A5017841002- Photonic and Optical Devices
- Semiconductor materials and devices
- Semiconductor Lasers and Optical Devices
- Advanced Photonic Communication Systems
- Advancements in Semiconductor Devices and Circuit Design
- Optical Network Technologies
- Ferroelectric and Piezoelectric Materials
- Integrated Circuits and Semiconductor Failure Analysis
- Photonic Crystals and Applications
- Ferroelectric and Negative Capacitance Devices
- Advanced Fiber Optic Sensors
- Silicon Nanostructures and Photoluminescence
- Nanofabrication and Lithography Techniques
- Semiconductor materials and interfaces
- melanin and skin pigmentation
- Copper Interconnects and Reliability
- Thin-Film Transistor Technologies
- Dermatology and Skin Diseases
- Urticaria and Related Conditions
- Microwave Dielectric Ceramics Synthesis
- Electronic and Structural Properties of Oxides
- Semiconductor Quantum Structures and Devices
- Optical Coatings and Gratings
- Advanced Fiber Laser Technologies
- Contact Dermatitis and Allergies
National Institute of Advanced Industrial Science and Technology
2012-2025
Geological Survey of Japan
2025
Tokyo Institute of Technology
2023-2024
Photonics Electronics Technology Research Association
2013-2022
Petra University
2017-2021
University of Suwon
2020
Hokkaido University of Science
2018
Fukuoka University
2018
Otto-von-Guericke University Magdeburg
2018
Brandenburg University of Applied Sciences
2018
Drug-induced hypersensitivity syndrome (DIHS) is an adverse reaction with clinical signs of fever, rash and internal organ involvement. In the vast majority patients in Japan, causative drugs for DIHS are limited to following eight: carbamazepine, phenytoin, phenobarbital, zonisamide, mexiletine, dapsone, salazosulfapyridine allopurinol. The association human herpesvirus (HHV)-6 reactivation has been reported by various groups.To confirm relationship between flaring severity HHV-6...
Thin films of (Ba 0.65 Sr 0.35 )TiO 3 (BST) have been prepared by an rf-sputtering method at substrate temperatures 500 to 700°C. The dielectric constant these ranges from 190 700 room temperature. This value changes with the grain size rather than film thickness. about 300 and leakage current density 1×10 -8 A/cm 2 are obtained in 65-nm-thick deposited a temperature 600°C. shows BST can be applied dielectrics dynamic random access memory (DRAM) capacitors.
We achieved 50-Gb/s operation of a ring-resonator-based silicon modulator for the first time. The pin-diode phase shifter, which consists side-wall-grating waveguide, was loaded into ring resonator. forward-biased mode applied, exhibited V(π)L as small 0.28 V · cm at 25 GHz. driving voltage and optical insertion loss were 1.96 V(pp) 5.2 dB, respectively.
A 300-mm silicon photonics platform for large-scale device integration was developed, leveraging 40-nm complementary metal-oxide-semiconductor technology. Through fabrication using this technology platform, wire waveguides were obtained with low propagation losses the C-band (0.4 dB/cm) and O-band (1.3 dB/cm). Several types of wavelength filters, including a coupled resonator optical waveguide (CROW), an arrayed grating, cascaded Mach–Zehnder interferometer, also demonstrated, crosstalk...
Thymus and activation‐regulated chemokine (TARC)/CCL17 macrophage‐derived (MDC)/CCL22 are a pair of CC chemokines known to selectively attract Th2 type memory T cells via CCR4. Here we examined circulating levels TARC MDC in patients with atopic dermatitis (AD) control subjects by using plasma samples, which reflect blood contents more accurately than serum samples. The were significantly elevated AD patients. These values also strongly correlated disease severity lactate dehydrogenase...
Dielectric properties of (Ba 0.5 Sr )TiO 3 and 0.75 0.25 thin films have been investigated, focusing on the effects film structure Ba/Sr compositions dielectric properties. constant increased with increasing grain size improvement in crystallinity. For 50-nm-thick deposited at 660° C, 400 for is larger than that 320 film. This indicated affected by ratio composition. Leakage current density less 1×10 -7 A/cm 2 1 V SiO equivalent thickness 0.38 nm are measured 120° C C-deposited 30 thickness....
Summary Background Food‐dependent exercise‐induced anaphylaxis (FDEIA) due to soybeans is a rare disorder. The allergen responsible for FDEIA has not yet been determined. Objective We characterized the clinical features of patient with tofu , who was well tolerant drinking soy milk. then sought identify soybean allergen(s) in that patient. further studied whether different stabilities pepsin digestion between two products are related their allergenicity. Methods Skin prick tests and...
We present high-speed operation of pin-diode-based silicon Mach-Zehnder modulators that have side-wall gratings on both sides the waveguide core. The use pre-emphasis signals generated with a finite impulse response digital filter was examined in frequency domain to show how works for different parameter sets. In large signal modulation experiments, V(π)L as low 0.29 V·cm obtained at 12.5 Gb/s using fabricated modulator and technique. Operation up 25-Gb/s is possible basically same driving...
We report superior spectral characteristics of silicon-nanowire-based 5th-order coupled resonator optical waveguides (CROW) fabricated by 193-nm ArF-immersion lithography process on a 300-mm silicon-on-insulator wafer. theoretically analyze characteristics, considering random phase errors caused micro fabrication process. It will be experimentally demonstrated that the devices exhibit low excess loss 0.4 ± 0.2 dB, high out-of-band rejection ratio >40dB, and wide flatband width ~2 nm....
