A5052612957- GaN-based semiconductor devices and materials
- Semiconductor Quantum Structures and Devices
- ZnO doping and properties
- Ga2O3 and related materials
- Semiconductor materials and devices
- Acoustic Wave Resonator Technologies
- Advanced Semiconductor Detectors and Materials
- Thin-Film Transistor Technologies
- Spectroscopy and Laser Applications
- Advancements in Semiconductor Devices and Circuit Design
- Metal and Thin Film Mechanics
- Photocathodes and Microchannel Plates
- Silicon Nanostructures and Photoluminescence
- Nanowire Synthesis and Applications
- Atmospheric Ozone and Climate
- Photonic and Optical Devices
- Gas Sensing Nanomaterials and Sensors
- Transition Metal Oxide Nanomaterials
- Spectroscopy and Quantum Chemical Studies
- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
- Water Quality Monitoring and Analysis
- Optical Coatings and Gratings
- Surface Roughness and Optical Measurements
- Copper-based nanomaterials and applications
Sivas Cumhuriyet Üniversitesi
2014-2024
Virginia Commonwealth University
2017
The aim of the study is to understand effects two stages HT-GaN growth with different V/III ratios on optical, chemical and structural characteristics layer. In addition, two-stage transport properties has been presented through fabricated Schottky diodes. As ratio in 1st stage layer varied, it observed that recovery reflectance faster higher ratios, while no significant effect by changing 2nd growth. caused decrease screw dislocation densities obtained from high-resolution x-ray diffraction...
In this work, the effect of Si (111) substrate surface cleaning by RCA (Radio Corporation America) method on growth rate and crystalline quality epitaxially grown AlN thin films MOVPE (Metal Organic Vapor Phase Epitaxy) technique is investigated. situ reflectance system high resolution X-ray diffraction (HRXRD) are used for analysis crystal epitaxial layers, respectively. Also, The Raman measurement done to show procedure position peaks that occurred in spectra. results have shown removes...
We present growth and characterization studies of highly n-doped InGaAs epilayers on InP substrate by metal organic vapor phase epitaxy to use as an n-contact layer in quantum cascade laser applications. have introduced quasi two-dimensional electrons between 10 s pulsed improve both carrier concentration mobility structure applying doping methods towards increasing the Si dopant InGaAs. Additionally, V/III ratio optimization under fixed group III source flow has been investigated with this...
We studied the effect of substrate temperature, in range from 450 °C to 500 °C, on required Zn (Be + Mg) flux ratio for plasma-assisted molecular beam epitaxy growth O-polar BexMgyZn1-x-yO (0001)-GaN/sapphire templates. Achievement single-crystalline with improved optical and structural qualities relatively high temperatures, which necessitated be increased 3.9 at 8.3 °C. This resulted a reduction Mg incorporation 25% 15% fixed Be content ∼3%. With increasing ratio, 15 K photoluminescence...