape of resist after development vs stack significantly different. To be able reach desired final dose defined by an calibration curve that describes relationship between and remaining materials thickness etching. With method, resistive memory crossbar array fabricated with...
We report the fabrication of Hf
The exploration of memristors' behavior at cryogenic temperatures has become crucial due to the growing interest in quantum computing and electronics. In this context, our study focuses on characterization (4.2 K) TiO$_\textrm{2-x}$-based memristors fabricated with a CMOS-compatible etch-back process. We demonstrate so-called reforming (CR) technique performed 4.2 K overcome well-known metal-insulator transition (MIT) which limits analog low temperatures. This process was found be...
Passive resistive random access memory (ReRAM) crossbar arrays, a promising emerging technology used for analog matrix-vector multiplications, are far superior to their active (1T1R) counterparts in terms of the integration density. However, current transfers neural network weights into conductance state devices architecture accompanied by significant losses precision due hardware variabilities such as sneak path currents, biasing scheme effects and tuning imprecision. In this work, training...
Current quantum systems based on spin qubits are controlled by classical electronics located outside the cryostat at room temperature. This approach creates a major wiring bottleneck, which is one of main roadblocks toward truly scalable computers. Thus, we propose memristor-based programmable DC source that could be used to perform biasing dots inside (i.e. in-situ). novel cryogenic would enable control applied voltage electrostatic gates programming resistance memristors, thus storing in...
In this paper, we show an alignment strategy based on a hybrid using cross correlation and line-scan to address the challenge for CMOS integrated circuit postprocessing electron-beam lithography. Due design rules imposed by foundries at 130 nm node below, classical is not possible, marker shapes are limited. The shape of essential cross-correlation alignment. By measuring accurately offset between two lithography steps with different compatible rules, tested influence in performance We...
Brain-inspired computing and neuromorphic hardware are promising approaches that offer great potential to overcome limitations faced by current paradigms based on traditional von-Neumann architecture. In this regard, interest in developing memristor crossbar arrays has increased due their ability natively perform in-memory fundamental synaptic operations required for neural network implementation. For optimal efficiency, crossbar-based circuits need be compatible with fabrication processes...