A5047825338- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Silicon Nanostructures and Photoluminescence
- ZnO doping and properties
- Electronic and Structural Properties of Oxides
- Integrated Circuits and Semiconductor Failure Analysis
- Nanowire Synthesis and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Chalcogenide Semiconductor Thin Films
- Gas Sensing Nanomaterials and Sensors
- Catalytic Processes in Materials Science
- Perovskite Materials and Applications
- Graphene research and applications
- Quantum Dots Synthesis And Properties
- Electron and X-Ray Spectroscopy Techniques
- Transition Metal Oxide Nanomaterials
- Ferroelectric and Negative Capacitance Devices
- Surface and Thin Film Phenomena
- Glass properties and applications
- MXene and MAX Phase Materials
- Graphene and Nanomaterials Applications
- Metal and Thin Film Mechanics
- Electrocatalysts for Energy Conversion
Eindhoven University of Technology
2016-2025
Materials Processing (United States)
2023
Plasma (Macedonia)
2013-2020
Helmholtz-Zentrum Berlin für Materialien und Energie
2018-2020
Fraunhofer Institute for Solar Energy Systems
2020
Holst Centre (Netherlands)
2017-2020
Eurofins (Netherlands)
2020
University of Toledo
2017
Oxford Instruments (United Kingdom)
2017
To further increase the conversion efficiency of crystalline silicon (c-Si) solar cells, it is vital to reduce recombination losses associated with contacts. Therefore, a contact structure that simultaneously passivates c-Si surface while selectively extracting only one type charge carrier (i.e., either electrons or holes) desired. Realizing such passivating contacts in cells has become an important research objective, and overview classification work date on this topic presented here. Using...
25.5% efficiency is demonstrated for monolithic perovskite/silicon tandem solar cell using textured foil and the impact of texture position on performance energy yield simulated.
We present a highly efficient monolithic perovskite/silicon tandem solar cell and analyze the performance as function of photocurrent mismatch with important implications for future device energy yield optimizations.
Abstract A highly transparent passivating contact (TPC) as front for crystalline silicon (c-Si) solar cells could in principle combine high conductivity, excellent surface passivation and optical transparency. However, the simultaneous optimization of these features remains challenging. Here, we present a TPC consisting silicon-oxide tunnel layer followed by two layers hydrogenated nanocrystalline carbide (nc-SiC:H(n)) deposited at different temperatures sputtered indium tin oxide (ITO)...
Abstract Solar cells rely on the efficient generation of electrons and holes subsequent collection these photoexcited charge carriers at spatially separated electrodes. High wafer quality is now commonplace for crystalline silicon ( c ‐Si) based solar cells, meaning that cell's efficiency potential largely dictated by effectiveness its carrier‐selective contacts. The majority contacts currently employed in industrial production are highly doped‐silicon, which can introduce negative...
Molybdenum oxide (MoOx) films have been deposited by atomic layer deposition using bis(tert-butylimido)-bis(dimethylamido)molybdenum and oxygen plasma, within a temperature range of 50–350 °C. Amorphous film growth was observed between 50 200 °C at per cycle (GPC) around 0.80 Å. For temperatures 250 higher, transition to polycrystalline observed, accompanied an increase in GPC up 1.88 all the O/Mo ratio found be just below three, indicating were slightly substoichiometric with respect MoO3...
The preparation of high‐quality molybdenum oxide (MoO x ) is demonstrated by plasma‐enhanced atomic layer deposition (ALD) at substrate temperatures down to 50 °C. films are amorphous, slightly substoichiometric with respect MoO 3 , and free other elements apart from hydrogen (&11 at%). have a high transparency in the visible region their compatibility a‐Si:H passivation schemes demonstrated. It discussed that these aspects, conjunction low processing temperature ability deposit very...
The interplay between hydrogenation and passivation of poly-Si/SiOx contacts to n-type Si wafers is studied using atomic layer deposited Al2O3 anneals in forming gas nitrogen. stacks are prepared by thermal oxidation followed crystallization a-Si:H films plasma-enhanced chemical vapor deposition. Implied open-circuit voltages as high 710 mV achieved for p-type after hydrogenation. Correlating minority carrier lifetime data secondary ion mass spectrometry profiles reveals that the main...
Area-selective atomic layer deposition (ALD) of ZnO was achieved on SiO2 seed patterns H-terminated silicon substrates, using diethylzinc (DEZ) as the zinc precursor and H2O coreactant. The selectivity ALD process studied in situ spectroscopic ellipsometry scanning electron microscopy, revealing improved for increasing temperatures from 100 to 300 °C. also investigated transmission microscopy energy-dispersive X-ray spectroscopy. Density functional theory (DFT) calculations were performed...
Hydrogen-doped indium oxide (In2O3:H) has recently emerged as an enabling transparent conductive for solar cells, in particular silicon heterojunction cells because its high electron mobility (>100 cm(2)/(V s)) allows a simultaneously electrical conductivity and optical transparency. Here, we report on high-quality In2O3:H prepared by low-temperature atomic layer deposition (ALD) process present insights into the doping mechanism scattering processes that limit carrier such films. The...
Passivating contacts based on metal oxides have proven to enable high energy conversion efficiencies for crystalline silicon (c-Si) solar cells at low processing complexity. In this work, the potential of atomic-layer deposited (ALD) Nb2O5 as novel electron-selective passivating contact is explored in terms recombination parameter J0 and resistivity ρc. It shown that after forming gas annealing, ALD can provide adequate surface passivation with values down 25–30 fA/cm2. On HF-treated c-Si...
