Anton Tadich

ORCID: 0000-0001-9455-5901
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About
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Research Areas
  • Diamond and Carbon-based Materials Research
  • Graphene research and applications
  • Electronic and Structural Properties of Oxides
  • Semiconductor materials and devices
  • Topological Materials and Phenomena
  • 2D Materials and Applications
  • Molecular Junctions and Nanostructures
  • Silicon Carbide Semiconductor Technologies
  • Electrocatalysts for Energy Conversion
  • Electron and X-Ray Spectroscopy Techniques
  • Surface Chemistry and Catalysis
  • Metal and Thin Film Mechanics
  • Advanced Condensed Matter Physics
  • ZnO doping and properties
  • Copper-based nanomaterials and applications
  • Quantum and electron transport phenomena
  • Advanced Chemical Physics Studies
  • Force Microscopy Techniques and Applications
  • Surface and Thin Film Phenomena
  • High-pressure geophysics and materials
  • Carbon Nanotubes in Composites
  • Machine Learning in Materials Science
  • Perovskite Materials and Applications
  • Chalcogenide Semiconductor Thin Films
  • Nuclear materials and radiation effects

Australian Synchrotron
2016-2025

Australian Nuclear Science and Technology Organisation
2019-2025

ARC Centre of Excellence in Future Low-Energy Electronics Technologies
2018-2024

Monash University
2018-2024

La Trobe University
2014-2024

Madrid Institute for Advanced Studies
2024

Clayton Foundation
2019-2020

University of Technology Sydney
2015

Blackburn College
2013

University of Auckland
2010

Metal halide perovskites represent a family of the most promising materials for fascinating photovoltaic and photodetector applications due to their unique optoelectronic properties much needed simple low-cost fabrication process. The high atomic number (Z) constituents significantly higher carrier mobility also make perovskite semiconductors suitable detection ionizing radiation. By taking advantage that, direct soft-X-ray-induced photocurrent is demonstrated in both rigid flexible...

10.1002/adma.201901644 article EN Advanced Materials 2019-06-06

Abstract Sulfur is an important electrode material in metal−sulfur batteries. It usually coupled with metal anodes and undergoes electrochemical reduction to form sulfides. Herein, we demonstrate, for the first time, reversible sulfur oxidation process AlCl 3 /carbamide ionic liquid, where electrochemically oxidized by 4 − AlSCl 7 . The is: 1) highly efficiency of ~94%; 2) workable within a wide range high potentials. As result, Al−S battery based on can be cycled steadily around ~1.8 V,...

10.1038/s41467-021-26056-7 article EN cc-by Nature Communications 2021-09-29

Hydrogen is emerging as an alternative clean fuel; however, its dependency on freshwater will be a threat to sustainable environment. Seawater, unlimited source, can alternative, but salt-rich nature causes corrosion and introduces several competing reactions, hindering use. To overcome these, unique catalyst composed of porous sheets nitrogen-doped NiMo3 P (N-NiMo3 P) having sheet size microns designed. The presence large homogenous pores in the basal plane these makes them catalytically...

10.1002/smll.202207310 article EN cc-by-nc Small 2023-02-08

Abstract 2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the existence 1D spin–momentum locked metallic edge states—both helical chiral—surrounding an electrically insulating bulk. Forty years since first discoveries phases condensed matter, abstract concept topology has sprung into realization with several...

10.1088/2515-7639/ad2083 article EN cc-by Journal of Physics Materials 2024-01-19

The Soft X‐ray beamline at the Australian synchrotron has been constructed around a collimated light Plane Grating Monochromator taking from an Elliptically Polarized Undulator (EPU). covers wide photon energy range between 90 to 2500 eV, using two gratings of 250 l/mm and 1200 l/mm. At present output monochromator is directed into one branchline with dedicated UHV endstation. measured performance in flux resolution shown be very close that theoretical calculations.

10.1063/1.3463197 article EN AIP conference proceedings 2010-01-01

The heterojunctions of different n-type buffers, i.e., CdS, Zn(O,S), and In2S3 on p-type Cu2ZnSnS4 (CZTS) were investigated using X-ray Photoelectron Spectroscopy (XPS) Near Edge Absorption Fine Structure (NEXAFS) Measurements. band alignment the formed between CZTS buffer materials was carefully measured. XPS data used to determine Valence Band Offsets (VBO) buffer/CZTS heterojunctions. Conduction Offset (CBO) calculated indirectly by directly measured NEXAFS characterization. CBO CdS/CZTS...

10.1063/1.4873715 article EN Applied Physics Letters 2014-04-28

An analysis program for near-edge X-ray absorption fine-structure (NEXAFS) spectra has been developed and implemented at the soft beamline of Australian Synchrotron. The allows instant viewing corrected data channels including normalizations to a standard, double when standard itself an undesired spectral response, background subtraction. performs simple compositional peak fitting includes rapid common calculations such as average tilt angle molecules with respect surface, determination...

10.1107/s1600577515018688 article EN Journal of Synchrotron Radiation 2015-12-09

Fast and reliable DNA sequencing is a long-standing target in biomedical research. Recent advances graphene-based electrical sensors have demonstrated their unprecedented sensitivity to adsorbed molecules, which holds great promise for label-free technology. To date, the proposed approaches rely on ability of graphene electric devices probe molecular-specific interactions with surface. Here we experimentally demonstrate use field-effect transistors (GFETs) as probes presence layer individual...

10.1038/ncomms7563 article EN cc-by-nc-nd Nature Communications 2015-03-24

Abstract Many advanced applications of diamond materials are now being limited by unknown surface defects, including in the fields high power/frequency electronics and quantum computing sensing. Of acute interest to researchers worldwide is loss coherence near‐surface nitrogen‐vacancy (NV) centers generation associated magnetic noise at surface. Here for first time presented observation a family primal which suggested as leading cause band‐bending Fermi‐pinning phenomena devices. A...

