A5080062373- Photonic and Optical Devices
- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
- Ferroelectric and Negative Capacitance Devices
- Advanced Fiber Optic Sensors
- MXene and MAX Phase Materials
- Ga2O3 and related materials
- Advanced Photonic Communication Systems
- 2D Materials and Applications
- ZnO doping and properties
- Photonic Crystals and Applications
- Electronic and Structural Properties of Oxides
- Advanced Materials Characterization Techniques
- Semiconductor materials and interfaces
- Thin-Film Transistor Technologies
- Mechanical and Optical Resonators
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Lasers and Optical Devices
- Plasmonic and Surface Plasmon Research
- Advanced Nanomaterials in Catalysis
- Electron and X-Ray Spectroscopy Techniques
- Copper Interconnects and Reliability
- Nanowire Synthesis and Applications
- Polydiacetylene-based materials and applications
- Optical Coatings and Gratings
University of Delaware
2019-2025
Columbia University
2024
University of Shanghai for Science and Technology
2018
The University of Texas at Austin
2009
Short-range order (SRO) in semiconductor alloys, a relatively under-studied structural phenomenon which local atomic arrangements differ from those of random solid solution, is investigated molecular beam epitaxy (MBE)-grown GeSn thin films. A novel preparation technique used to pattern these films into microscale ribbons that are released the substrate for extended x-ray absorption fine structure (EXAFS) analysis. The results indicate strong SRO first shell around Sn atoms greatly denuded...
In this work, scalable fabrication of self-assembled GeSn vertical nanowires (NWs) based on rapid thermal annealing (RTA) and inductively coupled-plasma (ICP) dry etching was proposed. After treatment molecular-beam-epitaxy-grown GeSn, Sn nanodots (NDs) were formed surface the spontaneous emission from direct band enhanced by ∼5-fold. Employing NDs as template, NWs with a diameter 25 ± 6 nm density 2.8 × 109 cm-2 obtained Cl-based ICP technique. A prototype NW photodetector (PD) switching...
In this study, an interface coassembly strategy is employed to rationally synthesize a yolk-shell CuO/silicalite-1@void@mSiO2 composite consisting of silicalite-1 supported CuO nanoparticles confined in the hollow space mesoporous silica, and obtained materials were used as novel nonenzymatic biosensor for highly sensitive selective detecting glucose with excellent anti-interference ability. The synthesis CuO/silicalite-1@mSiO2 includes four steps: coating particles resorcinol-formaldehyde...
Metasurfaces, renowned for their remarkable capabilities in manipulating electromagnetic fields, have been extensively investigated the realms of optoelectronics and wireless devices. In domain biomedical sensing, utilization metasurfaces optical biosensors has garnered escalating interest over past three years. While conventional boast advantages such as label-free, real-time monitoring, high sensitivity, rapid response, integration further enhances wavefront manipulation, selectivity...
Various surface treatment methods have been previously applied on the GaN high electron mobility transistor (HEMT). In this study, effects of N2O electrical properties InAlN/GaN HEMT were studied. With treatment, ideality factor gate Schottky barrier diode (SBD) decreases from 7.70 to 1.30, and height SBD increases 0.508 eV 1.053 (~ two folds), an indication improved contact characteristic. Negative-shifted threshold voltage, decreased capacitance two-dimensional gas (2DEG) density observed....
We experimentally demonstrate a low-cost transfer process of GeSn ribbons to insulating substrates for short-wave infrared (SWIR) sensing/imaging applications. By releasing the original compressive layer nearly fully relaxed state ribbons, room-temperature spectral response photodetector is further extended 3.2 μm, which can cover entire SWIR range. Compared with as-grown reference photodetectors, fabricated ribbon photodetectors have fivefold improvement in light-to-dark current ratio,...
<title>Abstract</title> Neighborhood at atomic scale is important for the properties of advanced alloys. The preference or avoidance between neighboring species known as chemical short-range order (SRO). While SRO in metallic medium/high entropy alloys has garnered substantial attention recently, understanding semiconductor remains underdeveloped. Motivated by theoretically predicted and its dramatic impact on band structure, here we perform statistical analyses atom probe tomography data to...
