A5015859272- Semiconductor materials and devices
- Copper Interconnects and Reliability
- Electronic and Structural Properties of Oxides
- Polymer Surface Interaction Studies
- ZnO doping and properties
- Analytical Chemistry and Sensors
- Block Copolymer Self-Assembly
- Advanced Photocatalysis Techniques
- Synthesis and properties of polymers
- Catalytic Processes in Materials Science
- TiO2 Photocatalysis and Solar Cells
- Ga2O3 and related materials
- Ferroelectric and Negative Capacitance Devices
- Nanofabrication and Lithography Techniques
Dublin City University
2020-2023
Henry Morrison Flagler Museum
2023
22q11 Ireland
2020
This work identifies the critical factors when developing a polymer brush vapor phase infiltration process, while also demonstrating use of novel pyridines for area selective purposes.
In this work, we show that in order to fabricate coherent titania (TiO2) films with precise thickness control, it is critical generate a complete polymer brush monolayer. To date, demonstrations of such dense monolayer formation can be utilized for inorganic infiltration have been elusive. We describe versatile bottom-up approach covalently and rapidly (60 s processing) graft hydroxyl-terminated poly(2-vinyl pyridine) (P2VP-OH) polymers on silicon substrates. P2VP-OH varying thicknesses...
Abstract Due to its low cost and suitable band gap, silicon has been studied as a photoanode material for some time. However, result of poor stability during the oxygen evolution reaction (OER), Si still remains unsuitable any extended use. Ultra-thin titanium dioxide (TiO 2 ) films have used protective coatings are shown enhance lifetime with added solar hydrogen performance improvements through distancing oxidation away from surface improved charge transport anode. This study details...
Abstract The production of hydrogen fuel through sunlight-driven water splitting has the potential to harness and store large quantities solar energy in a clean scalable chemical state, suitable for later use range applications. Silicon (Si) possesses many required properties be used effectively as photoelectrochemical (PEC) water-splitting photoanode. However, its sensitivity corrosion during oxygen evolution reaction limits performance photoanode applications, thus requiring additional...
This work illustrates the use of polystyrene brushes for area selective deactivation against a hafnium atomic layer deposition process. The effect that thickness this brush has on its ability to block process is also shown.
The growth chemistry and electrical performance of 5 nm alumina films, fabricated via the area-selective vapor phase infiltration (VPI) trimethylaluminum into poly(2-vinylpyridine), are compared to a conventional plasma enhanced atomic layer deposition (PEALD) process. chemical properties assessed energy dispersive X-ray spectroscopy hard photoelectron measurements, while current – voltage dielectric breakdown capacitance analysis is undertaken provide information these films for first time....
Vapor phase infiltration (VPI) is a bottom-up process that involves the of polymers, often using atomic layer deposition compatible precursors. By exposing polymer to an organo-metallic precursor, area selective material formation achieved where precursor reacts with regions covered by infiltration-receptive brush. Combining receptive and rejecting polymers have capability forming complex nanopatterns could potentially allow for creation nanofeatures, offering route deposition. This work...
Fabrication of ultrathin films dielectric (with particular reference to materials with high constants) has significance in many advanced technological applications including hard protective coatings, sensors, and next-generation logic devices. Current state-of-the-art microelectronics for fabricating these thin is a combination atomic layer deposition photolithography. As feature size decreases aspect ratios increase, conformality the becomes paramount. Here, we show polymer brush...
Abstract State-of-the-art atomic layer deposition (ALD) and photoemission characterisation are applied to grow characterise cobalt nitride, a material that has applications in renewable energy semiconductor technologies. The growth process is characterised using an situ cycle-by-cycle methodology identify the main factors which underpin optimal growth. role of co-reactant dosing substrate temperature analysed detail demonstrate impact these parameters have on overall composition film....
We demonstrate a polymer brush assisted approach for the fabrication of continuous zirconium oxide (ZrO2) films over large areas with high uniformity (pin-hole free) on copper (Cu) substrates. This involves use thiol-terminated polymethyl methacrylate (PMMA-SH) as template layer selective infiltration oxynitrate (ZrN2O7). The preparation highly uniform covalently grafted monolayer Cu substrate is critical factor in fabricating metal film thickness across surface. Infiltration reliant...
The growth chemistry and electrical performance of ultrathin alumina films fabricated via a unique, area-selective polymer infiltration process are compared to conventional plasma enhanced atomic layer deposition (PEALD). chemical makeup the is assessed energy dispersive X-ray spectroscopy (EDX) hard photoelectron (HAXPES) measurements. For first time, properties metal oxide vapor phase (VPI) into poly(2-vinylpyridine) brushes evaluated. This letter demonstrates success challenges in...