Prakash Uprety

ORCID: 0000-0002-0700-2303
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Research Areas
  • Chalcogenide Semiconductor Thin Films
  • ZnO doping and properties
  • Quantum Dots Synthesis And Properties
  • Perovskite Materials and Applications
  • Thin-Film Transistor Technologies
  • Transition Metal Oxide Nanomaterials
  • Multiferroics and related materials
  • Gold and Silver Nanoparticles Synthesis and Applications
  • Glass properties and applications
  • Copper-based nanomaterials and applications
  • Electronic and Structural Properties of Oxides
  • Solid-state spectroscopy and crystallography
  • Gas Sensing Nanomaterials and Sensors
  • Magnetic and transport properties of perovskites and related materials
  • Semiconductor Quantum Structures and Devices
  • Silicon and Solar Cell Technologies
  • Solid State Laser Technologies
  • Advanced Semiconductor Detectors and Materials
  • Plasmonic and Surface Plasmon Research
  • Metamaterials and Metasurfaces Applications
  • Conducting polymers and applications
  • Semiconductor materials and interfaces
  • Nanocluster Synthesis and Applications
  • Optical Polarization and Ellipsometry
  • Optical and Acousto-Optic Technologies

University of Toledo
2014-2024

Swiss Federal Laboratories for Materials Science and Technology
2014

Bowling Green State University
2014

ETH Zurich
2014

The ability of metal nanoparticles to concentrate light via the plasmon resonance represents a unique opportunity for funneling solar energy in photovoltaic devices. absorption enhancement plasmonic cells is predicted be particularly prominent when size features falls below 20 nm, causing strong confinement radiation modes. Unfortunately, ultrashort lifetime such near-field makes harvesting small-diameter challenging task. Here, we develop that harness emission 5 nm Au by transferring band...

10.1021/nn505375n article EN ACS Nano 2014-11-17

Colloidal semiconductor nanocrystals (NCs) are emerging as promising infrared-emitting materials, which exhibit spectrally tunable fluorescence, and offer the ease of thin-film solution processing. Presently, an important challenge facing development nanocrystal infrared emitters concerns fact that both emission quantum yield stability colloidal nanoparticles become compromised when nanoparticle solutions processed into solids. Here, we address this issue by developing assembly technique...

10.1021/cm501739h article EN Chemistry of Materials 2014-06-24

Abstract High efficiency, broad bandwidth, and robust angular tolerance are key considerations in photonic device design. Here, a few‐layer, asymmetric light transmitting metasurface that simultaneously satisfies all the above requirements is reported. The consists of coupled metallic sheets. It has measured transmission efficiency 80%, extinction ratio 13.8 dB around 1.5 μm, full width half maximum bandwidth 1.7 μm. as thin 290 nm, good performance against angle incidence constituent...

10.1002/lpor.201500328 article EN Laser & Photonics Review 2016-08-11

Abstract Electrical transport parameters for active layers in silicon (Si) wafer solar cells are determined from free carrier optical absorption using non-contacting Hall effect measurements. Majority [carrier concentration ( N ), mobility μ and conductivity effective mass m* )] both the n-type emitter p-type bulk Si of an industrially produced aluminum back surface field (Al-BSF) photovoltaic device. From measurements under 0 ±1.48 T external magnetic fields nominally “dark” conditions,...

10.1038/s41598-019-55173-z article EN cc-by Scientific Reports 2019-12-12

This work reports on the effect of ultraviolet (UV) laser irradiation structural, electrical, and optical properties nickel oxide (NiOx) thin films, deposited by reactive sputtering in an oxygen containing atmosphere. It was found that conduction type can be changed from p-type to n-type resistivity decreased as number pulses is increased then increases again. The as-deposited films are polycrystalline, while renders amorphous. observed transition O-rich NiOx Ni-rich laser-irradiated...

10.1002/pssa.201600414 article EN physica status solidi (a) 2016-11-02

Electrical transport properties [carrier concentration (N), mobility (μ), effective mass (m*), resistivity (ρ), and scattering time (τ)] are deduced from free carrier optical absorption using noncontacting Hall effect measurements. Here, we use this technique to determine N, μ, m* for semiconductor absorber materials photovoltaic (PV) devices. As case studies, PV component including thin-film methylammonium lead iodide, cadmium telluride, copper indium diselenide as well silicon wafers...

10.1109/jphotov.2018.2869540 article EN publisher-specific-oa IEEE Journal of Photovoltaics 2018-09-24

Thin films of transparent conducting fluorine doped tin oxide (SnO2:F) on soda lime glass and stainless steel substrates are prepared by spray pyrolysis at low temperature ≤250 °C. Optical properties in the form complex dielectric function (ϵ = ϵ1 + iϵ2) spectra obtained using spectroscopic ellipsometry from 0.035 to 5.89 eV for SnO2:F 0.75 steel. The absorption coefficient (α) extracted ϵ film eV. Direct band gaps thin determined be 3.45 ± 0.01 3.60 eV, respectively. Infrared extended...

