A5049916468- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and interfaces
- Perovskite Materials and Applications
- Ferroelectric and Piezoelectric Materials
- Gas Sensing Nanomaterials and Sensors
- Photorefractive and Nonlinear Optics
- Ga2O3 and related materials
- Remote Sensing and Land Use
- ZnO doping and properties
- Transition Metal Oxide Nanomaterials
- Synthesis and properties of polymers
- Advanced Chemical Sensor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Acoustic Wave Resonator Technologies
- Advanced Photocatalysis Techniques
- Solid-state spectroscopy and crystallography
- Supercapacitor Materials and Fabrication
- Advanced Battery Technologies Research
- Microwave Dielectric Ceramics Synthesis
- Electric and Hybrid Vehicle Technologies
- Water Quality Monitoring and Analysis
- Coral and Marine Ecosystems Studies
- Advanced Memory and Neural Computing
- Silicon Carbide Semiconductor Technologies
Institute of Microelectronics
2024
Chinese Academy of Sciences
2024
Shijiazhuang Tiedao University
2021-2023
University of Electronic Science and Technology of China
2014
Wuhan University of Technology
2011
Abstract Metal halide perovskites (MHPs) have been one of the most promising materials for photoelectric, electro‐optical, and all‐optical conversion devices, thanks to their excellent energy conversion. To investigate induced by structural symmetry, herein, carrier dynamics dielectric properties in MHPs are surveyed reviewed as microscopic macroscopic bridge, respectively. The intrinsic correlations between symmetry broken, dynamics, performance systematically analyzed considering band...
We study the impact of top SiO2 interlayer thickness on memory window Si channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) gate structure. The increases thicker SiO2. realize 6.3 V for 3.4 nm Moreover, we find that endurance characteristic degrades increasing initial window.
We study the impact of top SiO2 interlayer thickness on memory window (MW) Si channel ferroelectric field-effect transistor (FeFET) with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) gate structure. find that MW increases increasing interlayer, and such an increase exhibits a two-stage linear dependence. The physical origin is presence different interfacial charges trapped at SiO2/Hf0.5Zr0.5O2 interface. Moreover, we investigate dependence endurance characteristics initial MW. characteristic...
2014 International Conference on Solid State Devices and Materials,Enhancement of Pyroelectric PZT Thick Film Sintered at Low Temperature Pt-Si Substrate by Adding Pb<sub>5</sub>Ge<sub>3</sub>O<sub>11</sub>
In this paper, we investigated the properties of transition metal (TM)-doped α-Ga2O3 using first-principles calculations and Monte Carlo simulations. is a wide-bandgap semiconductor material with enhanced performance lower fabrication costs on sapphire substrates compared to β-Ga2O3. Doping TMs can modify electrical transport, optical absorption, magnetic properties, yet theoretical studies are scarce. Our study focused V, Cr, Mn, Fe impurities. We introduced newly proposed scheme for...