A5001526034- Nanowire Synthesis and Applications
- Silicon Nanostructures and Photoluminescence
- Quantum and electron transport phenomena
- Iron-based superconductors research
- Molecular Junctions and Nanostructures
- Surface and Thin Film Phenomena
- Laser Material Processing Techniques
- Rare-earth and actinide compounds
- Advancements in Semiconductor Devices and Circuit Design
- Mechanical and Optical Resonators
- Advanced biosensing and bioanalysis techniques
- Thin-Film Transistor Technologies
- Analytical Chemistry and Sensors
- Laser-Ablation Synthesis of Nanoparticles
- Physics of Superconductivity and Magnetism
- Force Microscopy Techniques and Applications
- Semiconductor materials and devices
- Biosensors and Analytical Detection
- Carbon Nanotubes in Composites
- Electrochemical Analysis and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Diamond and Carbon-based Materials Research
- Advanced Biosensing Techniques and Applications
- Advancements in Battery Materials
- Photonic and Optical Devices
Moscow State University
2013-2025
Lomonosov Moscow State University
2016-2025
Technology Centre Prague
2020-2023
Russian Quantum Center
2019-2022
Institute of Physics and Technology
2018
Moscow Institute of Physics and Technology
2018
Institute of Physics and Technology
2018
We report the single-electron tunneling behaviour of a silicon nanobridge where effective island is single As dopant atom. The device gated with thickness and width ∼20 nm, fabricated from commercially available silicon-on-insulator wafer, which was first doped atoms then patterned using unique CMOS-compatible technique. Transport measurements reveal characteristic Coulomb diamonds whose size decreases gate voltage. Such dependence indicates that transistor created an individual arsenic atom...
A control system for the laser interferometer reactive ion etching setup was developed. series of chips with same structure were fabricated precise calibration upper silicon layer silicon-on-insulator material rate. The thickness on each chip varied depending time. height resulting steps measured using semicontact mode an atomic force microscope. For regime in CF4 and O2 gas plasma (flow ratio 20:5, pressure 4 Pa, power 40 W), rate is 0.31 ±0.1 nm/s. adduce parameters allow stopping at a...
Abstract Prussian blue analogues (PBAs) are commonly believed to reversibly insert divalent ions, such as calcium and magnesium, rendering them perspective cathode materials for aqueous magnesium‐ion batteries. In this study, the occurrence of Mg 2+ insertion into nanosized PBA is shown be a misconception conclusive evidence provided unfeasibility process both cation‐rich cation‐poor nickel, iron, copper hexacyanoferrates. Based on structural, electrochemical, IR spectroscopy, quartz crystal...
We have fabricated and examined several Al single electron transistors whose small islands were positioned on top of a counter electrode hence did not come into contact with dielectric substrate. The equivalent charge noise figure all turned out to be surprisingly low, (2.5 - 7)*10E-5 e/sqrt(Hz) at f = 10 Hz. Although the lowest detected originates mostly from fluctuations background charge, contribution tunnel junction conductances was, occasion, found dominant.
Modern trends in optical bioimaging require novel nanoproducts combining high image contrast with efficient treatment capabilities. Silicon nanoparticles are a wide class of nanoobjects tunable properties, which has potential as contrasting agents for fluorescence imaging and coherence tomography. In this paper we report on developing technique fabricating silicon by means picosecond laser ablation porous films nanowire arrays water ethanol. Structural properties these particles were studied...
A single-electron transistor (SET) comprising highly resistive Cr thin-film strips (sheet resistance ∼4 kΩ) instead of traditional tunnel barriers is reported. Two such (∼1 μm long) connect two Al outer electrodes to an island 1 in length equipped with a capacitively coupled gate. This total asymptotic 110 kΩ showed perfect Coulomb blockade and strictly e-periodic reproducible modulation by the gate wide ranges bias (V) (Vg) voltages. In Coulomb-blockade region (|V|⩽ about 0.5 mV), we...
