A5068935887- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Electron and X-Ray Spectroscopy Techniques
- Electronic and Structural Properties of Oxides
- Copper Interconnects and Reliability
- Semiconductor materials and interfaces
- Advanced Memory and Neural Computing
- Advancements in Photolithography Techniques
- Ion-surface interactions and analysis
- Metal and Thin Film Mechanics
- Muon and positron interactions and applications
- Surface and Thin Film Phenomena
- Thin-Film Transistor Technologies
- Silicon and Solar Cell Technologies
- Advanced Electron Microscopy Techniques and Applications
- Force Microscopy Techniques and Applications
- Graphene research and applications
- Graphite, nuclear technology, radiation studies
- Advancements in Battery Materials
- Glass properties and applications
- Metallic Glasses and Amorphous Alloys
- X-ray Spectroscopy and Fluorescence Analysis
- Ferroelectric and Piezoelectric Materials
IBM (United States)
2009-2022
IBM Research - Thomas J. Watson Research Center
2007-2021
Essex Westford School District
2019
Samsung (United States)
2013
GlobalFoundries (United States)
2009-2013
Semiconductor Research Corporation
2011
STMicroelectronics (United States)
2011
Imec the Netherlands
2003-2004
IMEC
2002-2004
KU Leuven
2004
The high dielectric constant of insulators currently investigated as alternatives to SiO2 in metal–oxide–semiconductor structures is due their large ionic polarizability. This usually accompanied by the presence soft optical phonons. We show that long-range dipole field associated with interface excitations resulting from these modes and coupling surface plasmons, while small case SiO2, for most high-κ materials causes a reduction effective electron mobility inversion layer Si substrate....
Degradation of silicon dioxide films is shown to occur primarily near interfaces with contacting metals or semiconductors. This deterioration be accountable through two mechanisms triggered by electron heating in the oxide conduction band. These are trap creation and band-gap ionization carriers energies exceeding 2 9 eV respect bottom band, respectively. The relationship defect production subsequent degradation emphasized. dependence generated sites on electric field, thickness,...
Leakage currents introduced in the low-field, direct-tunneling regime of thin oxides during high-field stress are related to defects produced by hot-electron transport oxide layer. From these studies, it is concluded that ‘‘generation’’ neutral electron traps dominant cause this phenomenon. Other mechanisms due anode hole injection or nonuniformities shown be unrealistic for producing currents. Exposure atomic hydrogen from a remote plasma leakage similar those observed after stress,...
The thermal stability, microstructure, and electrical properties of xZrO2⋅(100−x)SiO2 (ZSO) xHfO2⋅(100−x)SiO2 (HSO) (x=15%, 25%, 50%, 75%) binary oxides were evaluated to help assess their suitability as a replacement for silicon dioxide gate dielectrics in complementary metal–oxide–semiconductor transistors. films prepared by chemical solution deposition using from mixture zirconium, hafnium, butoxyethoxides dissolved butoxyethanol. spun onto SiOxNy coated Si wafers furnace annealed at...
A combination of two complementary depth profiling techniques with sub-nm resolution, nuclear resonance and medium energy ion scattering, cross-sectional high-resolution transmission electron microscopy were used to study compositional microstructural aspects ultrathin (sub-10 nm) Al2O3 films on silicon. All three demonstrate uniform continuous stoichiometric abrupt interfaces. These film properties lead the ability making metal-oxide semiconductor devices gate dielectric equivalent...
Atomic hydrogen is found to simultaneously passivate and depassivate silicon dangling bonds at the Si(111)/SiO2 interface room temperature via reactions Pb+H0→PbH PbH+H0→Pb+H2. The passivation reaction occurs more efficiently keeping steady-state Pb density a low value of only 3–6×1011 cm−2 during atomic exposure. This can account for small fraction total number states produced by hydrogen.
The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on details measurement sequence used. By applying time-resolved measurements (capacitance-time traces charge-pumping measurements), it demonstrated that this behavior caused by fast charging discharging preexisting defects near interface bulk HfO/sub layer. Based these results, a simple defect model proposed can explain...
A detailed theoretical study of impact-ionization-related transport phenomena in ${\mathrm{SiO}}_{2}$ thin films is presented. The Boltzmann equation integrated by the Monte Carlo method using acoustic-phonon-scattering rates derived from photoinduced electron transmission experiments. It shown that these empirical scattering necessitate inclusion impact ionization at fields F>${\mathit{F}}_{\mathrm{th}}^{\mathrm{ii}}$=7 MV/cm because phonon alone can no longer stabilize energy...
Hafnium oxides and hafnium silicate films were investigated as a possible replacement for the SiO2 gate dielectric. oxide formed by reactive sputtering from single Hf target in predominantly Ar atmosphere containing small additions of oxygen. silicates made adding He-diluted silane gas Si incorporation. By changing flow, different atomic concentrations incorporated into films. Depositions performed with substrate held at temperatures 22 °C 500 °C. The chemical composition was determined...
We report on the electrical and microstructural characteristics of La- Y-based oxides grown silicon substrates by ultrahigh vacuum atomic beam deposition, in order to examine their potential as alternate gate dielectrics for Si complementary metal oxide semiconductor technology. have examined issues polycrystallinity interfacial formation these films effect leakage currents ability deposit with low thickness. observe that does not result unacceptably high currents. show significant...
