Bin Deng

ORCID: 0000-0002-0683-1812
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About
Contact & Profiles
Research Areas
  • Conducting polymers and applications
  • Transition Metal Oxide Nanomaterials
  • Liquid Crystal Research Advancements
  • Phase-change materials and chalcogenides
  • Advanced Memory and Neural Computing
  • Advanced Sensor and Energy Harvesting Materials
  • Supercapacitor Materials and Fabrication
  • Thin-Film Transistor Technologies

Peking University
2014-2023

Smart windows nowadays undertake the esteemed obligation of reducing energy consumption as well upgrading living experience. This project aims to devise a smart window that responds both electricity and heat, with intention achieving efficiency, privacy preservation, enhanced decorative attributes. Through implementation novel electrochromic material design, coupled optimization devices (ECDs), high-performance ECD is obtained, demonstrating coloring/bleaching time 0.53/0.16 s, transmittance...

10.1002/adma.202302685 article EN Advanced Materials 2023-06-26

To mitigate the thermal runaway issue and thereby enhance safety of electrochemical energy storage devices, designing electro-active materials with intrinsic flame-retardant insulation functions is considered an effective way. Herein, we propose innovative molecular design strategy that amalgamated cyclotriphosphonitrile derivative HCTP-BTDPBr a conjugated polymer framework to construct serving as dual function electrochromic/supercapacitor applications. Two series donor–acceptor type...

10.1021/acsapm.3c02043 article EN ACS Applied Polymer Materials 2023-10-25

A new physical conductivity model of amorphous chalcogenide is proposed, based on carriers transport theory including hopping and trap-to-band transition. numerical simulator this developed, the simulation results agree well with measurement. The ovonic switch voltage current different active area temperature are studied simulator, show a good consistence

10.1109/edssc.2014.7061203 article EN 2014-06-01

The impact of junction formed by the electrode and bulk in phase change memory to conduction at amorphous high resistance state is studied this paper. Analytical model deduced from basic physical equation elucidates that current changes barrier limited when applied voltage increases. currents are highly consistent with measurement data different temperatures. It also found becomes non-negligible radius bottom scaled down 20 nm.

10.1109/edssc.2014.7061204 article EN 2014-06-01
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