We previously proposed a photonics-electronics convergence system to solve bandwidth bottleneck problems among large-scale integrations (LSIs) and demonstrated high density with silicon optical interposers at room temperature. For practical applications, the should be usable under high-temperature conditions or rapid temperature changes so that they can cope heat generated by mounted LSIs. designed fabricated athermal integrated temperature-insensitive components on substrate. An arrayed...
One of the most serious issues in information industries is bandwidth bottleneck inter-chip interconnects. We propose a photonics-electronics convergence system to solve this issue. fabricated high density optical interposer demonstrate feasibility by using silicon photonics integrated with an arrayed laser diode, splitter, modulators, germanium photodetectors, and waveguides on single substrate. Error-free data transmission at 12.5 Gbps 6.6 Tbps/cm2 were achieved interposer. believe...
We report good phase controllability and high production yield in Si-nanowire-based multistage delayed Mach-Zehnder interferometer-type optical multiplexers/demultiplexers (MUX/DeMUX) fabricated by an ArF-immersion lithography process on a 300 mm silicon-on-insulator (SOI) wafer. Three kinds of devices this work exhibit clear 1×4 Ch wavelength filtering operations for various frequency spacing. These results are promising their applications high-density division multiplexing-based interconnects.
We conducted numerical simulations on behavior of CO2 injected into a saline aquifer and resulting changes self-potential (SP) at wellheads to investigate whether it can be an effective tool for the CCS monitoring. They include parameter studies using simple model with vertical wells 1) thickness reservoir 2) reaching depth leak paths along wells, case study representing offshore site directional referring geometry Tomakomai demonstration project site. The simulated results were compared...
The dielectric relaxation of (Ba 0.5 Sr )TiO 3 thin films with high electric resistivity is investigated. are deposited by an rf-magnetron sputtering method in atmosphere argon and oxygen. dispersion the measured frequency range 10 -2 -10 6 Hz. It found that constant ε slightly decreases frequency, following relationship d /d(log f )∼-0.01 , loss almost at less than 1% range. This type causes absorption current which inversely proportional to time, as result aftereffect. In a dynamic random...
We systematically investigated the oxygen diffusion in both amorphous and γ-Al2O3 films using 18O as a tracer observing depth profiles by secondary ion mass spectroscopy. The coefficients for Al2O3 were two or three orders of magnitude larger than those films. activation energies about 1.2 eV considerably lower bulk α-Al2O3. These results could be explained difference structure: α-Al2O3 has dense corundum structure while defective spinel with cation site vacancies. found that prepared atomic...
Abstract A graph-theoretical formula was derived for ring currents induced in a polycyclic conjugated system by uniform magnetic field. Two advantages of this are that can be evaluated inspecting geometry system, and they attributed to the individual π-electron rings.
We developed PIN-diode-based silicon Mach-Zehnder modulators, which have side-wall-gratings in the phase-shifter sections. Such passive waveguides with gratings were fabricated using ArF immersion lithography, showed a small scattering loss of 0.4 dB/mm. extensively investigated forward-biased operation modulators by equivalent circuit analysis and measurement devices. argue carrier recombination time only plays minor role for overall performance modulator. Dependences modulation efficiency...
One of the most serious challenges facing exponential performance growth in information industry is bandwidth bottleneck interchip interconnects. We propose a photonics–electronics convergence system response to this issue. To demonstrate feasibility system, we fabricated silicon optical interposer integrated with arrayed laser diodes, spot-size converters, splitters, modulators, photodetectors, and waveguides on single substrate. Using 20 Gbps error-free data links 30 Tbps/cm2 density were...
We examine the thermal stability of a 2.6-nm-HfO2/0.3-nm-SiO2/Si structure in O2 pressure and an ultrahigh vacuum. The temperature O2-pressure dependence Si oxidation at HfO2/Si interface indicates that high-vacuum conditions are required to suppress interfacial (order 10-7 Torr 800°C). void nucleation Hf silicide (<1000 cm-2) takes place temperatures higher than 900°C, which raises issue failure when HfO2 film is used metal-insulator-semiconductor devices.
Background Current treatment with biologics has produced dramatic therapeutic effects in patients psoriasis, although these agents occasionally decrease efficacy. One of the main factors responsible for this attenuation is attributed to development antidrug antibodies (ADAs). Objectives To analyse relationship between serum drug concentrations, presence ADAs and efficacy adalimumab infliximab, determine optimal use biologics. Methods This was a 1-year prospective study dermatology...
Abstract We developed a high-speed and high-efficiency MOS-capacitor-type Si optical modulator (Si-MOD) by applying low loss resistivity of polycrystalline silicon (poly-Si) gate with large grains. To achieve poly-Si film, P-doped film based on 2 H 6 solid-phase crystallization (SPC) was developed, which showed comparable to that single-crystal Si. In addition, high-temperature annealing (HTA) after SPC effective for realizing loss. designed the optimum Si-MOD structure demonstrated very...
We studied Si waveguide-integrated metal–semiconductor–metal (MSM) and p–i–n-type Ge photodiodes (Ge-PDs), using a Si-capping layer. As for an MSM Ge-PD, the Schottky barrier height was increased up to 0.44 V by applying 8–20 nm layer, very low dark current density of approximately 0.4 nA/µm 2 achieved with high responsivity 0.8 A/W. In addition, small electrode spacing 1 µm realized high-speed photodetection 20 Gbps. 10–20 capping contact resistance between metal Ti/TiN/Al n + -Si layer...