Arindam Bala

ORCID: 0000-0002-0392-2671
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About
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Research Areas
  • 2D Materials and Applications
  • Advanced Memory and Neural Computing
  • Transition Metal Oxide Nanomaterials
  • Gas Sensing Nanomaterials and Sensors
  • Perovskite Materials and Applications
  • MXene and MAX Phase Materials
  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Advanced Sensor and Energy Harvesting Materials
  • Nanowire Synthesis and Applications
  • Analytical Chemistry and Sensors
  • ZnO doping and properties
  • Advanced biosensing and bioanalysis techniques
  • CCD and CMOS Imaging Sensors
  • Advanced Nanomaterials in Catalysis
  • Electrocatalysts for Energy Conversion
  • Thin-Film Transistor Technologies
  • Advanced Photocatalysis Techniques
  • Semiconductor Quantum Structures and Devices
  • Advanced battery technologies research
  • Electronic and Structural Properties of Oxides
  • Smart Materials for Construction
  • Olfactory and Sensory Function Studies
  • Nanoplatforms for cancer theranostics

Sungkyunkwan University
2019-2024

École Polytechnique Fédérale de Lausanne
2024

Hanyang University
2020

Korea University of Technology and Education
2020

Kyung Hee University
2020

Kookmin University
2019

Indian Institute of Technology Kharagpur
2019

Various large-area growth methods for two-dimensional transition metal dichalcogenides have been developed recently future electronic and photonic applications. However, they not yet employed synthesizing active pixel image sensors. Here, we report on an sensor array with a bilayer MoS2 film prepared via two-step method. The of is composed 2D switching transistors phototransistors. maximum photoresponsivity (Rph) the phototransistors in 8 × statistically measured as high 119.16 A W-1. With...

10.1038/s41467-021-23711-x article EN cc-by Nature Communications 2021-06-11

Abstract With an increasing demand for artificial intelligence, the emulation of human brain in neuromorphic computing has led to extraordinary result not only simulating synaptic dynamics but also reducing complex circuitry systems and algorithms. In this work, electronic device based on a synthesized MoS 2 memristor array (4 × 4) is demonstrated; can emulate behavior with simulation deep neural network (DNN) learning. film directly onto patterned bottom electrode (Pt) high crystallinity...

10.1038/s41699-022-00325-5 article EN cc-by npj 2D Materials and Applications 2022-08-04

2D transition-metal dichalcogenides (TMDs) have been successfully developed as novel ubiquitous optoelectronics owing to their excellent electrical and optical characteristics. However, active-matrix image sensors based on TMDs limitations the difficulty of fabricating large-area integrated circuitry achieving high sensitivity. Herein, a uniform, highly sensitive, robust sensor matrix with active pixels consisting nanoporous molybdenum disulfide (MoS2 ) phototransistors indium-gallium-zinc...

10.1002/adma.202210715 article EN Advanced Materials 2023-02-19

Transition-metal dichalcogenides (TMDs) in flexible technology can offer large-area scalability and high-density integration with a low power consumption. However, incorporating TMDs platform is lacking state-of-the-art data storage owing to the high process temperature of TMDs. Low-temperature growth bridge mass production reduce complexity transferring process. Here, we introduce crossbar memory array enabled by low-temperature (250 °C) plasma-assisted chemical vapor deposited MoS2...

10.1021/acsnano.3c03407 article EN ACS Nano 2023-07-07

Two-dimensional (2D) materials are favorable candidates for resistive memories in high-density nanoelectronics owing to their ultrathin scaling and controllable interfacial characteristics. However, high processing temperatures difficulties mechanical transfer intriguing challenges associated with implementation large areas crossbar architecture. A temperature may damage the electrical functionalities of bottom electrode, 2D introduce undesirable microscopic defects macroscopic...

10.1021/acsnano.2c08615 article EN ACS Nano 2023-01-06

The technological ability to detect a wide spectrum range of illuminated visible-to-NIR is substantially improved for an amorphous metal oxide semiconductor, indium gallium zinc (IGZO), without employing additional photoabsorber. fundamentally tuned morphology via structural engineering results in the creation nanopores throughout entire thickness ∼30 nm. See-through have edge functionalization with vacancies, which leads large density substates near conduction band minima and valence...

10.1021/acsnano.2c01773 article EN ACS Nano 2022-06-13

Abstract MoS 2 ‐based transparent electronics can revolutionize the state‐of‐the‐art display technology. The low‐temperature synthesis of below softening temperature inexpensive glasses is an essential requirement, although it has remained a long persisting challenge. In this study, plasma‐enhanced chemical vapor deposition utilized to grow large‐area on regular microscopic glass (area ≈27 cm ). To benefit from uniform , 7 × arrays top‐gated (≈93% at 550 nm) thin film transistors (TFTs) with...

10.1002/adfm.202205106 article EN Advanced Functional Materials 2022-08-10

Abstract Transition metal dichalcogenides (TMDs) are a promising candidate for developing advanced sensors, particularly day and night vision systems in vehicles, drones, security surveillance. While traditional rely on separate sensors different lighting conditions, TMDs can absorb light across broad‐spectrum range. In this study, dual active pixel image sensor array based bilayer WS 2 phototransistors was implemented. The film synthesized using combined process of radio‐frequency...

