A5063801159- Advanced Optical Sensing Technologies
- Advanced Fiber Laser Technologies
- Advanced Fluorescence Microscopy Techniques
- CCD and CMOS Imaging Sensors
- Photonic and Optical Devices
- Ocular and Laser Science Research
- Solid State Laser Technologies
- Advanced Semiconductor Detectors and Materials
- Laser Design and Applications
- Photoacoustic and Ultrasonic Imaging
- Laser-Matter Interactions and Applications
- Thin-Film Transistor Technologies
- Advanced MEMS and NEMS Technologies
- Infrared Target Detection Methodologies
Photonics (United States)
2024
Heriot-Watt University
2022-2023
Scottish Universities Physics Alliance
2023
Single-photon detectors with picosecond timing resolution have advanced rapidly in the past decade. This has spurred progress time-correlated single-photon counting applications, from quantum optics to life sciences and remote sensing. A variety of optoelectronic device architectures offer not only high-performance single-pixel devices but also ability scale up detector arrays extend sensitivity into short-wave infrared beyond. The advent focal plane is poised revolutionize imaging In this...
Germanium-on-Silicon (Ge-on-Si) avalanche photodiodes (APDs) are of considerable interest as low intensity light detectors for emerging applications. The Ge absorption layer detects at wavelengths up to ≈ 1600 nm with the Si acting an medium, providing high gain excess noise. Such APDs typically used in waveguide configurations growing a sufficiently thick absorbing is challenging. Here, we report on new vertically illuminated pseudo-planar Ge-on-Si APD design utilizing 2 µm absorber and 1.4...
Single photon avalanche diodes (SPADs) are semiconductor photodiode detectors capable of detecting individual photons, typically with sub-ns precision timing. We have previously demonstrated novel pseudo-planar germanium-on-silicon SPADs absorption into the short-wave infrared, which promise lower costs and potentially easier CMOS integration compared to III-V SPADs. Here we simulated dark count rate these devices, using a custom solver for McIntyre's model trap assisted tunnelling...
We report on a room temperature Kerr-lens mode-locked chromium-doped zinc selenide (Cr:ZnSe) laser emitting four optical-cycles pulses in the mid-infrared spectral region which polycrystal has been treated by hot isostatic pressing (HIP). The emits 34 fs at 2.4 μm, with repetition rate of 171 MHz and average output power capabilities up to 150 mW. This is first mode-locking investigation conducted using HIP material our knowledge, shortest pulse width demonstrated, date, from polycrystalline...
Single Photon Avalanche Diodes (SPADs) are semiconductor devices capable of accurately timing the arrival single photons light. Previously, we have demonstrated a pseudo-planar Ge-on-Si SPAD that operates in short-wave infrared, which can be compatible with Si foundry processing. Here, investigate design simulation and experiment to establish spatial contributions dark-count rate, will ultimately facilitate optimisation towards operation at temperatures Peltier cooler technologies.
In this letter, we investigate afterpulsing in 26 and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$100~\mu \text{m}$ </tex-math></inline-formula> diameter planar geometry Ge-on-Si single-photon avalanche diode (SPAD) detectors, by use of the double detector gating method with a gate width 50 ns. SPADs were found to exhibit 1% probability at delay time notation="LaTeX">$200~\mu \text{s}$ temperature 78...
Results from the development of substrate illuminated planar Ge on Si Single Photon Avalanche Diodes (SPAD) imaging arrays will be presented operating at short wave infrared wavelengths. Simulations have been used to optimize designs aiming reduce dark count rates and increase number absorbed photons for Pelter cooler operation whilst also minimizing cross talk. To date highest performance SPADs has demonstrated 125 K with 38% single photon detection efficiencies a noise equivalent power...
Detection in the short-wave infrared (SWIR) offers advantages like reduced solar noise and improved atmospheric transmission. Avalanche photodiodes (APDs) are ideal for low-light detection due to internal gain. While silicon (Si) APDs have low noise, they can't effectively detect SWIR light. Germanium (Ge) is good but suffers from high noise. Ge-on-Si structure benefits operation efficient multiplication. This study showcases room temperature of a linear-mode pseudo-planar APD with...
Single photon avalanche diodes (SPADs) are a key underpinning technology to many existing and emerging applications, including LIDAR for 3D imaging as well quantum imaging, encryption information applications. There is growing demand low-cost systems autonomous vehicles, particularly in the short-wave infrared (SWIR) spectral range, which enables long-range measurements whilst complying with eye-safety regulations offers enhanced transmission through atmospheric obscurants like smoke haze...
We report on a room temperature Kerr-lens mode-locked chromium-doped zinc selenide (Cr:ZnSe) laser emitting four optical-cycles pulses in the midinfrared spectral region which crystal has been treated by hot isostatic pressing (HIP). The emits 34 fs at 2.4 µ m, with repetition rate of 171 MHz and average output power capabilities up to 150 mW. This is first mode-locking investigation conducted using HIP material our knowledge, shortest pulse width demonstrated, date, from polycrystalline...
Semiconductor based single-photon avalanche diode (SPAD) detectors are widely used in quantum technology applications, which focus on the arrival time of single photons. Using germanium as absorption region a Separate Absorption and Multiplication design solves operating limitation beyond spectrum range silicon, i.e. typically at wavelength ~ 1000 nm. Our first-generation planar geometry Ge-on-Si diodes utilised nm Germanium showed extremely low noise-equivalent-power 7.7 × 10−17 WHz−½ 1310...