A5018015335- Radio Frequency Integrated Circuit Design
- Semiconductor Lasers and Optical Devices
- Microwave Engineering and Waveguides
- Advanced Power Amplifier Design
- Semiconductor Quantum Structures and Devices
- Tunneling and Rock Mechanics
- Superconducting and THz Device Technology
- Advancements in Semiconductor Devices and Circuit Design
- Neural Networks and Reservoir Computing
- Geotechnical Engineering and Analysis
- Molecular Junctions and Nanostructures
- Microwave and Dielectric Measurement Techniques
- Bluetooth and Wireless Communication Technologies
- Electromagnetic Compatibility and Noise Suppression
- Photonic and Optical Devices
- Rock Mechanics and Modeling
- Antenna Design and Analysis
- GaN-based semiconductor devices and materials
Ruhr University Bochum
2020-2025
In this work, we present a fully integrated <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$D$</tex-math> </inline-formula> -band notation="LaTeX">$\times$</tex-math> 12 SiGe-based frequency multiplier chain. It comprises two doubling and one tripling stage. Each stage uses an architecture that ensures high harmonic rejection at its output and, thus, ultimately, frequencies. The focus of work is on...
In this article, a literature study has been conducted including 398 radar circuit elements from 311 recent publications (mostly between 2010 and 2022) that have reported mainly in the F-, D- G-Band (80–200 GHz). This is intended to give state-of-the-art comparison on performance of different technologies—RFCMOS, SiGe/BiCMOS III–V semiconductor composites—regarding most crucial parameters Voltage-Controlled Oscillators (VCO), Power Amplifiers (PA), Phase Shifters (PS), Low-Noise (LNA)...
A method to obtain the permittivity and gauge loss tangent of packaging materials at frequencies around 77 GHz from a single package is presented in this paper. In-package ring resonators, calibrated with an integrated TRL standard, are measured their results contrasted adaptive 3D elec-tromagnetic simulations. By comparing resonance frequency peak bandwidth, characteristics RDL separating dielectric mold compound were extracted, respectively. The validated Infineons eWLB technology minimal...
We investigate and compare the intensity polarization dynamics in a vertical-cavity surface-emitting laser (VCSEL) with monolithically integrated, electrically controlled birefringence tuning mechanism. The influence of bias current on is investigated over large range values. Bias toward low values simultaneous maximization resonance frequency an important strategy to optimize spin-VCSEL energy-efficient operation. A from few GHz up maximum 36 was achieved, at are demonstrated minimum high...
We present a 2-way, 4-stage power amplifier (PA) in TSMC's 28nm CMOS-bulk technology. The D-Band PA consists of three capacitively-neutralized, common-source (CS) gain stages conjunction with cascode output stage. All are realized differentially the interstage match, DC-block and bias voltages provided via use transformers. achieves saturated maximum 12.8dBm, small signal above 36dB, 3dB bandwidth 31.3GHz covering range 106-137.3GHz. Its consumption 286mW is derived from dual-supply 0.9/1.8V...
Vertical-cavity surface-emitting lasers (VCSELs) are commonly used in optical data communication mainly for short-haul transmissions centers. Spin-VCSELs can be a promising solution order to overcome the bandwidth limitations of conventional VCSELs by utilizing spin and polarization instead current intensity. Recently, their dynamics have been enhanced resonance frequencies more than 200 GHz implementing large amount birefringence into laser cavity. For future applications onchip solutions...