10.1002/pssb.201700102 article EN physica status solidi (b) 2017-06-13

Borosilicate glass is of significant interest and utility to for a variety applications, often its robust ability withstand thermal stresses resulting from low coefficient expansion. Here, ellipsometric spectra borosilicate the millimeter wavelength range (terahertz) ultraviolet are collected rotating compensator configuration ellipsometers. Specifically, three instruments each measuring separate spectral (0.4–4.1 meV; 0.035–0.75 eV; 0.75–5.89 eV) modeled simultaneously. Continuous...

10.1116/1.4997898 article EN Surface Science Spectra 2017-12-01

The anisotropic optical properties of single crystal SrLaAlO 4 are investigated using spectroscopic ellipsometry over the range from 0.74 to 5.90 eV. Divided spectral analysis ellipsometric and Mueller matrix spectra used obtain sample structural parameters (surface roughness thickness void fraction). ordinary extra‐ordinary in form complex dielectric function, ϵ = 1 + i 2 (or index refraction, N n k ), extracted same analysis. observed birefringence is ∼ 0.025 transparent range. An upper...

10.1002/pssb.201600286 article EN physica status solidi (b) 2016-08-17

Electrical transport properties (resistivity, scattering time, carrier concentration, mobility, effective mass) can be deduced from the Drude model for free optical absorption. Optical response of materials may include simultaneous contributions carriers, phonon modes, and electronic transitions, however. Improved sensitivity to absorption electrical is obtained through use long wavelength extended spectroscopic ellipsometry in infrared (IR) millimeter (THz) ranges. Non-contacting...

10.1109/pvsc.2017.8366732 article EN 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) 2017-06-01

An in-depth analysis of the optical properties epitaxial LaMnO3 films grown on SrTiO3 and LaAlO3 single crystal substrates is performed by spectroscopic ellipsometry to determine complex dielectric function (ε = ε1 + iε2) spectra from 0.12 5.89 eV. Density Functional Theory (DFT), many body perturbation theory within G0W0 Bethe-Salpeter Equation (BSE) approximations, are also employed generate theoretical in ε. Critical point energies (CPs) 0.91 1.49 eV interpreted as energy separation...

10.2139/ssrn.4696665 preprint EN 2024-01-01

An in-depth analysis of the optical properties epitaxial (0 0 1) oriented LaMnO3 films grown on SrTiO3 and LaAlO3 single crystal substrates is performed by spectroscopic ellipsometry to determine complex dielectric function (ε = ε1 + iε2) spectra from 0.12 5.89 eV. Density Functional Theory many body perturbation theory within G0W0 Bethe-Salpeter Equation approximations, are also employed generate theoretical in ε. Critical point energies (CPs) 0.91 1.49 eV interpreted as energy separation...

10.1016/j.apsusc.2024.160682 article EN cc-by-nc Applied Surface Science 2024-07-07

Optical characterization and simulations have been applied to study formamidinium + cesium lead triiodide (FA1 <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">X</sub> CsXPbI xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) perovskite thin films solar cells. Near infrared ultraviolet complex index of refraction (N = n ik) spectra varying cesium-to-formamidinium ratios in solution processed extracted. Critical point transitions the absorption...

10.1109/pvsc.2018.8547384 article EN 2018-06-01

A parametric optical model is developed for use in analyzing spectroscopic ellipsometry (SE) measurements of CdTe and CdSe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-y</sub> Te xmlns:xlink="http://www.w3.org/1999/xlink">y</sub> alloy films. Through fitting to a series CdCl2 treated alloys spanning the full range compositions, database describing response CdSe1-yTey as function y compiled. More specifically, spectral features are...

10.1109/pvsc.2018.8547659 article EN 2018-06-01

Non-contacting optical probes based on spectroscopic ellipsometry or reflectance measurements are used to predict photovoltaic (PV) device performance and diagnose electronic losses. Optical modeling of aluminum back surface field (Al-BSF) silicon, thin film cadmium telluride (CdTe), hybrid organic inorganic lead halide perovskite (FA<sub>1−x</sub>Cs<sub>x</sub>PbI<sub>3</sub>) solar cell technologies reviewed. Using the near infrared (IR) ultraviolet (UV) properties PV component materials...

10.1117/12.2550866 article EN 2020-03-03

A low bandgap mixed tin-lead (Sn-Pb) halide perovskite based thin film solar cell is a multilayer stack consisting of indium tin oxide (ITO) as the transparent front electric contact, poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) hole transport layer, (FASnI3)0.6(MAPbI3)0.4 absorber fullerene (C60) electron bathocuproine (BCP) blocking and Ag back contact. Determination carrier concentration (N) these individual layers in structure using direct electrical measurements...

10.1109/pvsc48317.2022.9938573 article EN 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC) 2022-06-05
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