Over recent years, there has been increasing research and development efforts to replace SiO/sub 2/ with high dielectric constant (high-/spl kappa/) materials such as HfO/sub 2/, HfSiO, Al/sub 2/O/sub 3/. An important transistor reliability issue is the threshold voltage stability under prolonged stressing. In these materials, observed shift stressing time conditions, thereby giving rise instabilities. this paper, we review various causes of instability: charge trapping positive bias...
Hole injection into silicon dioxide films from the polycrystalline-silicon anode or anode/oxide interface is demonstrated to unequivocally occur for any case where electrons are present in oxide conduction band and average electric field exceeds 5 MV/cm (thick-film limit) voltage drop across layer at least 8 V (thin-film limit). The hole generation directly shown be related appearance of hot with kinetic energies greater than eV near region. Monte Carlo simulations confirm that electron...
Reviews recent progress in and outlines the issues for high-K high-temperature (/spl sim/1000/spl deg/C) poly-Si CMOS processes devices also demonstrate possible solutions. Specifically, we discuss device characteristics such as gate leakage currents, flatband voltage shifts, charge trapping, channel mobility, well integration processing aspects. Results on a variety of candidates including HfO/sub 2/, Al/sub 2/O/sub 3/, 2//Al/sub ZrO/sub silicates, AlN/sub y/(O/sub x/) deposited silicon by...
It has been demonstrated that the introduction of HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> / TiN gate stacks into CMOS technologies provides means to continue with traditional device length scaling. However, as a new dielectric and metallic electrode stack FETs brings about challenges for understanding reliability physics qualification. This contribution summarizes recent advances in charge trapping defect generation stacks....
We have investigated the reaction of atomic hydrogen with defects at (100) Si/${\mathrm{SiO}}_{2}$ interface. Similar to previous results on (111) interface, we find that two paramagnetic ${\mathit{P}}_{\mathit{b}0}$ and ${\mathit{P}}_{\mathit{b}1}$, are either passivated or produced by hydrogen, depending starting density. However, possess quantitative differences in behavior. The center can be more readily than ${\mathit{P}}_{\mathit{b}1}$ it is also much harder passivate hydrogen. These...
We have characterized the structure and electrical properties of lanthanum silicate layers formed on Si(001) by reaction oxide with substrate. Postoxidation deposited films results in formation a stacked dielectric layer atop an interfacial SiO2. This combines SiO2 large permittivity silicate. Although resulting film has leakage far superior to equivalent thickness SiO2, there is evidence significant quantities ionic charge that must be eliminated before use electronic applications.
The electron dynamics for energies up to 5 eV has been studied by soft x-ray photoemission spectroscopy. Monte Carlo simulations have performed derive the energy dependence of pair-production rate using these results in combination with published data on ionization coefficient and quantum yield pair production. obtained shows a very threshold at 1.2 eV, approaching Kane [Phys. Rev. 159, 624 (1967)] higher energies. Several models found be inconsistent full set experimental we considered.
The stress-induced leakage current (SILC) in nFETs with SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /HfO /TiN dual-dielectric gate stacks metal electrodes is studied during positive-bias temperature stress at high temperatures and voltage. It shown that strong defect creation the HfO causes a linear increase of SILC time. generation found to be thermally activated an activation energy, E...
Band-gap engineering using SiGe channels to reduce the threshold voltage (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> ) in p-channel MOSFETs has enabled a simplified gate-first high-к/metal gate (HKMG) CMOS integration flow. Integrating Silicon-Germanium (cSiGe) on silicon wafers for SOC applications unique challenges like oxidation rate differential with silicon, defectivity and interface state density unoptimized state, concerns...
The stability of Al2O3 films during thermal processing will help determine their usefulness as an alternative gate dielectric for advanced complementary metal-oxide-semiconductor devices. We used medium energy ion scattering and atomic force microscopy to examine the degradation ultrathin layers under ultrahigh vacuum annealing effects low-temperature oxidation. No is observed at 900 °C, but voids appear higher temperatures. Growth interfacial SiO2 takes place low-pressure oxidation 600...
A microscopic theory for the interaction of intense laser radiation at visible and near-infrared wavelengths with free electrons in a wide-band-gap solid is presented. We calculate free-electron mediated energy transfer from field to electron-multiplication rate due band-to-band ionization as function intensity range 250 nm10 \ensuremath{\mu}m, using ${\mathrm{SiO}}_{2}$ an example. The formalism based on Monte Carlo integration Boltzmann transport equation. electron lattice described terms...
We demonstrate that a forming gas annealing temperature of 520 °C significantly improves interface state passivation for SiO2/HfO2-based/polycrystalline-Si gate stacks as compared to at 420 normally used SiO2/polycrystalline-Si stacks. also show the initial density is dependent upon interfacial SiO2 preparation, whereby chemically grown oxide has higher thermally oxide.
The bias dependence of interfacial barriers in Al2O3-based metal–oxide–semiconductor structures was studied by ballistic electron emission spectroscopy. Strong image force reductions the were observed. A conduction band offset between Al2O3 and Si 2.78 eV obtained. Electron trapping into levels that overlap gap are located near Si–Al2O3 interface led to charge densities ∼2.5×1012 cm−2.