In this letter, we present the electrical properties of InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistor (MISHEMT) with plasma enhanced atomic layer-deposited ZrO2 as gate dielectric. The MISHEMT an on/off current (Ion/Ioff) ratio 1.46 × 109 well a subthreshold swing 85 mV/dec was achieved. interface trap density (Dit) decreased from 1.16 1012 eV−1 cm−2 (at EC − ET = 0.26 eV) to 4.68 1011 0.40 eV), indicating good property. This study suggests feasible way for...
Germanium tin (GeSn) with a Sn content of >12% has great potential for optoelectronic devices due to its direct bandgap property. In this work, the anisotropic etching GeSn 12.5% and selective Ge over were explored by inductively couple plasma (ICP) dry obtain various microstructures. Through adding oxygen into chlorine argon adjusting process pressure, was optimized an ideal sidewall angle 89<sup>o</sup>. The is compatible both positive negative resists. By altering ICP power, recipes low...
The effect of the negative substrate bias (Vsub) on device performance InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) is studied. When Vsub decreased from 0 V to −40 V, two-dimensional electron gas (2DEG) density (n2D) under gate region decreased, while 2DEG mobility (µ2DEG) was significantly improved. Due InGaN back barrier layer and thin GaN channel (15 nm), electrons in are injected into with Vsub, leading n2D. decrease n2D caused collision...
This paper compares device performance for In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.47</sub> As MOSFETs using single HfO xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> gate dielectric with stacked dielectrics various interfacial layers between and substrate including Al O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> , HfAlO...
Herein, high‐performance back‐gate molybdenum disulfide (MoS 2 ) field‐effect transistors (FETs) with high‐quality sub‐20 nm high‐ k dielectric layers are developed for and lower‐power consumption applications. The 20 ultrathin ZrO deposited by thermal atomic layer deposition (ALD) method, where the growth temperature is varied it shows a significant impact on electrical characteristics of materials. A polydimethylsiloxane (PDMS) transfer process used to multilayer MoS flakes onto /p–Si...
Atomic short-range order (SRO) in direct-bandgap GeSn for infrared photonics has recently attracted attention due to its notable impact on band structures. However, the SRO thin films grown by different methods have hardly been compared. This paper compares of similar compositions molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) using atom probe tomography. An $\sim$15% stronger preference Sn-Sn 1$^{st}$ nearest neighbor (1NN) is observed MBE than CVD both film quantum well...
Oxide semiconductor thin-film transistors (TFTs) have shown great potential in emerging applications such as flexible displays, radio-frequency identification tags, sensors, and back-end-of-line compatible for monolithic 3D integration beyond their well-established flat-plane display technology. To meet the requirements of these appealing applications, high current drivability is essential, necessitating exploration materials science device engineering. In this work, we report first time on...
Abstract In this work, TiO 2 thin films deposited by the atomic layer deposition (ALD) method were treated with a special N O plasma surface treatment and used as gate dielectric for AlGaN/GaN metal insulator semiconductor high electron mobility transistors (MISHEMTs). The effectively reduces defects in oxide during low-temperature ALD growth. addition, it allows oxygen atoms to diffuse into device cap increase barrier height thus reduce leakage current. These exhibit constant of 54.8...
Alloying germanium with tin offers a means to modulate germanium's electronic structure, enabling greater degree of control over quantum properties such as the retention phase or spin electron wave. However, extent which presence high dopant concentrations in GeSn alters these behaviors is poorly understood. Here, we investigate role on coherence through measurements weak antilocalization (WAL) effect at temperatures between 30 mK and 10 K p-GeSn (8%) thin films, were doped series carrier...
In this work, effects of gallium incorporation on electrical and material characterization TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> films were investigated. These 15 nm Ga-doped grown by supercycle atomic layer deposition (ALD) then annealed at 500 ºC in O ambient. The levels Ga to controlled the ratio Ti cycles during ALD growth. Material characterizations show that destabilizes crystallization films, resulting amorphous even...