A5000185546- ZnO doping and properties
- Copper-based nanomaterials and applications
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Gas Sensing Nanomaterials and Sensors
- Advanced Photocatalysis Techniques
- Transition Metal Oxide Nanomaterials
- 2D Materials and Applications
- Ga2O3 and related materials
- MXene and MAX Phase Materials
- Perovskite Materials and Applications
- Semiconductor materials and interfaces
- Thin-Film Transistor Technologies
- Heusler alloys: electronic and magnetic properties
- GaN-based semiconductor devices and materials
- TiO2 Photocatalysis and Solar Cells
- Iron-based superconductors research
- Advanced Semiconductor Detectors and Materials
- Nonlinear Optical Materials Research
- Electronic and Structural Properties of Oxides
- Magnetic and transport properties of perovskites and related materials
- Topological Materials and Phenomena
- Semiconductor materials and devices
- Nanowire Synthesis and Applications
- Inorganic Fluorides and Related Compounds
Indian Institute of Technology Indore
2025
Indian Institute of Technology Dhanbad
2015-2024
Stanley Medical College
2024
Indian Institute of Technology Delhi
2013-2018
University of Alabama
2016
Research Center for Applied Science, Academia Sinica
2009-2013
Inter-University Accelerator Centre
2013
National Yang Ming Chiao Tung University
2012
Academia Sinica
2012
Anna University, Chennai
2004-2009
We propose Mg doping in zinc oxide (ZnO) films for realizing wider optical bandgap highly c-axis oriented Zn1−xMgxO (0 ≤ x 0.3) thin films. A remarkable enhancement of 25% the by 30% was achieved. The tuned between 3.25 eV and 4.06 (Zn0.7Mg0.3O), which further confirmed density functional theory based wien2k simulation employing a combined generalized gradient approximation with scissor corrections. change stress crystallite size these were found to be causes observed blueshift bandgap.
Construction of a van der Waals (vdW) heterojunction is promising approach with effective separation charge carriers for intensified solar-to-hydrogen (STH) conversion efficiency. A trilayer MoS2/ZnO/WS2 two different configurations constructed and their electronic photocatalytic properties are investigated in detail. The exhibited type-II band alignment, where the ZnO monolayer placed to valence maxima (VBM) position MoS2 contributed at conduction minima (CBM) heterojunction. In addition,...
Kesterite CFTS, CCTS and CNTS thin films have good electrocatalytic behavior improved photoelectrochemical responses with respect to a ZnO nanorod counter electrode.
Devices with ITO/ZnO/ZnS/CFTS/Au, ITO/ZnO/ZnS/CCTS/Au and ITO/ZnO/ZnS/CNTS/Au architectures exhibited PCE values of 2.73, 3.23 2.71% displayed good electrocatalytic behaviors.
The MoS2 nanostructures have been synthesized with the variation of Mo/S molar ratios 1:2, 1:3, 1:4, 1:5, and 1:6 using a simple hydrothermal method. (002) peak at 2θ ∼ 14° in X-ray diffraction (XRD) pattern confirms hexagonal phase nanostructures, which agrees well Raman high-resolution transmission electron microscopy study. Furthermore, field emission scanning analysis reveals that 1:5 exhibits nanoflower-like structure, significantly enhancing photocatalytic activity. methylene blue (MB)...
Highly transparent and self-cleaning ZnO nanorods (NRs) ZnO@TiO2 core-shell (CS) nanoarrays were fabricated using the sol-gel dip-coating technique. TiO2 nanoparticles (NPs) coated as a shell layer over hydrothermally grown NRs. The number of layers on NRs was varied by modulating dipping cycles from 1 to 3 optimize their transmittance. optimized CS with two display 2% enhancement optical transmission compared In addition, superhydrophilicity (contact angle ∼of 12°) stimulates nature thin...
Abstract ZnO nanostructures have attracted great attention for possible applications in optoelectronic and spintronic devices. The electrical resistivity because of carriers can be improved by the introduction Li ions, as is a dopant achieving p‐type ZnO. We carried out comprehensive micro‐Raman scattering study phonons 1% Li‐ undoped needle crystals grown annealed at 1073 K 1 2 h under oxygen environment. Phonon mode doped does not show any measurable shift doping concentration 1%. As line...
Solar energy-driven hydrogen generation through the water-splitting (WS) method is an efficient approach to conquer worldwide energy shortage in near future and environmental pollution by employing a suitable semiconductor photocatalyst. Herein, structural, electronic, photocatalytic properties of MoS2/WS2 heterobilayer are thoroughly inspected with biaxial strain for their use WS applications. Furthermore, among six considered stacking patterns heterostructure (HS), conf-1 has most stable...
We report on colloidal Cu2ZnSnS4 (CZTS) and Cu2-xAgxZnSnS4 (X=0.25) nanoparticles synthesis by sol-gel spin coating process hot injection method. The were deposited ITO substrates using spin-coating techniques. thin films characterized X-ray diffraction (XRD), UV-visible spectrometer, FE-SEM, Raman spectroscopy Keithley 2450 Source meter. XRD reveals that the crystal structure of CZTS is confirmed tetragonal with peak (112) observed changes to wurtzite (002) due presence Ag. UV visible...
The present study investigates the influence of hydrostatic pressure on electronic structure and electron–phonon coupling in Ba0.6K0.4BiO3 (BKBO) cubic superconductor using first-principles calculations. increase applied increases degree orbital hybridization between Bi-s O-pσ states. Also, suppression oxygen hole is observed with increasing pressure, states play a more crucial role metallicity material. lattice dynamics reveals that BKBO compound dynamically stable up to an ∼7 GPa. primary...
Abstract Undoped and cesium‐doped zinc oxide (ZnO) thin films have been deposited on sapphire substrate (0001) using the sol–gel method. Films were preheated at 300 °C for 10 min annealed 600 800 1 h. The grown confirmed to be of wurtzite structure X‐ray diffraction. Surface morphology was analyzed scanning electron microscopy. photoluminescence (PL) spectra ZnO showed a strong ultraviolet (UV) emission band located 3.263 eV very weak visible associated with deep‐level defects. Cesium...