Molecules with weak ground-state absorption that form strongly absorbing excited states can be used in optical limiters, which protect sensors or human eyes from damage. Phthalocyanine complexes bearing heavy atoms paramagnetic groups solvents containing show limiting enhanced by triplet-state absorption. A nonhomogeneous distribution of indium tetra( tert -butyl)phthalocyanine chloride along the beam path substantially enhances excited-state absorption, yielding an limiter a linear...

CMOS platforms operating at the telecommunications wavelength either reside within highly dissipative two-photon regime in silicon-based optical devices, or possess small nonlinearities. Bandgap engineering of non-stoichiometric silicon nitride using state-of-the-art fabrication techniques has led to our development USRN (ultra-silicon-rich nitride) form Si7N3, that possesses a high Kerr nonlinearity (2.8 × 10−13 cm2 W−1), an order magnitude larger than stoichiometric nitride. Here we...

CMOS‐compatible nonlinear optics platforms with negligible losses and high nonlinearity are of great merit. Silicon, silicon nitride Hydex glass have made significant headway in optical signal processing, though none these possesses the highly sought after combination losses. In this manuscript, we present a platform based on silicon‐rich nitride, deposited at low temperature 250°C compatible back‐end CMOS processing. The is designed engineered composition to bandgap 2.05 eV, such that...

CMOS platforms with a high nonlinear figure of merit are highly sought after for photonic quantum efficiencies, enabling functionalities not possible from purely linear effects and ease integration electronics. Silicon-based have been prolific amongst the suite advanced optical signal processes demonstrated to date. These include crystalline silicon, amorphous Hydex glass, stoichiometric silicon nitride. Residing between nitride in composition, silicon-rich films various formulations emerged...

The formation of optical solitons arises from the simultaneous presence dispersive and nonlinear properties within a propagation medium. Chip-scale devices that support harness high field confinement flexibility in dispersion engineering for significantly smaller footprints lower operating powers compared to fiber-based equivalents. High-order evolve periodically as they propagate experience temporal narrowing at start each soliton period. This phenomenon allows strong compression pulses be...

Silicon-rich nitride films are developed and explored using an inductively coupled plasma chemical vapor deposition system at low temperature of 250 °C with ammonia-free gas chemistry. The refractive index the silicon-rich can increase from 2.2 to 3.08 1550 nm wavelength while retaining a near-zero extinction coefficient when amount silane increases. Energy dispersive spectrum analysis gives silicon nitrogen ratio in films. Atomic force microscopy shows very smooth surface, surface roughness...

We demonstrate NDIR CO2 gas sensing using CMOS compatible MEMS ScAlN-based pyroelectric detectors. The detectors are fabricated 8-inch wafer level technology with 12 % Sc-doped AlN deposited at a temperature of ∼200 °C. Together blackbody thermal emitter, 10 cm long enclosed channel only inlet and outlet holes connected to tubings, testing 2 different reference gases (N2 synthetic air), measurements show voltage signal drop due absorption the 4.26 μm wavelength concentrations ranging from...

Abstract Higher‐order soliton dynamics, specifically compression and fission, underpin crucial applications in ultrafast optics, communications, signal processing. Bragg solitons exploit the strong dispersive properties of periodic media near photonic band edge. This enables dynamics to occur very short propagation distances, opening avenues harness fission integrated platforms. However, implementation complementary metal‐oxide semiconductor (CMOS)‐compatible platforms has been hindered by...

Highly sensitive, selective, and compact hydrogen (H2) sensors for safety process monitoring are needed due to the growing adoption of H2 as a clean energy carrier. Current resonant frequency-based face critical challenge in simultaneously achieving high sensitivity, low operating frequency, miniaturization while maintaining figure merit (FOM). This study addresses these challenges by introducing novel piezoelectric micro diagram (PMD) sensor that achieves an unprecedented FOM exceeding 104....

Patterned gallium nitride nanowires have been grown on n-Si(100) substrates by pulsed laser ablation. The are patterned using a physical mask, resulting in regions of nanowire growth different density. These single-crystalline with hexagonal wurzite structures. electrical transport measurements individual GaN show near-linear current–voltage characteristics. estimated electron densities these range from 1.8–6.8 × 1018 cm−3. field emission characteristics turn-on 8.4 V µm−1 to achieve current...

Abstract The dispersive nonlinear refractive index of ultra-silicon-rich nitride, and its two-photon three-photon absorption coefficients are measured in the wavelength range between 0.8 µm–1.6 µm, covering O- to L – telecommunications bands. In range, compared theoretically calculated values with a simple parabolic band structure. Two-photon is observed exist only at wavelengths lower than 1.2 μm. criterion for all-optical switching through material investigated it shown that nitride good...

Abstract CMOS-compatible nonlinear optics platforms with high Kerr nonlinearity facilitate the generation of broadband spectra based on self-phase modulation. Our ultra – silicon rich nitride (USRN) platform is designed to have a large refractive index and low losses at 1.55 μm for facilitation wideband spectral broadening. We investigate ultrafast characteristics USRN waveguides 1-mm-length, which parameters (γ ∼ 550 W −1 /m) anomalous dispersion wavelength input light. add-drop ring...

