Jingrui Ma

ORCID: 0000-0002-3227-7835
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • Quantum Dots Synthesis And Properties
  • ZnO doping and properties
  • Chalcogenide Semiconductor Thin Films
  • Organic Light-Emitting Diodes Research
  • Semiconductor Quantum Structures and Devices
  • Photonic Crystals and Applications
  • Molecular Junctions and Nanostructures
  • Ga2O3 and related materials
  • Nanocluster Synthesis and Applications
  • Aerogels and thermal insulation
  • 2D Materials and Applications
  • Electronic and Structural Properties of Oxides
  • Semiconductor Lasers and Optical Devices
  • Hydrogels: synthesis, properties, applications
  • Silicon Nanostructures and Photoluminescence
  • Polysaccharides and Plant Cell Walls
  • Nanomaterials and Printing Technologies
  • Copper-based nanomaterials and applications
  • Ferroelectric and Piezoelectric Materials
  • Perovskite Materials and Applications
  • Thin-Film Transistor Technologies
  • Gas Sensing Nanomaterials and Sensors
  • Acoustic Wave Resonator Technologies
  • Advanced Statistical Process Monitoring
  • Carbon and Quantum Dots Applications

Southern University of Science and Technology
2020-2025

Guangzhou University of Chinese Medicine
2025

Beijing University of Technology
2025

Nanjing University
2006-2024

Nanjing General Hospital of Nanjing Military Command
2024

Huaiyin Institute of Technology
2019-2023

Nantong University
2023

Huawei Technologies (China)
2022

State Key Laboratory of Medicinal Chemical Biology
2017

Nankai University
2017

Abstract Improving the stability of inkjet‐printed quantum dot light emitting diodes (QLEDs) is critical for technology to become commercially viable. The major obstacle compromise between printability ink system and functionality carrier transport layers. Here, a ternary consisting octane, 1‐cyclohexyl‐ethanol, n ‐butyl acetate reported, which solves erosion printed underneath hole layer. A gradient vacuum post‐treatment developed accompany with pressures, helpful in forming uniform...

10.1002/adom.202101069 article EN Advanced Optical Materials 2021-09-12

Abstract Chiral‐induced spin selectivity (CISS) effect provides innovative approach to spintronics and quantum‐based devices for chiral materials. Different from the conventional ferromagnetic devices, application of CISS is potential operate under room temperature zero applied magnetic field. Low dimensional perovskites by introducing amines are beginning show significant injection, but research on still in its infancy, especially spin‐light emitting diode (spin‐LED) construction. Here,...

10.1002/adma.202305604 article EN Advanced Materials 2023-10-04

The characteristic voltages in the capacitance–voltage (C–V) curve of quantum dot light-emitting diodes (QLEDs) are usually linked to start charge injection and recombination a working device. However, it may lead misunderstanding carrier process QLEDs. This is because capacitance change only reflects an electrical response additional carriers induced by small signal loaded on applied DC voltage but does not directly correlate with total free governed voltage. In this work, we study...

10.1063/5.0221019 article EN Applied Physics Letters 2024-06-24

Exchange bias is extensively studied and widely utilized in spintronic devices, such as spin valves magnetic tunnel junctions. 2D van der Waals (vdW) magnets, with high-quality interfaces heterostructures, provide an excellent platform for investigating the exchange effect. To date, intrinsic modulation of bias, instance, via precise manipulation phases antiferromagnetic layer, yet to be fully reached, owing partly large fields traditional bulk antiferromagnets. Herein, motivated by...

10.1002/advs.202307034 article EN cc-by Advanced Science 2024-02-14

Abstract The carrier injection and charge transfer at interfaces in quantum dot light‐emitting diodes (QLEDs) are commonly evaluated based on the energy levels of different functional layers. However, actual dynamics experiments found to be very from common expectations. In this work, QLEDs using 2,2′′,2′′′‐(1,3,5‐Benzinetriyl)‐tris(1‐phenyl‐1‐ H ‐benzimidazole) (TPBi) or zinc oxide (ZnO) nanoparticles as electron transport layer (ETL) studied by impedance spectroscopy. It was first time...

10.1002/adom.202100389 article EN Advanced Optical Materials 2021-06-03

The phase structure, grain refinement, and microalloying effect of the Al-5Er-Ti master alloy were analyzed by a refining experiment, microhardness test, OM, SEM, XRD. results show that when Er/Ti atomic ratio is 2.7, Al-5Er-0.5Ti significantly better than Al-5Er, which due to Ti2Al20Er phase. There are three crystal orientations α-Al satisfy E2E model, among (620)Ti2Al20Er<260>Ti2Al20Er//(111)Al<110>Al least mismatched one. When reduced below 1.3, Ti-containing composed Al3Ti....

10.3390/met15010043 article EN cc-by Metals 2025-01-05

Abstract This study explores the application of lift‐off process for patterning quantum dot (QD) pixels using CdSe/ZnS core‐shell colloidal QDs. The evaluation influence different solvent and binder systems on effectiveness pixelation is detaily discussed. By optimizing combination, fabrication multi‐color QD patterns with pixel sizes ranging from 5 to 200 μm were demonstrated, achieving blue light conversion efficiencies exceeding 18% 25% red green pixels. It also improved uniformity,...

10.1002/jsid.2027 article EN Journal of the Society for Information Display 2025-01-22

Abstract Due to the delicious taste and remarkable bioactivities of Meretrix meretrix L., they have garnered attention in food field. However, challenge arises when attempting separate proteins from crude polysaccharides with similar polarity solubility. This paper aimed develop a novel deproteinization method L. (CPM) based on palygorskite‐chitosan composite aerogel (Pal‐CS aerogel) sieving effect. We focused influence aerogels' pore structure selective CPM. In comparison palygorskite or...