10.1002/inf2.12513 article EN cc-by InfoMat 2024-01-04

Abstract Field‐effect transistors‐based biosensors (bio‐FETs) have been considered an important technology for label‐free and ultrasensitive point‐of‐care diagnostics. However, practical applications using bio‐FETs are limited due to the trade‐off between sensing reliability sensitivity. This study suggests a reliable sensitive based on nanoporous molybdenum disulfide (MoS 2 ) channels encapsulated by non‐planar high‐k aluminum oxide (Al O 3 dielectric layer. Nanoporous MoS thin film is...

10.1002/adfm.202301919 article EN Advanced Functional Materials 2023-06-16

Molybdenum disulfide (MoS2), a transition metal dichalcogenide, has been demonstrated as promising substitute for noble catalysts in the hydrogen evolution reaction (HER). However, its practical application is limited by inert nature of basal planes. In this study, we developed highly active and robust MoS2 catalyst with uniform triangular nanoholes on plane via nanoscale patterning. The process successfully created edge defects Mo-terminated zigzag configuration. Notably, owing to exposure...

10.1021/acs.jpcc.2c01859 article EN The Journal of Physical Chemistry C 2022-06-01

2D materials, specifically transition metal dichalcogenides (TMDs), have gained massive attention for their potential use in high-integration memory technologies due to exceptional carrier transport, atomically thin structure, and superior physical electronic properties. High-density processors complex hardware neural architectures based on TMDs been developed shown properties, making them a competitor conventional Si technology. However, are still facing challenges with achieving high...

10.1016/j.mtelec.2023.100052 article EN cc-by Materials Today Electronics 2023-07-14

The development of energy-efficient, high-performance broadband photodetectors utilizing cost-effective amorphous metal oxide semiconductors has great potential for next-generation electronic applications. Various are used in commercially available to detect ultraviolet near-infrared lights, each requiring specific different wavelengths. utilization a semiconductor without an additional external photoabsorption layer detecting wide spectrum range from UV NIR attracted significant attention...

10.1021/acsanm.3c02973 article EN ACS Applied Nano Materials 2023-08-28

We report the enhanced photoresponse in MoS2-MoOx heterojunction thin film structures on SiO2/Si substrates to demonstrate feasibility of using them as highly responsive photodetectors with a wide spectral range from visible near-ultraviolet light. Vertically stacked were obtained through two-step chemical vapor deposition composed MoOx and subsequent sulfurization topmost region as-deposited into MoS2. The formation was revealed by transmission electron microscopy x-ray photoelectron...

10.1063/1.5094586 article EN cc-by APL Materials 2019-06-01

This study explores a class of resistive memory candidates─simple binary halides─and demonstrates their efficacy in switching between high- and low-resistive states. Herein, copper halide, particularly iodide (CuI), is investigated for its when sandwiched indium tin oxide (ITO) silver electrodes on flexible polyethylene terephthalate (PET) substrates. CuI deposited ITO-coated PET using an innovative dissolution-recrystallization technique, which deposition temperature 80 °C sufficient to...

10.1021/acsaelm.2c00614 article EN ACS Applied Electronic Materials 2022-08-08

Olfaction, a primal and effective sense, profoundly impacts our emotions instincts. This sensory system plays crucial role in detecting volatile organic compounds (VOCs) realizing the chemical environment. Animals possess superior olfactory systems compared to humans. Thus, taking inspiration from nature, artificial olfaction aims achieve similar level of excellence VOC detection. In this study, we present development an sensor utilizing nanostructured bio-field-effect transistor (bio-FET)...

10.1021/acsnano.3c07045 article EN ACS Nano 2023-10-30

Abstract The thiol‐based functionalization of multilayer MoS 2 is performed to customize its electrical and optical performance. Two types thiol‐terminated organic molecules are utilized: 4‐amino thiophenol (4ATP) for electron‐donating 4‐nitro (4NTP) electron‐withdrawing. thiol groups in these chemically bond with at the sulfur vacancies through simple solution process. 4ATP‐functionalized (4ATP–MoS ) transistors exhibit a huge enhancement current carrier concentration, whereas...

10.1002/aelm.202100644 article EN Advanced Electronic Materials 2021-08-19

The demand for renewable energy resources has led to the development of water electrolysis technology. Various transitional metal chalcogenides are investigated adopt electrolysis. Nickel telluride, from family transition chalcogenides, is attractive as a new cathode material hydrogen evolution reaction due its metallic property. However, conventional approaches mainly focus on solvothermal method and these have difficulty in controlling alignment nickel telluride. Therefore, another route...

10.1063/5.0024588 article EN cc-by APL Materials 2020-12-01

Adapting electronics to perfectly conform non-planar and rough surfaces, such as human skin, is a very challenging task which, if solved, could open up new applications in fields of high economic scientific interest ranging from health robotics, wearable electronics, human-machine interface Internet Things. The key success lies defining technology that can lead the fabrication ultra-thin devices while exploiting materials are ultimately thin, with mechanical flexibility excellent electrical...

10.48550/arxiv.2406.02442 preprint EN arXiv (Cornell University) 2024-06-04

Adapting electronics to perfectly conform nonplanar and rough surfaces, such as human skin, is a challenging task, which could open up new applications in fields of high economic scientific interest, ranging from health robotics, human-machine interface, Internet Things. The key success lies defining technology that can lead ultrathin devices, exploiting ultimately thin materials, with mechanical flexibility excellent electrical properties. Here, we report hybrid approach for the development...

10.1021/acs.nanolett.4c04930 article EN Nano Letters 2024-11-04
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