A5082970785- Radiation Effects in Electronics
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Quantum Dots Synthesis And Properties
- Diamond and Carbon-based Materials Research
- Low-power high-performance VLSI design
- Solar-Powered Water Purification Methods
- VLSI and Analog Circuit Testing
- Textile materials and evaluations
- Ferroelectric and Negative Capacitance Devices
- Electronic and Structural Properties of Oxides
- Interconnection Networks and Systems
- High-pressure geophysics and materials
- Metal and Thin Film Mechanics
- Chalcogenide Semiconductor Thin Films
- Nanowire Synthesis and Applications
- Near-Field Optical Microscopy
- CCD and CMOS Imaging Sensors
- Neuroscience and Neural Engineering
- Fiber-reinforced polymer composites
- Advanced biosensing and bioanalysis techniques
- Nanocluster Synthesis and Applications
- Solar Thermal and Photovoltaic Systems
- Advanced Nanomaterials in Catalysis
- Adsorption and Cooling Systems
Anhui University
2022-2025
Smart Material (Germany)
2025
State Key Laboratory of Fine Chemicals
2025
Dalian University of Technology
2025
Nanjing University
2018-2024
Guizhou University
2016-2017
Donghua University
2009-2010
Information Technology Laboratory
2009
China Academy of Space Technology
2009
Abstract Given the global challenges of water scarcity, solar‐driven vapor generation has become a renewed topic as an energy‐efficient way for clean production. Here, it is revealed that bamboo, natural hierarchical cellular material, can be excellent 3D solar vapor‐generation device by simple carbonization progress. A floating carbonized bamboo sample evaporates with extremely high rate 3.13 kg m −2 h −1 under 1 sun illumination. The evaporation achieved unique structure bamboos. inner...
This article proposes an exceptionally reliable and low-cost quadruple node upset tolerant latch ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$LC$</tex-math> </inline-formula> -QNUTL) suitable for the 65 nm CMOS technology. The innovative -QNUTL is primarily composed of three soft-error-immune (SEI) static random-access memory (SRAM) cells a triple-level C-element (CE) unit, which includes five...
Abstract It has long been an aspirational goal to create artificial evaporators that allow omnidirectional energy absorptance, adequate water supply, and fast vapor transportation, replicating the feat of plant transpiration, solve global crisis. This work reveals magnolia fruits, as a kind tree‐like living organism, can be outstanding 3D through simple carbonization process. The arterial pumping, branched diffusion, confined evaporation are achieved by “trunk,” “branches,” “leaves,”...
ABSTRACT With the advancement of nanotechnology and continuous reduction in transistor dimensions, impact double‐node‐upset (DNU) is intensifying. This paper introduces a novel low overhead DNU self‐recoverable latch (LODSL). The LODSL uses polarity design source isolation technology to reduce number sensitive nodes. does not adopt redundant design, reduces circuit area, adopts D Q transmission pathway clock gating technology, has characteristics power consumption delay. Simulation results...
The n-type doping of diamond is quite difficult, hindering the development diamond-based electronic devices for decades. In this work, we have designed a boron–nitrogen co-doping technique to realize diamonds. Basically, activation energy donors has been greatly reduced by around 50%, thanks successful synthesis related donor-like complex fine control condition. Compared sole nitrogen scheme, it found that co-incorporation boron elements beneficial lot aspects, including better crystalline...
This paper proposed a radiation-hardened memory cell (RHMC12T) by polar design for space applications. The has the following advantages: (1) it can tolerate all single-node upset and partial double-node based on combining radiation hardened technology together with reasonable layout topology; (2) comparing state-of-the-art SRAM cells, simulation results show RHMC12T lower write access time, higher wordline trip voltage, larger static noise margin, critical charge. And Monte Carlo have shown...
Abstract Rapid progress has been made in the field of fire protection during past few decades, nevertheless, development protective clothing with prolonged durability always a matter for public attention. In order to prevent or minimize skin burn damage resulting from flashover, kind thermal composite fabric, surface which is aluminized, upgraded and developed. Using UV–Vis–NIR (ultraviolet–visible–near infrared) spectrophotometer, radiation performance aluminized fabrics basalt fiber glass...
Resistive random access memory (RRAM) is viewed as the next-generation model, surpassing constraints of traditional memory. Given its non-volatile nature, which lessens static power consumption, RRAM boasts significant computing-in-memory (CIM) potential. We herein present a four-transistor/two-resistor cross-coupling structure based on RRAM. In this structure, two RRAMs are situated in opposite directions, configuration referred to reverse coding. This provides flexibility and...
In this work, sulfur addition has been employed on the boron-doped diamond growth process, and a significant regulation of boron doping behavior realized by microwave plasma chemical vapor deposition. It is interesting to find that incorporation will lead an accordant evolution efficiency, hole mobility concentration, crystal quality, surface morphology, rate. presence with appropriate dosage, for boron-to-carbon ratio only 2.5 ppm in gas phase during growth, very high concentration 1.2 ×...
In this letter, we propose a twin-operand computing method based on transforming static random-access memory (SRAM) macro that can be used for image processing. The proposed cross-coupled 10T cell structure configured into dual 4T structure, and the computational results stored in situ, thus significantly improving energy efficiency. Furthermore, unlike previous designs, computationin-memory (CIM) allows independent operands, where two operands are 4T. Not only it provide functions, but also...
In this paper, a radiation-hardened by polar design 14T (RHPD-14T) SRAM cell for space applications is proposed. Performance of the proposed RHPD-14T analyzed estimating various metrices with 65-nm complementary metal-oxide-semiconductor (CMOS) technology. The can tolerate all single-node upset and partial double-node based on combining radiation hardened technology together reasonable layout topology. Simulation results show that write access time 1.83×/1.59×/1.56×/1.12×/1.05× shorter than...
With the reduction of MOS transistor process size, ability static random access memory (SRAM) to resist single event upset plays an important role in reducing soft error rate chips. In this paper, a novel Radiation Hardened By Design Cell (RHBD-14T) using source isolation technology reduce number sensitive nodes is proposed, compared with following latest radiation-hardened cells (WE-Quatro, RHPD-12T, SAR-14T, SEA-14T, QUCCE-12T, SARP-12T, EDP-12T, QCCS, SCCS and SERSC-16T), proposed...
With technology scaling down, the charge sharing among multiple nodes has becoming significant, making Single Event Multiple Node Upsets (SEMNUs) become one of major concern in memory cell designs. In this paper, a design polarity hardening (PH_14T) is proposed for mitigating (SEMNUs). Through 3D TCAD mixed-mode simulation established that high robustness against SEU and SEMNUs PH_14T cell. Additionally, Cadence Spectre results demonstrated smaller write access time, lower power consumption,...
For low voltage CMOS static random access memory (SRAM) cells, the leakage current on bit-lines will slow down reading operation and even lead to error reading. Herein we report a 4B4C circuit composed of 8T SRAM arrays, four coupling capacitors track compensate bit-line (BLLC). The assistant are used control connection capacitors. losses caused by BLLC, improve maximum tolerable from primary bit-line. timing diagram output waveforms verify compensatory effects shows fast increases 17.8...