A5035455321- Semiconductor materials and devices
- Electrocatalysts for Energy Conversion
- Chalcogenide Semiconductor Thin Films
- Advanced Memory and Neural Computing
- Advanced battery technologies research
- Advanced Photocatalysis Techniques
- 2D Materials and Applications
- Ferroelectric and Negative Capacitance Devices
- Electrochemical sensors and biosensors
- MXene and MAX Phase Materials
- Copper Interconnects and Reliability
- Ferroelectric and Piezoelectric Materials
Sungkyunkwan University
2020-2025
Hanyang University
2020
Korea University of Technology and Education
2020
Kyung Hee University
2020
Engineered defect chemistry in ultrathin (≈5 nm) hafnia through substitutional cobalt (HCO) is investigated for selective glucose sensing. Thin films of HCO, grown using chemical solution deposition (CSD)-traditionally used to grow thick films-on silicon, show significant sensing activity and undergo monoclinic orthorhombic phase transformation. The presence multivalent hafnia, with oxygen vacancies proximity, selectively oxidizes minimal interference from ascorbic acid, dopamine, uric acid....
The crucial role of nanocrystalline morphology in stabilizing the ferroelectric orthorhombic (o)-phase doped-hafnia films is achieved via chemical solution deposition (CSD) by intentionally retaining carbonaceous impurities to inhibit grain growth. However, present study, large-grained (>100 nm) La-doped HfO2 (HLO) are grown directly on silicon adopting engineered water-diluted precursors with a minimum load and excellent shelf life. o-phase stabilization accomplished through...
The demand for renewable energy resources has led to the development of water electrolysis technology. Various transitional metal chalcogenides are investigated adopt electrolysis. Nickel telluride, from family transition chalcogenides, is attractive as a new cathode material hydrogen evolution reaction due its metallic property. However, conventional approaches mainly focus on solvothermal method and these have difficulty in controlling alignment nickel telluride. Therefore, another route...
Molybdenum disulfide (MoS2) has attracted considerable attention as a promising electrocatalyst for the hydrogen evolution reaction (HER). However, catalytic HER performance of MoS2 is significantly limited by few active sites and low electrical conductivity. In this study, growth multiorientated polycrystalline using plasma-enhanced chemical vapor deposition (PECVD) achieved. The synthesized sulfurizing sputtered pillar-shaped Mo film. relatively temperature during PECVD process results in...
Chemical vapor deposited tantalum pentoxide (Ta 2 O 5 ) films have been a promising dielectric material for storage capacitor in high-density DRAM with three-dimensional cell architecture, due to its higher constant than that of conventional SiO or Si 3 N 4 /SiO films. The effective Ta is influenced by the thickness interfacial lower-dielectric Si0 layer which could be native oxide thermally grown during deposition and annealing. In general, thinner has larger constant. this work, structure...