This study investigates the insertion traits of Al 2 O 3 and Y layers (ILs) their effects on phase evolution electrical characteristics polycrystalline Hf 0.5 Zr (HZO) thin films grown by atomic layer deposition (ALD).

The results of a study on the effects aluminum (Al), silicon (Si), and gadolinium (Gd) dopants controlling crystal phases hafnium (Hf) zirconium (Zr) oxide thin films using soft X‐ray absorption spectroscopy (XAS) are presented. Al Si increase orthorhombic phase content in HfO 2 , which is favorable for ferroelectric properties, while Gd advantageous tetragonal ZrO formation beneficial high dielectric constant properties. near‐edge analysis O K‐edge Zr L 2,3 ‐edge used to identify changes...

Hafnium zirconium oxide (HZO) based ferroelectric (FE) devices are promising candidates for next-generation low-power memory applications. Recently, there has been a growing interest in implementing HZO-based superlattice structures to improve...

The electrical characteristics of metal–insulator–metal (MIM) capacitors consisting a ZrO 2 /Al O 3 /ZrO (ZAZ) dielectric film, TiN bottom electrode (BE), and two different top electrodes (TEs; Ru) are examined. enhanced property in the leakage current density versus equivalent oxide thickness ( J – t ox ) plot is observed MIM structure with Ru TE for ZAZ film specific ≈4.6 nm. Especially, due to electron injection from BE was significantly decreased case compared sample at 1–2 MV cm −1...

Ruthenium thin films were grown through atomic layer deposition using (2,4-dimethyloxopentadienyl)(ethylcyclopentadienyl)Ru [Rudense®] and oxygen at temperatures ranging from 250 °C to 270 chamber pressures 0.5 Torr 2.5 Torr.

A metal–insulator–metal (MIM) capacitor consisting of TiN and ZrO 2 /Al O 3 /TiO (ZAT) as electrodes dielectric layer, respectively, is demonstrated for the development next‐generation dynamic random access memory. The TiO layer deposited on –Al exhibits a highly crystallized structure with an anatase phase constant 40, resulting in significant capacitance density enhancement compared conventional /ZrO (ZAZ) film. leakage current ZAT film can be controlled to level comparable that ZAZ film,...

Ruthenium (Ru) thin films deposited via atomic layer deposition (ALD) with a normal sequence and discrete feeding method (DFM) their performance as bottom electrode of dynamic random-access memory (DRAM) capacitors were compared. The DFM-ALD was performed by dividing the Ru purge steps conventional ALD process into four (shorter time + time). surface morphology improved significantly DFM-ALD, preferred orientation changed from relatively random to <101>-oriented direction. Under condition,...

Abstract This study examines the influences of Al 2 O 3 and Y insertion layers (ILs) on structural electrical features ZrO thin films for their application to dynamic random access memory capacitors. The ultra‐thin IL (0.1–0.2 nm) dissolves into layers, which causes top bottom portions film merge have smaller lattice parameters. However, thicker ( &gt;≈ 0.4 forms a continuous layer separates film. Interestingly, diffusion does not occur in this case. Overall, dielectric constant (κ) /Al /ZrO...

The atomic layer deposition process of SrTiO3 (STO) films at 230 °C was studied with Sr(iPr3Cp)2 and Ti(CpMe5)(OMe)3 (Pr, Cp, Me are propyl, cyclopentadienyl, methyl groups, respectively) on Ru substrates. growth behavior properties STO grown were compared those deposited 370 °C. With the limited over-reaction Sr precursor during initial stage a lower temperature, cation composition more controllable, surface morphology after crystallization annealing 650 had uniform grains fewer defects....

Atomic layer deposited TiO₂- and Al₂O₃-based high-<italic>k</italic> gate insulators (GIs) were examined for the Ge-based metal-oxide-semiconductor field effective transistor (MOSFET) application.

In this work, the impact of a tungsten oxide (WO3) seed and capping layer for ferroelectric La-doped (Hf, Zr)O2 (La:HZO) based capacitors, designed with back-end-of-line (BEOL) compatibility, is systematically investigated. The WO3 supplies oxygen to La:HZO throughout fabrication process during device cycling. This facilitates annihilation vacancies (Vo) within layer, thereby stabilizing its orthorhombic phase resulting in an increase remanent polarization (Pr) value capacitor. Moreover,...

Al is doped to a SrTiO 3 (STO) thin film grown by atomic layer deposition (ALD) decrease the leakage current. One ALD cycle of 2 O processed either at top or bottom STO films, and electrical properties are compared with those undoped films. The ≈3.5 nm‐thick seed first deposited crystallized through rapid thermal annealing, from 5 20 main layers subsequently for in situ crystallization layer. When an inserted below layer, films disturbed, bulk dielectric constant degrades 149 (undoped STO)...

The growth behaviors of atomic-layer-deposited (ALD) Ru thin films using the RuO4 precursor and N2/H2 mixed reduction gas on Ta2O5 thin-film/Si substrates were examined. deposited film showed a high rate (>0.3 nm/cycle) compared with other ALD processes (∼0.05–0.1 as well characteristic stepwise saturation respect to (N2/H2) injection time. Detailed analyses revealed that substrate-involved mechanism contributed extraordinary behavior. substrate was reduced Ta metal by gas, produced atoms...