10.1002/efd2.70014 article EN cc-by eFood 2025-02-23

InP quantum dots (QDs) are the most competitive in terms of environmentally friendly QDs. However, synthesis QDs requires breakthroughs low-cost and safe phosphorus precursors such as tri(dimethylamino)phosphine [(DMA)3P]. It is found that even if oxygen completely avoided, there still oxidation state defects at core/shell interface Herein, record-breaking (DMA)3P-based red were synthesized with assist HF processing to eliminate InPOx defect improve fluorescence efficiency. The maximum...

10.1021/acsami.2c20138 article EN ACS Applied Materials & Interfaces 2022-12-27

Abstract As the electron transport layer in quantum dot light‐emitting diodes (QLEDs), ZnO suffers from excessive electrons that lead to luminescence quenching of dots (QDs) and charge‐imbalance QLEDs. Therefore, interplay between QDs requires an in‐depth understanding. In this study, DFT COSMOSL simulations are employed investigate effect sulfur atoms on ZnO. Based simulations, thiol ligands (specifically 2‐hydroxy‐1‐ethanethiol) modify nanocrystals adopted. This modification alleviates...

10.1002/smll.202307298 article EN Small 2023-11-16

Abstract Colloidal nanoplatelets (NPLs) are an emerging semiconductor nanocrystal in the display community due to their ultranarrow emission linewidth. Herein, ultrapure green emitting light‐emitting diode (LED) based on four‐monolayer CdSe/CdS core/crown NPLs is developed. By applying nonstacked nanoplates, nonradiative energy transfer film successfully suppressed. The NPL‐LEDs with pure of 521.5 nm exhibit a low turn‐on voltage 2.1 V, maximum luminance 22 400 cd m −2 , peak external...

10.1002/aelm.202000965 article EN Advanced Electronic Materials 2021-01-25

In quantum dot light-emitting diodes (QLEDs), even seemingly with interfacial exciton quenching between dots (QDs) and the electron transport layer (ETL) limiting device efficiency, internal efficiency of such QLEDs approaches 100%. Therefore, it is a puzzle that exhibit high performance although they suffer from quenching. this work, we solve by identifying cause By analyzing optical characteristics pristine encapsulated QD-ETL films, in film attributed to O2-induced charge transfer. We...

10.1039/d2nr07119c article EN Nanoscale 2023-01-01

Unlike red and green quantum dot light-emitting diodes (QLEDs), it is not clear whether a blue QLED an electron-dominated device. In this work, we identify that electron over-injected in QLEDs by impedance spectroscopy. By analyzing the capacitance–voltage characteristics of single-carrier devices, find built-in voltage electron-only device smaller than hole-only Therefore, injection more efficient hole QLEDs. To support our arguments, employ QD as fluorescent sensor to spatially investigate...

10.1063/5.0142735 article EN Applied Physics Letters 2023-03-13

We present dC / dV analysis based on the capacitance-voltage ( C – V ) measurement of quantum-dot light-emitting diodes (QLEDs), and find that some key device operating parameters (electrical optical turn-on voltage, peak capacitance, maximum efficiency) can be directly related to turning points maximum/minimum (versus voltage) curve. By study, behaviors such as low simultaneous electrical process, carrier accumulation during aging well explained. Moreover, we perform aged devices, confirm...

10.1088/0256-307x/39/12/128401 article EN Chinese Physics Letters 2022-11-04

The unbalanced carrier injection is a key factor that deteriorates the performance of blue InP quantum dot light-emitting diodes (QLEDs). Therefore, to achieve efficient QLEDs, an effective strategy balances through enhancing hole and transport in demand. In this study, we introduced ultrathin MoO3 electric dipole layer between (HTL) form pair dipole-induced built-in fields with forward resultant direction enhance facilitate balance injection. Meanwhile, p-doping effect by leads increased...

10.1063/5.0071508 article EN cc-by Applied Physics Letters 2021-11-29

Ink-jet printing is a promising deposition technology, which capable of large-area fabrication and mask-free patterning. For ink-jet-printed quantum dot (QD) light-emitting diodes (LEDs), the QDs are commonly dissolved in mixture solvent thickener ink system. However, hole transport layer could be eroded by this QD ink, leading to rough surface morphology resulting leakage carriers low device performance. This phenomenon was first directly observed using an atomic force microscope...

10.1021/acsaelm.1c00210 article EN cc-by-nc-nd ACS Applied Electronic Materials 2021-06-01

Abstract We report a 0.39‐in. quantum dot light‐emitting diode (QLED) microdisplay with full high‐definition (FHD, 1920 × 1080) resolution by integrating red top‐emitting QLED on complementary metal–oxide–semiconductor (CMOS) backplane. By optimizing the microcavity structure and constructing suitable energy‐level for devices, performance of large‐area (4.9 8.7 mm 2 ) device normal reached 13,936 cd/m brightness at 5‐V bias 13.3% external efficiency (EQE). Notably, optimal showed low turn‐on...

10.1002/jsid.1253 article EN Journal of the Society for Information Display 2023-08-29

Abstract The performance of inverted quantum-dot light-emitting diodes (QLEDs) based on solution-processed hole transport layers (HTLs) has been limited by the solvent-induced damage to quantum dot (QD) layer during spin-coating HTL. lack compatibility between HTL's solvent and QD results in an uneven surface, which negatively impacts overall device performance. In this work, we develop a novel method solve problem modifying film with 1,8-diaminooctane improve resistance for HTL’s solvent....

10.1088/1674-4926/44/9/092603 article EN Journal of Semiconductors 2023-09-01
Coming Soon ...