A5030590888- Radio Frequency Integrated Circuit Design
- Microwave Engineering and Waveguides
- Photonic and Optical Devices
- Antenna Design and Analysis
- Electromagnetic Compatibility and Noise Suppression
- Advanced Power Amplifier Design
- Acoustic Wave Resonator Technologies
- Advanced Photonic Communication Systems
- Microwave and Dielectric Measurement Techniques
- Ultrasonics and Acoustic Wave Propagation
- Analog and Mixed-Signal Circuit Design
- Bluetooth and Wireless Communication Technologies
- Microwave Imaging and Scattering Analysis
- Superconducting and THz Device Technology
- Advanced SAR Imaging Techniques
- Advanced Antenna and Metasurface Technologies
- Radar Systems and Signal Processing
- Semiconductor Lasers and Optical Devices
- Advancements in PLL and VCO Technologies
- GaN-based semiconductor devices and materials
Ruhr University Bochum
2021-2025
Infineon Technologies (Germany)
2020
In this work, we present a fully integrated <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$D$</tex-math> </inline-formula> -band notation="LaTeX">$\times$</tex-math> 12 SiGe-based frequency multiplier chain. It comprises two doubling and one tripling stage. Each stage uses an architecture that ensures high harmonic rejection at its output and, thus, ultimately, frequencies. The focus of work is on...
A sparse, ultra-wideband, multi-module 1D MIMO array at D-band (110–160 GHz) is proposed for 2D imaging of hot steel slabs during the rolling process in steelworks. In this paper, concept, hardware design, and real-time signal processing will be presented.
A method to obtain the permittivity and gauge loss tangent of packaging materials at frequencies around 77 GHz from a single package is presented in this paper. In-package ring resonators, calibrated with an integrated TRL standard, are measured their results contrasted adaptive 3D elec-tromagnetic simulations. By comparing resonance frequency peak bandwidth, characteristics RDL separating dielectric mold compound were extracted, respectively. The validated Infineons eWLB technology minimal...
This paper presents a wideband D-Band transceiver MMIC in Infineon's 0.13 $\mu$mSiGe BiCMOS technology BIIHFC. The has four channels and is designed for an FMCW MIMO radar application with Time Division Multiplexing. Each channel can either be operated as transmitter or receiver. Measurements show maximum transmitted power of 4. 6dBm harmonic rejection 32.5 dBc at the center frequency ($\approx$133GHz). corresponding 3-dB bandwidth covers range 42.5 GHz from 111.5 to 154 GHz. If receiver,...
The design and measurement results of a fully-integrated x12 frequency multiplier for D-Band applications in Infineon's 0.13 µm SiGe BiCMOS technology B11HFC are presented. consists active baluns, doublers, distribution networks, amplifiers, Gilbert cells. To generate signal, the an input signal is first doubled twice then tripled. approach used to triple utilize cells instead push-pull tripler. Overall, exhibits measured 3 dB bandwidth 37.5 GHz at center 136.25 GHz. variation output power...
With recent advancements in SiGe BiCMOS technologies, HBTs with transit frequencies of 300GHz or more can be provided for circuit design. One these is Infineon's newest $90\mathrm{~nm}$ technology, providing an $f_{t}/f_{\max}$ $300\mathrm{GHz}/500\mathrm{GHz}$, respectively. To demonstrate its capabilities regarding high-frequency design, this paper presents a $365\mathrm{GHz}-410\mathrm{GHz}$ push-push frequency doubler driving stage and input balun. Measurements exhibit maximum saturated...
This paper presents and compares the design measurement results of two D-Band MIMO radar IC versions regarding their transmit paths in Infineon's <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.13\ \mu \mathrm{m}$</tex> SiGe BiCMOS technology B11HFC. Each MMIC is mounted on a testing PCB where differential feeding structure connected to rectangular waveguide (RWG). Every has four paths, which generate drive signals, receive paths. These...
We present a 2-way, 4-stage power amplifier (PA) in TSMC's 28nm CMOS-bulk technology. The D-Band PA consists of three capacitively-neutralized, common-source (CS) gain stages conjunction with cascode output stage. All are realized differentially the interstage match, DC-block and bias voltages provided via use transformers. achieves saturated maximum 12.8dBm, small signal above 36dB, 3dB bandwidth 31.3GHz covering range 106-137.3GHz. Its consumption 286mW is derived from dual-supply 0.9/1.8V...
In this paper we present a fully differential power amplifier (PA) in 0.13 μm SiGe BiCMOS technology operating D-Band. The PA has maximum PAE of 6.3 %, saturated output 11.8 dBm at frequency 114 GHz and is designed to an optimum load impedance different from 50 Ω offered by chip PCB transition. the previously PAs for D-Band applications, interstage matching networks consist transmission lines, whereas work transformer used because offers advantage being efficient compact higher-order filter....
Stimulated by a rising interest in the D-Band research and industry, demand for accessible measurement equipment is increasing. As frequency range of vector network analyzers (VNAs) insufficient, analyzer extension (VNAX) modules are needed. Commercially available options consist discrete components, which increases size price such modules. Therefore, this work, we present VNAX module, combines most functions on single SiGe-MMIC. To demonstrate its functionality, compare it to...
This paper presents a WR2.2 push-push frequency doubler with two driving stages using Infineon's advanced 90nm SiGe BiCMOS technology, providing HBTs an <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{f}_{\mathrm{t}}/\mathrm{f}_{\max}$</tex> of 300 GHz/500 GHz, respectively. Compared to conventional doublers, we use design that utilizes transformer-based mode separation. The architecture the is essentially differential cascode amplifier...
<p>Stimulated by a rising interest in the D-Band research and industry, demand for accessible measurement equipment is increasing. As frequency range of vector network analyzers (VNAs) insufficient, analyzer extension (VNAX) modules are needed. Commercially available options consist discrete components, which increases size price such modules. Therefore, this work, we present VNAX module, combines most functions on single SiGe-MMIC. To demonstrate its functionality, compare it to...
<p>Stimulated by a rising interest in the D-Band research and industry, demand for accessible measurement equipment is increasing. As frequency range of vector network analyzers (VNAs) insufficient, analyzer extension (VNAX) modules are needed. Commercially available options consist discrete components, which increases size price such modules. Therefore, this work, we present VNAX module, combines most functions on single SiGe-MMIC. To demonstrate its functionality, compare it to...