A5076896161- Terahertz technology and applications
- Semiconductor materials and interfaces
- Silicon Nanostructures and Photoluminescence
- Graphene research and applications
- Semiconductor materials and devices
- Metamaterials and Metasurfaces Applications
- Spectroscopy and Laser Applications
- Photonic and Optical Devices
- Semiconductor Quantum Structures and Devices
- Topological Materials and Phenomena
- Advanced Surface Polishing Techniques
- Transition Metal Oxide Nanomaterials
- Graphene and Nanomaterials Applications
- Metal and Thin Film Mechanics
- Microwave Engineering and Waveguides
- Photonic Crystals and Applications
- Diamond and Carbon-based Materials Research
- Laser Material Processing Techniques
- Molecular Junctions and Nanostructures
- Gas Sensing Nanomaterials and Sensors
- Plasma Diagnostics and Applications
- Millimeter-Wave Propagation and Modeling
- Silicon Carbide Semiconductor Technologies
Osaka University
2021-2024
Tianjin University
2022-2023
Institute for Laser Technology
2023
This study conducted laser-induced terahertz emission spectroscopy on a VO2/Si heterojunction. Consequently, rapid estimation of the local interface potential was realized and work function VO2 obtained as 5.17–5.25 eV with increasing temperature from 320 to 380 K. Moreover, an obvious variation observed across metal–insulator phase transition VO2, doping conditions Si substrate largely influenced emission. These results imply strong relationship between amplitude electric field, which...
Abstract Advances in modern semiconductor integrated circuits have always demanded faster and more sensitive analytical methods on a large-scale wafer. The surface of wafers is fundamentally essential to start building circuits, quantitative measures the potential, defects, contamination, passivation quality, uniformity are subject inspection. present study provides new approach access those by means terahertz (THz) emission spectroscopy. Upon femtosecond laser illumination, THz radiation,...
Metal–insulator–semiconductor (MIS) is an essential structure in semiconductor devices. Owing to the increasingly complex development of devices, local information MIS, such as passivation, defects, and transient carrier dynamics, becoming more challenging characterize. Laser-excited terahertz (THz) emission spectroscopy imaging are promising for investigating properties a noncontact nondestructive manner; however, discussions speculative phenomenological. In this study, we formulate...
An all-nonmetal metamaterial (ANM) terahertz device with a silicon bowtie structure has been developed, which comparable efficiency to that of its metallic counterparts, and better compatibility modern semiconductor fabrication processes. Moreover, highly tunable ANM the same was successfully fabricated through integration flexible substrate, demonstrated large tunability over wide frequency range. Such can be used in systems for numerous applications, is promising substitute conventional...
Graphene shows great potential in developing the next generation of electronic devices. However, real implementation graphene-based devices needs to be compatible with existing silicon-based nanofabrication processes. Characterizing properties graphene/silicon interface rapidly and non-invasively is crucial for this endeavor. In study, we employ terahertz emission spectroscopy microscopy (TES/LTEM) evaluate large-scale chemical vapor deposition (CVD) monolayer graphene transferred onto...
Laser-induced Terahertz (THz) Emission Spectroscopy (TES) has demonstrated its potential utility in the realm of Metal-Oxide-Semiconductor (MOS) devices as an expedient and noncontact estimation methodology. Owing to discerning response interface electric field, amplitude THz emission peak time-domain spectroscopy encapsulates rich information regarding MOS properties, notably flat-band voltage. This paper concentrates on precise quantitative voltage within Si structure, elucidating...
Terahertz emission spectroscopy has shown a lot of advantages in estimating the electric properties semiconductor devices. In this research, we aim to observe dynamic interface potential variation from VO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> /Si heterojunction across phase transition temperature by terahertz and attempt evaluate work function film different conditions.
In this study, we focus on the terahertz radiation from a Si metal–oxide–semiconductor (MOS) structure and formulate mechanism of THz to semi-quantitatively evaluate MOS devices. A simplified model, which can effectively explain dependence emission amplitudes external bias voltages for both n- p-type structures, is derived Poisson's equation with considering effects, including flat-band voltage, hot carrier diffusion, quick recombination through interface states due photocarrier field...
Terahertz (THz) emission from the silicon (Si) surface by femtosecond laser illumination shows a lot of information, known as THz spectroscopy (TES) or laser-induced microscope (LTEM), which seems to be promising method for evaluating surface/interface properties Si-based devices, such Si metal-oxide-semiconductor (Si MOS) structure. To enlarge application and explore electronics, it is necessary build theoretical model, can accurately simply describe relationship between amplitude external...