Infrared gas sensors have been proven promising for broad applications in Internet of Things and Industrial Things. However, the lack miniaturized light sources with good compatibility tunable spectral features hinders their widespread utilization. Herein, a strategy is proposed to increase radiated power from microelectromechanical-based thermal emitters by coating graphene oxide (GO). The radiation can be substantially enhanced, which partially stems high emissivity GO demonstrated...

Abstract Optical pulses are fundamentally defined by their temporal and spectral properties. The ability to control pulse properties allows practitioners efficiently leverage them for advanced metrology, high speed optical communications attosecond science. Here, we report 11× compression of 5.8 ps 0.55 using a low power 13.3 W. result is accompanied significant increase in the peak 9.4×. These results represent strongest demonstrated date on complementary metal–oxide–semiconductor (CMOS)...

Spectral tunability methods used in optical communications and signal processing leveraging optical, electrical, acousto-optic effects typically involve spectral truncation that results energy loss. Here we demonstrate temperature tunable broadening using a nonlinear ultra-silicon-rich nitride device consisting of 3-mm-long cladding-modulated Bragg grating 7-mm-long channel waveguide. By operating at frequencies close to the band edge, an apodized grating, access strong grating-induced...

Topological boundary states are well localized eigenstates at the between two different bulk topologies. As long as topology is preserved, topological mode will endure. Here, we report nonlinear parametric amplification of light in a dimerized coupled waveguide system based on Su-Schrieffer-Heeger model with domain wall. The good linear transmission properties arising from strong localization to demonstrated through successful high-speed 30 Gb/s non-return-to-zero and 56 pulse amplitude...

Pure-quartic solitons have gained significant attention recently due to their ability achieve higher energy than classical for short pulse durations, leveraging the interaction between self-phase modulation and anomalous fourth-order dispersion. However, challenges in generating required dispersion profile scarcity of sufficiently low-loss devices with high nonlinearity negligible nonlinear loss restricted experimental progress. In this paper, we report a class pure-quartic Bragg that...

Nonlinear integrated optics leveraging platforms with high nonlinear figure of merit offer energy efficient optical signal processing capabilities. Over the last five years, CMOS-compatible ultra-silico-rich nitride (USRN) has emerged as a promising platform on which to implement various functions. Bandgap engineered maximize Kerr nonlinearity while maintaining two-photon absorption free behavior at telecommunications wavelengths, USRN possesses refractive index that is 100× larger than in...

Abstract Supercontinuum generation is demonstrated in a 3-mm-long ultra-silicon-rich nitride (USRN) waveguide by launching 500 fs pulses centered at 1555 nm with pulse energy of 17 pJ. The generated supercontinuum experimentally characterized to possess high spectral coherence, an average | g 12 exceeding 0.90 across the wavelength range coherence measurement (1260 1700 nm). Numerical simulations further indicate over full spectrum. measured agrees well theoretical based on generalized...

NDIR CO2 gas sensors using a 10-cm-long channel and CMOS-compatible 12% doped ScAlN pyroelectric detector have previously demonstrated detection limits down to 25 ppm fast response time of ∼2 s. Here, we increase the doping concentration Sc 20% in our ScAlN-based miniaturize by ∼65× volume with length reduction from 10 4 cm diameter 5 1 mm. The detectors are fabricated over 8-in. wafers, allowing cost leveraging on semiconductor manufacturing. Cross-sectional TEM images show presence...

We have demonstrated a heterogeneously integrated III-V-on-Silicon laser based on an ultra-large-angle super-compact grating (SCG). The SCG enables single-wavelength operation due to its high-spectral-resolution aberration-free design, enabling wavelength division multiplexing (WDM) applications in Electronic-Photonic Integrated Circuits (EPICs). Si/III-V is realized by fabricating the silicon-on-insulator (SOI) substrate. Optical gain provided electrically pumped heterogeneous III-V...

A new heterogeneous Si/III-V integration and the optical vertical interconnect access to silicon-on-insulator (SOI) nanophotonic layer is proposed designed. The III-V semiconductor layers are directly bonded SOI etched form waveguide (after removal of substrate), which has no air-trench or channel underneath as prior art. design example shows a 1.5 μm wide confinement factor ~24% in 100 nm-thick active region for effective light amplification/absorption. realized through tapering both same...

In this paper, we fabricate and demonstrate a functional complementary metal-oxide-semiconductor (CMOS) compatible pyroelectric uncooled thermal detector using 12% doped Scandium Aluminum Nitride (ScAlN) as the sensing layer. The ScAlN material is deposited at temperature of ∼200 °C over an 8-in. wafer area. This has shown, in general, improved performance compared to AlN, with specific detectivity high ∼ 6.08×107 cm Hz/W noise equivalent power low 8.85×10−10 W/Hz. results show ScAlN-based...