To improve the action of already in use antibiotics or new antimicrobial agents against different bacteria, development effective combinations peptides (AMPs) with enzymes that can quench quorum (QQ) sensing bacterial cells was undertaken. Enzymes hydrolyzing N-acyl homoserine lactones (AHLs) and are signal molecules Gram-negative Gram-positive cells, respectively, were estimated as “partners” for newly designed antimicrobial–enzymatic combinations. The molecular docking six to surface 10 QQ...
Since we still lack a theory of classical turbulence, attention has focused on the conceptually simpler turbulence in quantum fluids. Can such systems identical singly-quantized vortices provide physically accessible "toy model" counterpart? That said, have hitherto lacked detectors capable real-time, non-invasive probing wide range length scales involved turbulence. However, demonstrate here real-time detection by nanoscale resonant beam superfluid $^4$He at 10 mK. The basic idea is that...
Here we present an original CMOS compatible fabrication method of a single-electron transistor structure with extremely small islands, formed by solitary phosphorus dopants in the silicon nanobridge. Its key feature is controllable size reduction nanobridge sequential cycles low energy isotropic reactive ion etching that results decreased number active charge centers (dopants) from hundreds to single one. Electron transport through individual phosphorous lattice was studied. The final...
We report on the results of theoretical and experimental studies photoluminescense silicon nanocrystals in proximity to plasmonic modes different types. In studied samples, type mode is determined by filling ratio a one-dimensional array gold stripes which covers thin film with quartz substrate. analyze extinction, photoluminesce spectra decay kinetics show that incident emitted light coupled corresponding mode. demonstrate modification extinction under transition from wide narrow stripes....
Ge2Sb2Te5 based devices attract the attention of researchers due to wide opportunities in designing phase change memory. Herein, we studied a possibility fabricate periodic micro- and nanorelief at surfaces thin films on silicon oxide/silicon substrates under multi-pulse femtosecond laser irradiation with wavelength 1250 nm. One-dimensional lattices periods ± 90 130 30 nm were obtained depending number acted pulses. Emergence these structures can be explained by plasmon-polariton generation...
The field and temperature dependencies of the longitudinal Hall resistivity have been measured for FeSe${}_{1-x}$S${}_{x}$ (x=0.04, 0.09 0.19) single crystals. sample FeSe${}_{0.81}$S${}_{0.19}$ does not show a transition to an orthorhombic phase exhibits at low temperatures transport properties quite different from those samples. behavior is well described by simple two band model with comparable values hole electron mobility. In particular, transverse resistance shows linear dependence,...
In this paper we implement and test a new approach for the description of electrochemical data (cyclic voltammetry chronoamperometry) phase transforming intercalation electrode materials. This assumes rate-limiting step being associated with slow nucleation in material particles. As model system, used LiFePO4 material. It is shown that all can be self-consistently described assuming only minor influence ionic diffusion interfacial charge transfer kinetics on rates. The developed formalism...
The superior rate capabilities of metal ion battery materials based on Prussian blue analogues (PBAs) are almost exclusively ascribed to the extremely fast solid-state ionic diffusion, which is possible due structural voids and spacious three-dimensional channels in PBA structures. We performed a detailed electroanalytical study alkali diffusivities nanosized cation-rich cation-poor PBAs obtained as particles or electrodeposited films both aqueous non-aqueous media, resulted solid conclusion...
The offset charge noise in metallic single electron tunneling (SET) devices fabricated on dielectric substrates was experimentally studied. On the basis of stereoscopic measurements low-frequency we show that substrate makes an essential contribution to total noise. We have observed intensity SET transistors depends biasing dc current but is almost insensitive temperature variations up 300 mK. Stability investigations trap gave storage times more than 8 h. performance such a device affected...
Background: An experimental and theoretical study of a silicon-nanowire field-effect transistor made silicon on insulator by CMOS-compatible methods is presented. Results: A maximum Nernstian sensitivity to pH change 59 mV/pH was obtained experimentally. The charge the sensor estimated be order thousandth electron in subthreshold mode. Conclusion: for our built top-down approach does not yield one sensors bottom-up approaches. This provides good background development probes with primary...