A5103142154- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- ZnO doping and properties
- Photocathodes and Microchannel Plates
- Metal and Thin Film Mechanics
- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Nanowire Synthesis and Applications
- Gas Sensing Nanomaterials and Sensors
- Surface and Thin Film Phenomena
- Graphene research and applications
- Photonic and Optical Devices
- Acoustic Wave Resonator Technologies
- Advanced Photocatalysis Techniques
- Ion-surface interactions and analysis
- 2D Materials and Applications
- ICT in Developing Communities
- Integrated Circuits and Semiconductor Failure Analysis
- Chromatography in Natural Products
- Gamma-ray bursts and supernovae
- Phytochemicals and Medicinal Plants
- Ionic liquids properties and applications
- Chemical and Physical Properties of Materials
- Particle Detector Development and Performance
- Nuclear Physics and Applications
Forschungsverbund Berlin
2025
Paul Drude Institute for Solid State Electronics
2022-2025
Maharaja Engineering College
2024
Academy of Scientific and Innovative Research
2015-2021
CSIR National Physical Laboratory of India
2015-2021
Council of Scientific and Industrial Research
2015-2021
National Physical Laboratory
2015-2020
Advanced Materials and Devices (United States)
2017
We report the fabrication of ultraviolet photodetector on non-polar (11–20), nearly stress free, Gallium Nitride (GaN) film epitaxially grown r-plane (1–102) sapphire substrate. High crystalline leads to formation two faceted triangular islands like structures surface. The fabricated GaN exhibited a high responsivity 340 mA/W at 5 V bias room temperature which is best performance reported for a-GaN/r-sapphire films. A detectivity 1.24 × 109 Jones and noise equivalent power 2.4 10−11 WHz−1/2...
This Communication has reported a GaN-nanowall-network-based bidirectional photocurrent self-driven photodetector. The device leverages the unique properties of gallium nitride nanowall networks to modulate surface potentials, enabling generation and nature. detector enables negative under 266 nm illumination, while positive is obtained with 355 source at 0 V applied bias. Peak responsivities −2.5 1.7 A W–1 have been attained for illumination wavelengths nm, respectively, mode. Distinct...
The rising demand for optoelectronic devices to be operable in adverse environments necessitates the sensing of ultraviolet (UV) radiation. Here, a self‐driven, highly sensitive, fast responding GaN nanoflower based UV photodetector is reported. By developing unique structures, light absorption increases efficiently and maximum responsivity 10.5 A W −1 achieved at 1 V bias. reported highest among photodetectors on Si substrates commercially available Si‐based photodetectors. Under...
Recent advancements and applications of solar-blind ultraviolet photodetectors utilizing Ga 2 O 3 AlGaN materials.
The fabrication of a superior-performance ultraviolet (UV) photodetector utilizing graphene quantum dots (GQDs) as sensitization agent on ZnO-nanorod/GaN-nanotower heterostructure has been realized. GQD displays substantial impact the electrical well optical performance heterojunction UV photodetector. stimulates charge carriers in both ZnO and GaN allows energy band alignment, which is realized by spontaneous time-correlated transient response. fabricated device demonstrates an excellent...
Abstract The fabrication of unique taper-ended GaN-Nanotowers structure based highly efficient ultraviolet photodetector is demonstrated. Hexagonally stacked, single crystalline GaN nanocolumnar (nanotowers) grown on AlN buffer layer exhibits higher photocurrent generation due to high quality nanotowers morphology and increased surface/volume ratio which significantly enhances its responsivity upon exposure leading outstanding performance from the developed detection device. fabricated...
This article highlights the emerging demand for gallium nitride (GaN) semiconductor technology that offers superior optoelectronic properties making it suitable futuristic ultraviolet (UV) photodetection applications.
We correlate the oxygen chemisorption on GaN films having a structure with pits. The surface pits acted as favourable sites for due to their energetics, which resulted in significant changes electronic properties and energy band structure.
Vertically aligned GaN nanotowers (NTs) were grown on the Si (111) substrate by plasma-assisted molecular beam epitaxy to design a highly responsive ultraviolet (UV) photodetector. The UV detector fabricated bare GaN-NT array yielded sensitive and repeatable device characteristics attributed high responsivity (R), low noise equivalent power (NEP), external quantum efficiency (EQE) of 484.77 A/W, 1.76 × 10–13 W.Hz-1/2, 1.85 105 %, respectively. Furthermore, developed photodetector...