The physicochemical and electrical properties of Pt/Al-doped TiO2 (ATO)/Ru/TiN capacitors were investigated by adopting an atomic-layer-deposited Ru interlayer between the ATO TiN layers. induced local-epitaxial growth films to rutile phase, resulting in improved properties. work function surface morphology Ru/TiN bottom electrode affected capacitors. When was too thin (<1.5 nm) completely cover entire surface, a mixture rutile/anatase/amorphous dielectric grown, negligible improvement With...

SrTiO 3 (STO) films are grown via atomic layer deposition at 370 °C with a two‐step growth method. A 5‐nm‐thick seed is first deposited and annealed rapid thermal annealing (RTA) temperatures ranging from 450 to 650 °C, the main subsequently on for in situ crystallization. When RTA temperature 500 or lower, remains amorphous, also amorphous phase. At 550 temperature, STO film partially crystallized, higher fully crystallized. The oxygen diffuses through vertically aligned grain‐boundaries...

Abstract For Ge‐based metal‐oxide‐semiconductor field‐effect transistor application, high‐k Y 2 O 3 thin films are deposited on Ge single‐crystal substrate using atomic layer deposition. The primary drawbacks of a capacitor with pristine large hysteresis and high leakage current. Through forming gas annealing (FGA), the current can be reduced by approximately three orders magnitude, along reduction interface trap density. However, there is still in capacitance–voltage curves. post‐deposition...

Abstract Y 2 O 3 /TiO bilayer thin films and Y-doped TiO (YTO) were deposited on a Ge substrate by atomic layer deposition at temperature of 250 °C. They used as gate insulators to examine the electrical properties Pt/TiN/TiO /Y /p-Ge Pt/TiN/YTO/p-Ge metal–oxide–semiconductor capacitors. A 7 nm thick film showed lower leakage current density more than one order magnitude compared YTO with same thickness due high conduction band offset between substrate. However, large hysteresis 950 mV. On...

In this study, an Al2O3 capping layer (ACL) was utilized to enhance the surface morphology and electrical properties of SrRuO3 (SRO) electrode films deposited via combined atomic deposition pulsed chemical vapor deposition. To crystallize SRO films, postdeposition annealing (PDA) necessary; however, led material agglomeration degradation morphology. Therefore, address issue, ACL used reduce by inhibiting migration. Next, appropriate thickness PDA conditions, which ensured high crystallinity...

SrRuO3 (SRO) is a promising electrode material for the next-generation dynamic random access memory (DRAM) capacitor. This study focuses on properties of SRO films grown by combining atomic-layer deposition SrO and pulsed-chemical vapor RuO2 component layers using Sr(iPr3Cp)2 (iPr3Cp = 1,2,4-trisisopropyl-cyclopentadienyl) RuO4 precursors, respectively. Changes in Ru concentration electrical during postdeposition annealing (PDA) crystallization were examined detail. crystallized after PDA an...

As the design rule becomes smaller, it increasingly difficult to ensure storage capacitance of DRAM. At present, ZrO 2 /Al O 3 /ZrO (ZAZ) is being used for dielectric film DRAM capacitor. When device &lt; 20nm, ZAZ thickness should be too thin crystalize it. a result, constant lower than expected value, particularly upper layer [1]. In this regard, TiO , which has higher that and crystallization temperature, could an alternative layer. However, small band gap (3.4eV) makes challenging as...

ZrO 2 /Al O 3 /ZrO (ZAZ) structure is widely used as a capacitor dielectric film of Dynamic Random Access Memory (DRAM). This in which Al added an interlayer to improve the leakage current material can meet constant and characteristics required by device. Nonetheless, decreases capacitance density compared with composed single layer, because itself has low upper not crystallized properly. Although this ZAZ been extensively device requirements DRAMs down design rule ~20nm, it difficult...

The impact of asymmetrical doping hafnium zirconate (HZO) based capacitors is studied. By introducing Lanthanum (La) dopant at different stages the HZO deposition process, its effect on orthorhombic phase formation and out-of-plane preferential orientation, as reflected in remnant polarization (2PR), studied using Grazing incident X-ray diffraction (GIXRD) electrical measurements. Furthermore, tri-layer stacks were fabricated a bottom TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML"...

Atomic layer deposition (ALD) of Al 2 O 3 -inserted SrTiO (STO) dielectric thin films were investigated in metal-insulator-metal capacitors for dynamic random access memory. STO exhibit much higher constant compared with currently used ZrO -based films, but the leakage current density is generally due to their low band-gap. To decrease density, insertion ALD-Al could be adopted as -Al -ZrO layer. One ALD cycle film was performed during bottom region film. As a result, thickness 8nm decreased...

For the electrode material of next-generation DRAM capacitor, Ru film was grown by an atomic layer deposition (ALD) process using RuO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> and H xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> as a precursor reactant gas, respectively. The showed abnormal ALD growth behavior with increasing gas injection time on Ta O xmlns:xlink="http://www.w3.org/1999/xlink">5</inf> /Si, substrate. mechanism...