A5020571434- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Electronic and Structural Properties of Oxides
- Copper Interconnects and Reliability
- Semiconductor materials and interfaces
- Catalytic Processes in Materials Science
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
- 2D Materials and Applications
- Silicon and Solar Cell Technologies
- Electron and X-Ray Spectroscopy Techniques
- Silicon Nanostructures and Photoluminescence
- MXene and MAX Phase Materials
- Advancements in Photolithography Techniques
- Metal and Thin Film Mechanics
- Zeolite Catalysis and Synthesis
- Nanowire Synthesis and Applications
- Graphene research and applications
- Photonic and Optical Devices
- Advanced Chemical Physics Studies
- Molecular Junctions and Nanostructures
- Advanced Materials Characterization Techniques
- Thin-Film Transistor Technologies
- Spectroscopy and Quantum Chemical Studies
IMEC
2016-2025
KU Leuven
2016-2025
Imec the Netherlands
2004-2024
VIB-KU Leuven Center for Microbiology
2022
National Yang Ming Chiao Tung University
2022
National University of Malaysia
2022
Material (Belgium)
2017
International Medical Equipment Collaborative
2010
Weizmann Institute of Science
2002
Pennsylvania State University
2002
In search of a proper passivation for high-k Ge metal-oxide-semiconductor devices, the authors have deposited dielectric layers on GeO2, grown at 350–450°C in O2. ZrO2, HfO2, and Al2O3 were by atomic layer deposition (ALD). GeO2 ZrO2 or HfO2 intermix during ALD, together with partial reduction Ge4+. Almost no intermixing occurs ALD. Capacitors show well-behaved capacitance-voltage characteristics both n- p-Ge, indicating efficient Ge∕GeOx interface. The density interface states is typically...
We report on a novel Au-free CMOS process-compatible process for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors. The starts from 150-mm GaN-on-Si substrate with an embedded Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> /Al xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O bilayer gate dielectric, encapsulated by high-temperature low-pressure chemical...
Due to its high intrinsic mobility, germanium (Ge) is a promising candidate as channel material (offering mobility gain of approximately ×2 for electrons and ×4 holes when compared conventional Si channels). However, many issues still need be addressed before Ge can implemented in high-performance field-effect-transistor (FET) devices. One the key provide high-quality interfacial layer, which does not lead substantial drive current degradation both low equivalent oxide thickness short...
Recently, a step-flow growth mode has been proposed to break the inherent molybdenum disulfide (MoS2) crystal domain bimodality and yield single-crystalline MoS2 monolayer on commonly employed sapphire substrates. This work reveals an alternative mechanism during metal–organic chemical vapor deposition (MOCVD) of through anisotropic 2D growth. During early stages, epitaxial symmetry commensurability terraces rather than step inclination ultimately govern orientation. Strikingly, as crystals...
Atomic layer deposition (ALD) is used in applications where inorganic material layers with uniform thickness down to the nanometer range are required. For such thicknesses, growth mode, defining how arranged on surface during growth, of critical importance. In this work, mode zirconium tetrachloride∕water and trimethyl aluminum∕water ALD process hydrogen-terminated silicon was investigated by combining information total amount deposited fraction material. The measured Rutherford...
The physical and electrical properties of gate stacks, where the interlayer is thermally grown in molecular oxygen, are investigated. high-κ layer (, , or ) deposited situ on by atomic deposition. Detailed analysis capacitance-voltage conductance-frequency characteristics these devices provides evidence for efficient passivation Ge(100) surface its thermal oxide layer. A larger flatband voltage hysteresis observed -based as compared to which possibly related more pronounced intermixing between .
The authors apply the conductance method at 25 and 150°C to GaAs–Al2O3 metal-oxide-semiconductor devices in order derive interface state distribution (Dit) as a function of energy bandgap. Dit is governed by two large peaks midgap energies, agreement with unified defect model. S-passivation forming gas annealing reduce parts bandgap, mainly close valence band, reducing noticeably room temperature frequency dispersion. However are not affected these treatments, such that Fermi level pinning...
Two-dimensional (2D) transition metal dichalcogenides are potential low dissipative semiconductor materials for nanoelectronic devices. Such applications require the deposition of these in their crystalline form and with controlled number monolayers on large area substrates, preferably using temperatures compatible temperature sensitive structures. This paper presents a plasma-enhanced atomic layer (PEALD) process 2D WS2 based ternary reaction cycle consisting consecutive WF6, H2 plasma, H2S...
We demonstrate the impact of reducing agents for Chemical Vapor Deposition (CVD) and Atomic Layer (ALD) WS2 from WF6 H2S precursors. Nanocrystalline layers with a two-dimensional structure can be obtained at low deposition temperatures (300-450 °C) without using template or anneal.
The demand for transistors and memory devices with smaller feature sizes increasingly complex architectures furthers the need advanced thin film patterning techniques. A prepatterned, sacrificial layer can be used as a template bottom-up fill of new materials which would otherwise difficult to pattern using traditional top-down lithographic methods. This work investigates initial growth TiN, TiO2, HfO2 films during thermal atomic deposition (ALD) onto high density, amorphous carbon (aC)...
Catalytic decomposition of H<sub>2</sub>S by SnS<sub>2</sub>, with generation H<sub>2</sub>, plays a critical role in the SnCl<sub>4</sub>/H<sub>2</sub>S CVD process.