Gallium nitride (GaN) and aluminium gallium (AlGaN) are promising materials for optoelectronics because of their direct band gap high electron mobility. However, optical absorbance being limited to within the ultraviolet (UV) range constrains deployment in broadband photodetectors. Here, we combine three-dimensional (3D) epitaxial GaN AlGaN thin films with visible-spectrum active two-dimensional (2D) molybdenum disulphide (MoS2) create a 2D/3D hybrid that is across spectrum. The interfacial...
The nanoplasmonic impact of chemically synthesized Au nanoparticles (Au NPs) on the performance GaN nanostructure-based ultraviolet (UV) photodetectors is analyzed. devices with uniformly distributed NPs nanostructures (nanoislands and nanoflowers) prominently respond toward UV illumination (325 nm) in both self-powered as well photoconductive modes operation have shown fast stable time-correlated response significant enhancement parameters. A comprehensive analysis device design, laser...
We investigated curbing the defects and stress/strain in epitaxially grown crystalline GaN films on a metal–organic chemical vapor deposition-GaN/c-sapphire (MGcS) template by using plasma-assisted molecular beam epitaxy demonstrated impact of growth temperature their structural, morphological, optical properties. An in-plane compressive stress having minimum value 0.34 GPa has been vibrational spectroscopy. This alleviated was attributed to less pitted smoother surface morphology along with...
Cervical cancer is one of the common types in women. Treatment regimens include use chemotherapy but it leads to certain side effects thereby creating a need for safer therapeutic options. Ayurveda has great potential provide better treatment strategies. In this study, computational approaches have been employed investigate molecular mechanism anti-cervical Ayurvedic herbs. Initially, plants possessing activities were obtained from literature. Bioactive compounds present such evaluated...
Abstract: Nano-catalytic methodologies offer innovative approaches to convert biomass into gaseous and liquid fuels, contributing significantly sustainable energy solutions. This abstract explores key aspects of nano-catalysis in conversion, highlighting its role enhancing reaction efficiency, selectivity, process sustainability. The utilization nano-sized catalysts, such as metal nanoparticles supported on various substrates, facilitates crucial thermochemical biochemical processes. These...
Surface-engineered nanostructured nonpolar (112̅0) gallium nitride (GaN)-based high-performance ultraviolet (UV) photodetectors (PDs) have been fabricated. The surface morphology of a GaN film was modified from pyramidal shape to flat and trigonal nanorods displaying facets along different crystallographic planes. We report the ease enhancing photocurrent (5.5-fold) responsivity (6-fold) PDs using simple convenient wet chemical-etching-induced engineering. fabricated...
The growth of a wide range binary nitride films with excellent properties is reported. These are deposited by thermal laser epitaxy (TLE). If equipped CO2–laser substrate heating, TLE allows temperatures ≫ 1000 °C combined strong nitriding conditions, which established using ammonia (NH3) gas as nitrogen precursor. Films on c-plane sapphire substrates include semiconducting nitrides (BN, AlN, ScN, and YN), superconducting (TiN, VN, ZrN, NbN), magnetic (CrN GdN). transition TiN, NbN 5.7, 8.9,...
A systematic study has been performed to correlate structural, optical and electrical properties with defect states in the GaN films grown on <italic>a</italic>-plane (112̄0) sapphire substrate <italic>via</italic> rf-plasma molecular beam epitaxy.
Stress engineering is shown to have a significant influence on the defect states, surface morphology and electronic properties of GaN film grown <italic>c</italic>-sapphire.
Gallium oxide (Ga2O3) has emerged as a fourth-generation semiconductor for futuristic device requirements. Integration of Ga2O3 with industry-viable gallium nitride (GaN) can provide pathway to design efficient technology. In this paper, we Ga2O3/GaN heterointerface by using simple thermal annealing method under an oxygen-rich environment. Thermal at 850 °C 5 h results in good yield from surficial GaN which was grown on sapphire and Si substrates. Surface morphology revealed nanorod...