A5013913867- Silicon Nanostructures and Photoluminescence
- Thin-Film Transistor Technologies
- Silicon and Solar Cell Technologies
- Nanowire Synthesis and Applications
- Perovskite Materials and Applications
- Semiconductor materials and interfaces
- Optical Coatings and Gratings
- Fluid Dynamics and Heat Transfer
- Electrohydrodynamics and Fluid Dynamics
- Nanomaterials and Printing Technologies
- Chalcogenide Semiconductor Thin Films
- Advanced Surface Polishing Techniques
- Seismic Waves and Analysis
- Photovoltaic System Optimization Techniques
- Photonic Crystals and Applications
- Ionosphere and magnetosphere dynamics
- Earthquake Detection and Analysis
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- ZnO doping and properties
- Meteorological Phenomena and Simulations
- Thermography and Photoacoustic Techniques
- Quantum Dots Synthesis And Properties
- Gas Sensing Nanomaterials and Sensors
- solar cell performance optimization
National Polytechnic University of Armenia
2018-2025
Nitrogen dioxide (NO 2 ) is a serious environmental pollutant and can cause negative consequences on both human health vegetation growth. Herein, the possibility promise of using resistive sensor based pristine black silicon (BSi) to detect NO at room temperature are investigated. BSi prepared plasma‐based reactive ion etching. Scanning electron microscope (SEM) studies show that consists vertically standing nanoneedles has large surface area, which facilitates gas adsorption. The...
Black silicon (b‐Si) has many attractive properties and is currently being adopted in various fields of semiconductor technology. It shown here that b‐Si during thermal activation may serve as an external gettering layer to remove metallic impurities associated defects from bulk Si. The efficiency by estimated according the results studying resistivity, defect density, interstitial iron concentration, effective minority carrier lifetime on gettered test ungettered reference Si samples....
To improve the absorption of light in two‐junction tandem perovskite–silicon solar cells, antireflective textures are often created on front surface form micronsized pyramids using wet‐chemical etching. It is known that single‐junction silicon cells with nanotextured black (BS) formed by dry‐etching techniques more efficient than pyramidal microtextures. Herein, experimental evidence enhanced efficiency structures BS between perovskite layer and substrate for first time demonstrated....
In this work, we have investigated the photocurrent and spectral sensitivity of silicon/SrTiO3:xNb/perovskite structures. The sol–gel method carried out deposition undoped SrTiO3 layers as well niobium-doped (SrTiO3:Nb) at atomic concentrations 3 6% Nb. perovskite layer, CH3NH3PbI3−xClx, has been deposited by vacuum co-evaporation technique. characterized scanning electron microscopy X-ray diffraction measurements. volt–ampere characteristics fabricated samples measured under illumination...
Black silicon (BS) layers coated with passivation films are widely used as antireflective frontal surfaces for solar cells. The most common BS fabrication techniques reactive ion etching (RIE), metal‐assisted chemical etching, and laser‐induced processing. Herein, the structural optical properties, well minority carrier lifetime, of compared without atomic layer deposited HfO 2 produced by above formation methods. antireflection behavior samples is discussed based on light trapping effect...
A study on the formation of black silicon (b-Si) antireflection layers crystalline Si wafers using SF 6 /O 2 gas mixture in a reactive ion etching method is presented. The process low-temperature, fast and does not depend crystallographic orientation wafer. b-Si have demonstrated average reflectance values 4% 5% for monoand polycrystalline respectively, feature that suitable fabrication high efficiency solar cells. Passivation by different thin films can significantly reduce needle-like...
The wettability of black silicon (BSi) layers fabricated by reactive ion etching (RIE), metal‐assisted chemical (MACE), and laser‐induced (LIE) techniques is studied. contact angles wetting on the samples with deionized water methylammonium iodide‐based perovskite solutions are determined. It found that element composition enlargement area factor BSi have a significant effect their wettability. When tested water, RIE MACE exhibit hydrophobic properties, while LIE layer demonstrates...
Vacuum-Evaporated Mixed-Halide Perovskite Layers In article number 2200482, Ashok Vaseashta and co-workers investigate the structural optical properties of mixed-halide perovskite layers deposited on black silicon by sequential co evaporation methods. The is formed using plasma reactive ion etching. authors demonstrate a significant reduction in reflection layers. This achieved without compromising quality layer as photoabsorber. results confirm promise for perovskitesilicon tandem junction...
The influence of the surface and interfaces semiconductor-metal Al/n<sup>+</sup>Si-nSi/Al Ag/n<sup>+</sup>Si-nSi/Ag structures with different aluminum silver contact coating layers on level behavior low frequency current noise spectra was experimentally investigated. It is shown that strongly depends material form layers. At room temperature, at 10 Hz, for equal to ~ 10<sup>-15</sup> A<sup>2</sup>/Hz, 10<sup>-17</sup>-10<sup>-18</sup> A<sup>2</sup>/Hz. seems possible interface conditions...
The characteristics of an oppositely placed double potential barrier photodetector structure were investigated under longitudinal illumination. functional abilities the silicon n+-p-n+ studied choice impurity concentration in n+- and p- regions provided difference heights barriers near-surface, rear, directed their conjoining high-resistance p-base. widths depletion these varied with a step change bias voltage. redistribution fraction absorption electromagnetic waves between contribution to...