When two-dimensional (2D) group-VI transition metal dichalcogenides such as tungsten disulfide (WS2) are grown by atomic layer deposition (ALD) for growth control at low temperatures (≤450 °C), they often suffer from a nanocrystalline grain structure limiting the carrier mobility. The crystallinity and monolayer thickness during ALD of 2D materials is determined nucleation mechanism, which currently not well understood. Here, we propose qualitative model WS2 behavior on dielectric surfaces...
Abstract Understanding the growth mechanisms during early stages of atomic layer deposition (ALD) is interest for several applications including thin film deposition, catalysis, and area‐selective deposition. The surface dependence mechanism (ethylbenzyl)(1‐ethyl‐1,4‐cyclohexadienyl)ruthenium O 2 ALD at 325 °C on HfO , Al 3 OH, SiOSi terminated SiO organosilicate glass (OSG) are investigated. experimental results show that precursor adsorption strongly affected by termination dielectric,...
A route is presented for activation of hydrogen-terminated Si(100) prior to atomic layer deposition. It based on our discovery from in situ infrared spectroscopy that organometallic precursors can effectively initiate oxide growth. Narrow nuclear resonance profiling and Rutherford backscattering spectrometry show surface functionalization by pre-exposure 108 Langmuir trimethylaluminum at 300 °C leads enhanced nucleation nearly linear growth kinetics the high-permittivity gate dielectrics...
Germanium combined with high-κ dielectrics has recently been put forth by the semiconductor industry as potential replacement for planar silicon transistors, which are unlikely to accommodate severe scaling requirements sub-45-nm generations. Therefore, we have studied atomic layer deposition (ALD) of HfO2 dielectric layers on HF-cleaned Ge substrates. In this contribution, describe growth characteristics, bulk properties, and interface. Substrate-enhanced occurs: per cycle is larger in...
The authors show the implications that free carrier trapping lifetime has on capacitance-voltage (CV) characterization method applied to metal-oxide-semiconductor (MOS) structures. It is shown that, whereas CV for deducing interface state densities works well Si, generally used frequency range of 100Hz–1MHz much less adapted GaAs MOS Only states in very small portions bandgap are measured with this range, and mainly important midgap region not properly probed. Performing an additional...
We present the interface state distribution at GaAs-oxide interfaces, which consist of two large peaks around mid-gap energies, one donor-like and acceptor-like, as well smaller closer to band-edge are responsible for room temperature frequency dispersion in CV-curves. The latter strongly reduced by S-passivation treatments forming gas anneals, whereas do not get affected such treatments. It is argued that midgap likely caused physical relaxation surface due stress created oxidation, with...
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are of great interest for applications in nano-electronic devices. Their incorporation requires the deposition nm-thin and continuous high-k dielectric layers on 2D TMDs. Atomic layer (ALD) is well established Si surfaces: importance a high nucleation density rapid closure known mechanisms have been thoroughly investigated. In contrast, ALD TMD surfaces less understood quantitative analysis process lacking....
The process characteristics, the surface chemistry, and resulting film properties of Ru deposited by atomic layer deposition from (ethylbenzyl)(1-ethyl-1,4-cyclohexadienyl)Ru(0) (EBECHRu) O2 are discussed. chemistry was characterized both combustion reactions as well EBECHRu ligand release. behavior on TiN starting surfaces at 325 °C strongly influenced Ti(O,N)x segregation growing with consequences for growth per cycle properties. For optimized conditions, films showed high purity low C O...
Area-selective deposition (ASD) is a promising bottom-up manufacturing solution for catalysts and nanoelectronic devices. However, industrial applications are limited as highly selective ASD processes exist only few materials. "Passivation/deposition/defect removal" cycles have been proposed to increase selectivity, but cycling requires the passivation be growth surface well ASD-grown material. Dimethylamino-trimethylsilane (DMA-TMS) can passivate SiO2 surfaces by covering them with...
Area-selective deposition (ASD) enables the growth of materials on target regions patterned substrates for applications in fields ranging from microelectronics to catalysis. Selectivity is often achieved through surface modifications aimed at suppressing or promoting adsorption precursor molecules. Here, we show instead that varying composition can enable ASD by affecting diffusion rather than adsorption. Ru (carbonyl)-(alkylcyclohexadienyl)Ru and H2 produces smooth films metal nitrides,...
Area-selective atomic layer deposition (AS-ALD) is a coveted method for the fabrication of next-generation nano-electronic devices, as it can complement lithography and improve alignment through scale control. Selective reactions small molecule inhibitors (SMIs) be used to deactivate growth on specific surface areas such enable AS-ALD. To investigate new applications ASD, we need insight into SMIs with broad range technology relevant materials. This paper investigates aminosilane oxide...
A theoretical study is presented of the EPR spectra dehydrated Cu(II)-A, Cu(II)-Y and Cu(II)-ZK4 zeolites. B3LYP-DFT geometry optimizations were performed on cluster models representing six-ring sites with different Al contents, as observed for All calculated structures indicated a strong preference Cu(II) ion coordination to oxygens bound rather than Si, together striving planar four-fold oxygen in six-rings. Depending number relative positions aluminiums ring two distinct modes...