A5072776884- Silicon Nanostructures and Photoluminescence
- Nanowire Synthesis and Applications
- Semiconductor materials and interfaces
- Thin-Film Transistor Technologies
- Carbon Nanotubes in Composites
- Quantum Dots Synthesis And Properties
- Crystallization and Solubility Studies
- X-ray Diffraction in Crystallography
- Semiconductor materials and devices
- Laser-Ablation Synthesis of Nanoparticles
- ZnO doping and properties
- Semiconductor Quantum Structures and Devices
- Nanoparticles: synthesis and applications
- Plasmonic and Surface Plasmon Research
- Anodic Oxide Films and Nanostructures
- Chalcogenide Semiconductor Thin Films
- Magnetism in coordination complexes
- nanoparticles nucleation surface interactions
- Copper-based nanomaterials and applications
- Optical and Acousto-Optic Technologies
- Magneto-Optical Properties and Applications
- Advanced Semiconductor Detectors and Materials
- Luminescence Properties of Advanced Materials
- Nanocluster Synthesis and Applications
- Nanotechnology research and applications
Lomonosov Moscow State University
2007-2024
Moscow State University
2007-2023
A series of new tetranuclear heterometallic Zn(II) -Eu(III) complexes have been synthesized, that is, (bpy)2 Zn2Eu2 (naph)10 (1), (naph)8 (NO3)2 (2), and (phen)2 (3), other ones, where naph(-) is the 1-naphthoate anion, bpy=2,2'-bipyridyl, phen=1,10-phenanthroline. The solid-phase consist large supramolecular ensembles due to stacking interactions between aromatic ligands. Photoluminescence (PL) measurements were carried out study PL spectra, lifetimes quantum yields (QY) synthesized at...
Spectra and transients of the photoluminescence (PL) undoped Er-doped size-controlled nanocrystalline Si∕SiO2 multilayered structures with mean nanocrystal size 1.5–4.5nm have been comparatively investigated. The exhibit a strong Er-related PL band at 0.81eV, while efficiency intrinsic Si nanocrystals 1.2–1.7eV decreases by several orders magnitude in comparison structures. At low temperature spectra show dips separated energy TO-phonon bound to transition energies between second third...
We report on the results of theoretical and experimental studies photoluminescense silicon nanocrystals in proximity to plasmonic modes different types. In studied samples, type mode is determined by filling ratio a one-dimensional array gold stripes which covers thin film with quartz substrate. analyze extinction, photoluminesce spectra decay kinetics show that incident emitted light coupled corresponding mode. demonstrate modification extinction under transition from wide narrow stripes....
Comparative studies of photoluminescence (PL) undoped and Er-doped size-controlled nanocrystalline Si/SiO2 superlattice structures show that the optical excitation Si nanocrystals can be completely transferred to Er3+ ions in surrounding SiO2, resulting a strong PL line at 1.5 μm. The yield structure increases for higher photon energy smaller nanocrystal sizes. This highly efficient sensitizing Er-related is explained by coupling between excitons confined neighboring their upper excited states.
The radiofrequency (RF) mild hyperthermia effect sensitized by biodegradable nanoparticles is a promising approach for therapy and diagnostics of numerous human diseases including cancer. Herein, we report the significant enhancement local destruction cancer cells induced RF in presence degraded low-toxic porous silicon (PSi) nanowires (NWs). Proper selection irradiation time (10 min), intensity, concentration PSi NWs, incubation (24 h) decreased cell viability to 10%, which can be...
Silicon nanoparticles (SiNP) are currently of great interest, especially in biomedicine, because their unique physicochemical properties combined with biodegradability. SiNPs can be obtained various ways and have either a non-porous solid (sol-) or porous (por-) structure. In this work, we carry out detailed optical monitoring sol- por-SiNP biodegradation using Raman photoluminescence (PL) micro-spectroscopy. were by ultrasound grinding por-silicon nanowires, created silver-assisted chemical...
Herein, ZnO single crystals doped with group V elements have been grown from melts at high pressure. Dopants were introduced in several forms such as Sb2O3, P, As, Sb, and Zn3X2 (X = Sb) a high-pressure cell. Systematic studies of morphology performed using optical microscopy scanning electron microscopy. The crystal structure lattice parameters studied X-ray diffraction crystallography. Crystals exhibited distinct changes size, shape, color compared to undoped melt-grown due the dopant...
Photoluminescence properties and optical absorption of the structures silicon nanocrystals (nc-Si) in dioxide matrix (SiO 2 ) are investigated extended ranges excitation photon energy from 3 to 20 eV flux 10 16 19 cm -2 . The experimental data explained by considering quantum confinement nc-Si, transfer (exciton diffusion nc-Si ensembles) light scattering dielectrically inhomogeneous medium, as well an influence electronic states SiO on excitation/de-excitation processes nc-Si.
Silicon nanocrystals in silicon nitride matrix are fabricated by thermal annealing of SiNx/Si3N4 multilayered thin films, and characterized transmission electron microscopy, X-ray reflectivity diffraction analysis, photoluminescence photoelectron spectroscopy techniques. Si with a mean size about 4 nm obtained, their properties studied as function SiNx layer thickness (1.6–2 nm) temperature (900–1250 °C). The effect coalescence adjacent throughout the Si3N4 barrier layers is observed, which...
Porous silicon nanowires (pSi NWs) have attracted considerable interest due to their unique structural, optical properties and biocompatibility. The most common method for top-down synthesis is metal-assisted chemical etching (MACE) of crystalline (c-Si) wafers using silver nanoparticles as a catalyst. However, the replacement with bioinert gold (Au NPs) markedly improves efficiency pSi NWs in biomedical applications. present study demonstrates fabrication porous arrays Au NPs catalyst MACE...
Abstract Calculations of the Stark‐effect splitting energy levels Er 3+ ions in SiO 2 layers alternating with quasi‐ordered Si‐nanocrystals have been performed. The is caused by electric field image charges at interface between having different dielectric constants. It has established, that increases increasing difference constants and nanocrystalline layers, as approach interface. results obtained allow us to explain experimental data on an additional spectral broadening photoluminescence...