10.1002/admi.201801449 article EN publisher-specific-oa Advanced Materials Interfaces 2018-12-03

<bold>Hole for faster OER:</bold> The hole state induced by Fe<sup>4+</sup> promotes the OER process. It reduces energy barrier electron transfer at interface and facilitates a from reaction intermediates to catalyst.

10.1039/c9ta13313e article EN Journal of Materials Chemistry A 2020-01-01

Transition metal oxides are being actively pursued as low-cost electrocatalysts for the oxygen evolution reaction (OER) in many electrochemical energy devices. A fundamental understanding of oxide electronic structures, along with ability to rationally tune them, is a key step toward designing highly active catalysts. Here, we report tuning structure NiO via Li doping (LixNi1–xO) enhance OER activities. We identified that Li0.5Ni0.5O (LiNiO2) has highest activity, comparable or exceeding...

10.1021/acs.chemmater.8b03776 article EN Chemistry of Materials 2018-12-26

CuWO<sub>4</sub> is an n-type oxide semiconductor with a bandgap of 2.2 eV which exhibits great potential for photoelectrochemical (PEC) conversion solar energy into chemical fuels.

10.1039/c8ta12070f article EN Journal of Materials Chemistry A 2019-01-01

The lanthanoid hafnates Ln2Hf2O7 (Ln = La, Pr, Nd, Sm–Tm) were studied using a combination of synchrotron X-ray and neutron powder diffraction together with absorption Raman spectroscopy. Spectroscopic methods revealed gradual increase in disorder from the ideal pyrochlore structure to defect fluorite as size Ln cation increases. line shape Hf L3-edge near edge spectra which is sensitive local coordination environment changed increasing disorder. general O K-edge XANES also indicated an...

10.1021/jp311329q article EN The Journal of Physical Chemistry C 2013-01-11

This work reports a fundamental study on the electronic structure, optical properties, and defect chemistry of series Co-based spinel oxide (${\mathrm{Co}}_{3}{\mathrm{O}}_{4}, {\mathrm{ZnCo}}_{2}{\mathrm{O}}_{4}$, ${\mathrm{CoAl}}_{2}{\mathrm{O}}_{4}$) epitaxial thin films using x-ray photoemission absorption spectroscopies, spectroscopy, transport measurements, density functional theory. We demonstrate that ${\mathrm{ZnCo}}_{2}{\mathrm{O}}_{4}$ has bandgap 1.3 eV, much smaller than...

10.1103/physrevb.100.115301 article EN Physical review. B./Physical review. B 2019-09-03

Diamond surface termination with substitutional nitrogen is reported, leading to the formation of a stable which essentially clear sub-band states and has positive electron affinity. This predicted be an ideal environment for near-surface nitrogen-vacancy centers in diamond may enable magnetic quantum sensing breakthroughs these devices. As service our authors readers, this journal provides supporting information supplied by authors. Such materials are peer reviewed re-organized online...

10.1002/admi.201500079 article EN Advanced Materials Interfaces 2015-05-08

The stability of the surface vacuum-cleaved topological insulator Bi2Se3 single crystals is investigated with high-resolution synchrotron-based photoelectron spectroscopy. While stable at room temperature in vacuum, a Bi2 layer always forms upon even brief (5 min) exposure to atmosphere. This accompanied by depletion selenium near region and 1.4 eV decrease work function. found be return ultrahigh vacuum conditions but unstable prolonged air, ultimately resulting two possible different...

10.1021/jp506089b article EN The Journal of Physical Chemistry C 2014-08-21

Intrinsic magnetic topological insulators offer low disorder and large band gaps for robust phases operating at higher temperatures. By controlling the layer thickness, emergent phenomena such as quantum anomalous Hall (QAH) effect axion insulator have been realized. These observations occur temperatures significantly lower than Néel temperature of bulk MnBi2Te4, measurement energy gap Dirac point in ultrathin MnBi2Te4 has yet to be achieved. Critical achieving promise this system is a...

10.1021/acsnano.1c03936 article EN ACS Nano 2021-08-13

Abstract The naturally self‐limiting oxide formed on the surface of liquid metals can be exfoliated and transferred onto various substrates. This layer with a thickness few nanometers is typically highly transparent engineered for applications in large‐area optoelectronics. While incorporation solvated elements into interfacial post‐transition metal‐based demonstrated n ‐doping, achieving p ‐doping such ultrathin layers remains significant challenge. In this study, use dissolved indium (In),...

10.1002/adfm.202425108 article EN cc-by Advanced Functional Materials 2025-03-12

Al 2 O 3 films were deposited as alternative gate dielectric on hydrogen-terminated 6H-SiC(0001) by atomic layer chemical vapor deposition and characterized photoelectron spectroscopy (PES) admittance measurements. The PES results indicate an abrupt interface free of significant Si–suboxide contributions where the Al2O3 is connected to SiC bridging oxygen atoms. measurements yield state density which lower than that thermally formed oxide show in particular no increase toward conduction band...

10.1063/1.1609053 article EN Applied Physics Letters 2003-08-29

Surface sensitive C1s core level photoelectron spectroscopy was used to examine the electronic properties of C(60)F(48) molecules on C(100):H surface. An upward band bending 0.74 eV in response surface transfer doping by fluorofullerene is measured. Two distinct molecular charge states are identified and their relative concentration determined as a function coverage. One corresponds ionized that participate other neutral do not. The position lowest unoccupied orbital which relevant acceptor...

10.1063/1.3695643 article EN The Journal of Chemical Physics 2012-03-23
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