A5100349508- Plasma Diagnostics and Applications
- Laser-induced spectroscopy and plasma
- Diamond and Carbon-based Materials Research
- Semiconductor materials and devices
- Metal and Thin Film Mechanics
- Plasma Applications and Diagnostics
- Magnetic confinement fusion research
- Dust and Plasma Wave Phenomena
- Lightning and Electromagnetic Phenomena
- Atomic and Molecular Physics
- Copper Interconnects and Reliability
- Integrated Circuits and Semiconductor Failure Analysis
- Ion-surface interactions and analysis
- Vacuum and Plasma Arcs
- Ionosphere and magnetosphere dynamics
- High voltage insulation and dielectric phenomena
China Southern Power Grid (China)
2022
Beihang University
2020
China Academy of Engineering Physics
2017
University of Houston
2013-2016
Eindhoven University of Technology
2014
China Academy of Space Technology
2009
University of Science and Technology of China
2007-2009
Chinese Academy of Sciences
2009
Institute of Plasma Physics
2007
Cl2, Br2, HBr, Br2/Cl2, and HBr/Cl2 feed gases diluted in Ar (50%–50% by volume) were used to study etching of p-type Si(100) a rf inductively coupled, Faraday-shielded plasma, with focus on the photo-assisted component. Etching rates measured as function ion energy. at energies below threshold for ion-assisted was observed all cases, Br2/Ar HBr/Cl2/Ar plasmas having lowest highest sub-threshold rates, respectively. Sub-threshold scaled product surface halogen coverage (measured X-ray...
In this article, four kinds of optical emission spectroscopic methods determining electron temperature are used to investigate the relationship between and pressure in cylindrical plasmas dc glow discharges at low pressures laboratory by measuring relative intensities ArI lines various pressures. These developed respectively on basis Fermi–Dirac model, corona two collision cross section models according kinetic analysis. Their theoretical bases conditions which they applicable reviewed,...
The control of electron energy probability functions (EEPFs) in low pressure partially ionized plasmas is typically accomplished through the format applied power. For example, use pulse power, EEPF can be modulated to produce shapes not possible under continuous wave excitation. This technique uses internal control. In this paper, we discuss a method for external EEPFs by transport electrons between separately powered inductively coupled (ICPs). reactor incorporates dual ICP sources (main...
Various mechanisms have been proposed to explain photo-assisted etching (PAE) of Si, including photogenerated carrier-mediated etching, photon-stimulated desorption, and photon-induced damage (breaking Si–Si bonds) caused mainly by vacuum ultraviolet photons irradiating the substrate. In this study, authors use optical emission spectroscopy gain an insight into possible in-plasma PAE mechanisms. Emissions from Cl, SiCl, Ar were recorded as a function power while p-Si in Cl2/Ar...
Plasma ignition delays were observed in a 'main' inductively coupled plasma (ICP), tandem with an 'auxiliary' ICP. The Faraday-shielded ICPs separated by grounded metal grid. Power (13.56 MHz) to the main ICP was pulsed frequency of 1 kHz, while auxiliary operated continuous wave (cw) mode. In chlorine plasmas, delay for duty cycles greater than 60% and, contrast expectation, longer increasing cycle up ~99.5%. could be varied changing and/or power. Langmuir probe measurements provided...
Selectivity of etching between physical vapor-deposited TiN and TaN was studied in chlorine-containing plasmas, under isotropic conditions. Etching rates for blanket films were measured in-situ using optical emission the N2 (C3Πu →B3Πg) bandhead at 337 nm to determine time, transmission electron microscopy starting film thickness. The selectivity Cl2/He or HCl/He plasmas poor (<2:1). There a window very high over by adding small amounts (<1%) O2 plasma. Reverse (10:1 TiN)...
Atom oxygen (AO) can cause most spacecraft material erosion seriously. Liquid-exfoliated graphene by jet cavitation was used to coat Kapton employed on enhance its AO resistance. The coating prepared vacuum filtering and transferring. After exposure, compared with naked Kapton, the mass loss of coated reduced 3.73% yield 3.67%. reacted then left in coating. degenerated slightly, but still performed well. We believe that could be potentially applied increase material’s life span spacecraft.
Fluid models have successfully explained the physics of a variety plasmas. To solve fluid model, discretization scheme commonly used is exponential difference (EDS) (Sharfetter D et al 1969 IEEE Trans. Electron Devices 16 64–77). We present an extension EDS, complete flux (ten Thije Boonkkamp J H M 2011 J. Sci. Comput. 46 47–70) and show that for typical glow discharge it ten times more accurate.
Abstract The physical mechanism of leader formation and development is not well understood. In this study, we present experimental simulation results obtained with a 10 m long air gap discharge. A outdoor discharge experiment carried out to obtain the current, voltage, optical image during process. Four different impulse voltages were applied rod‐plane gap. measured current used as an input for plasma model, then temperature electric field could be calculated. show that streamer stem dark...
Electric probe and analytical emission spectroscopy were used to acquire I-V curve spectra of cylindrical plasmas produced by dc high-voltage discharge in the laboratory. The electron excitation temperature, temperature density obtained using respectively energy probability function, Fermi-Dirac model Schottky diffusion theory low pressure discharge. inherent relationships between method for determination temperatures, low-pressure estimation density, electric calculation explored. Further...
An investigation was made into the argon plasma jet that expanded in a low-pressure vacuum chamber. The spatial distributions of parameters with different supplied powers were measured using ten-channel Langmuir probe array. chemical species identified by emission spectroscopy. electron excitation temperatures at two positions, 10 cm and 50 downstream from nozzle exit calculated, respectively, Boltzmann plot method.
Summary form only given. In plasma materials processing, finer control of the electron energy distribution, f(ε), can allow for better selectivity generating reactants produced by impact excitation and dissociation. This is particularly great importance in low pressure, inductively coupled plasmas (ICPs) where dissociation products often react with surfaces before interacting other gas phase species, so these fluxes are most directly a function rate coefficients. The reaction coefficients,...