A5053969153- ZnO doping and properties
- Gas Sensing Nanomaterials and Sensors
- Ga2O3 and related materials
- Copper-based nanomaterials and applications
- GaN-based semiconductor devices and materials
- Transition Metal Oxide Nanomaterials
- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Semiconductor Lasers and Optical Devices
- Chalcogenide Semiconductor Thin Films
- Semiconductor materials and interfaces
- Photonic and Optical Devices
- Surface Roughness and Optical Measurements
- Water Quality Monitoring and Analysis
- Spectroscopy and Laser Applications
- Advanced Memory and Neural Computing
- Infrared Target Detection Methodologies
- Metal and Thin Film Mechanics
- Air Quality Monitoring and Forecasting
- Conducting polymers and applications
- Diamond and Carbon-based Materials Research
- Quantum Dots Synthesis And Properties
- Quantum and electron transport phenomena
Sivas Cumhuriyet Üniversitesi
2009-2024
Nanophoton (Brazil)
2020
Cukurova University
2006-2008
A ZnO:Al (10%) thin film was prepared on GaAs(100) substrate by using a pulsed filtered cathodic vacuum arc deposition (PFCVAD) system. The thermally annealed for 1 h at 2 different temperatures in air. structure investigated as function of annealing temperature X-ray diffraction (XRD). 500 °C PFCVAD method resulted an amorphous film. However, after 600 °C, it showed (100) and (002) peaks around 32° 34°, respectively. chemical state (AZO) GaAs photoelectron spectroscopy (XPS). dependence...
In this study, ZnO films were prepared on p-Si substrates using the pulsed filtered cathodic vacuum arc deposition (PFCVAD) method. We report effect of annealing temperature structural and optical properties. The crystallographic structure size crystallites in studied by means X-ray diffraction. had a weak peak (100) orientation at 2theta = sim 32°. diffraction analysis as-deposited film annealed 850 °C showed strong (002) centered 34.1° 34.5°, respectively. (004) was seen for °C. higher...
In the present work, Gallium Oxide (Ga2O3) were deposited as thin films by radio frequency (RF) magnetron sputtering at 300 °C substrate temperature on glass using Ga2O3 target with 99.99% purity. The crystalline structure, morphology, optical properties of determined X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV–Visible Spectrometry, respectively. Experimental results show that annealing has an important role in changes observed characterization films. All produced...
Abstract We have calculated the plasmon dispersion relations in a doped double quantum well with and without exchange–correlation potential added to effective of system. The calculations were done for high low doping densities by solving Schrödinger Poisson equations self‐consistently. Our numerical results show that is quite important at donor impurities dispersions large wave vectors. On other hand, ratio subband populations n i density N D more affected densities. (© 2007 WILEY‐VCH Verlag...
In this study, GeOx films were grown on silicon substrates using the Radio Frequency (RF) Magnetron Sputtering method at different oxygen flow rates and annealing temperatures. The produced a substrate temperature of 250°C working pressure 13 mTorr. Subsequently, annealed temperatures 300°C, 500°C, 600°C, 700°C, 900°C, 1000°C. Total diffuse reflection measurements performed to investigate optical properties films. Energy band gaps determined they calculated Kubelka-Munk method. It was...
In x Ga 1-x As layers on undoped InP (100) substrates were grown with Aixtron 200-4 RF/S horizontal Metal Organic Chemical Vapour Deposition (MOCVD) reactor. All the epilayers have been different indium compositions. Thickness of samples measured via Scanning Electron Microscopy (SEM). Indium concentrations defined by High Resolution X-ray Diffraction (HRXRD) and optical measurements done spectroscopic ellipsometry in order to obtain refractive index (n) thickness samples. In-situ...
30-pair AlAs/GaAs distributed Bragg reflector (DBR), which has 1030 nm center reflectivity, is studied extensively by means of High Resolution X-ray Diffraction (HR-XRD) and reflectivity measurements. Theta/2-Theta measurements dynamical simulations have been done for (002), (004) (006) planes to determine strain thickness AlAs GaAs layers in the DBR stack. Reciprocal space mappings (RSMs) are measured same also (224) plane find out tilt relaxation Relaxation not observed it confirmed with...