We present a nano-patterned dielectric coating for crystalline Si solar cells that combines excellent anti-reflection and passivation properties. The comprises an array of TiO2 nanocylinders placed on top ultra-thin Al2O3 layer flat Si(100) wafer. antireflection effect stems from the preferential forward scattering light through leaky Mie resonances in nanocylinders. provides surface. experimentally demonstrate ultralow surface recombination with carrier lifetimes above 4 ms, combined...
Despite the existence of several highly effective and well-characterized passivating materials for crystalline silicon surfaces, topic surface passivation investigation new remain considerable interest photovoltaics research. However, question whether under what circumstances a particular material will provide remains difficult to answer. In this work, we an overview recent insights relating question, drawing from our own work on novel including MoOx, Nb2O5, TiOx, ZnO, POx, illustrated with...
Passivating and carrier selective contacts formed by metal oxide induced junctions are promising candidates to improve the efficiency of silicon solar cell. Important aspects for optimization such addressed means numerical device simulations. Experimentally, atomic layer deposited (ALD) molybdenum (MoOx) films tested their ability form a hole-selective contact. To this end, c-Si band bending, external implied Voc crystallinity analyzed. It is shown that properties p/n-junction strongly...
Doped polycrystalline silicon (poly-Si), when coupled with a thin SiO2 interlayer, is of large interest for crystalline (c-Si) solar cells due to its outstanding passivating contact properties. To reach high levels surface passivation, it pivotal hydrogenate the poly-Si and underlying c-Si/SiO2 interface. This can be done by capping hydrogen-containing dielectric layer such as Al2O3 or SiNx, followed thermal anneal. On basis recent research, this work addresses several aspects hydrogenation...
Conductive and semiconductive oxides constitute a class of materials which the electrical conductivity optical transparency can be modulated through material design (e.g., doping alloying) external influences gating in transistor or gas exposure sensor). These (semi)conductive oxides, often categorized as amorphous oxide semiconductors transparent conductive have, therefore, been commonplace in, for example, solar cells displays, well an increasing variety other applications including...
The preparation of high‐quality In 2 O 3 :H, as transparent conductive oxide (TCO), is demonstrated at low temperatures. Amorphous :H films were deposited by atomic layer deposition 100 °C, after which they underwent solid phase crystallization a short anneal 200 °C. TEM analysis has shown that this approach can yield with lateral grain size few hundred nm, resulting in electron mobility values high 138 cm /V s device‐relevant carrier density 1.8 × 10 20 –3 . Due to the extremely mobility,...
We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such cells usually feature sputtered transparent electrodes, the of which may damage layers underneath. Using atomic layer deposition, we insert thin protective films between and contacts investigate their effect on device operation. find that a 20-nm-thick suffices preserve, unchanged, beneath. Insertion such atomic-layer-deposited yields...
Surface passivation is essential for high-efficiency crystalline silicon (c-Si) solar cells. Despite the common use of transparent conductive oxides (TCOs) in field cells, obtaining surface by TCOs has thus far proven to be particularly challenging. In this work, we demonstrate outstanding c-Si surfaces highly ZnO films prepared atomic layer deposition. Effective recombination velocities as low 4.8 cm/s and 11 are obtained on 3 Ω cm n- p-type (100) c-Si, respectively. The high levels...
In this article, we explore magnesium oxide (MgO) as electron-selective contact layer in silicon heterojunction solar cells. We report on the successful deposition of MgO layers by atomic at low temperatures ≤200 °C using bis(ethylcyclopentadienyl)magnesium (Mg(CpEt) <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) and H O precursors. Depositions were carried out bare crystalline (c-Si) wafers c-Si with an intrinsic amorphous...
Stacks consisting of an ultrathin SiO2 coated with atomic-layer deposited (ALD) zinc oxide (ZnO) and aluminum (Al2O3) have been shown to yield state-of-the-art passivation n-type crystalline silicon surfaces. The distinguishing aspect this novel stack is the very conductive nature passivating ZnO layer. In work, it demonstrated that such a can provide additional functionalities relevant for solar cells. Specifically, transparent stacks passivate textured n+-diffused surfaces they form Ohmic...
Monolithic integration of silicon-based electronics and photonics could open the door toward many opportunities including on-chip optical data communication large-scale application light-based sensing devices in healthcare automotive; by some, it is considered Holy Grail silicon photonics. The monolithic is, however, severely hampered inability Si to efficiently emit light. Recently, important progress has been made demonstration efficient light emission from direct-bandgap hexagonal SiGe...
In silicon heterojunction solar cells, the main opportunities for efficiency gain lie in improvements of front-contact layers. Therefore, effect transparent conductive oxides (TCOs) on a-Si:H passivation performance has been investigated Al-doped zinc oxide (ZnO:Al) layers made by atomic layer deposition (ALD). It is shown that ALD process, as opposed to sputtering, does not impair chemical passivation. However, field-effect reduced ZnO:Al. The resulting decrease low injection-level lifetime...
In this work, atomic layer deposition (ALD) has been employed to prepare high-mobility H-doped zinc oxide (ZnO:H) films. Hydrogen doping was achieved by interleaving the ZnO ALD cycles with H2 plasma treatments. It shown that offers key advantages over traditional Al and B, enables a high mobility value up 47 cm2/Vs resistivity of 1.8 mΩcm. By proper choice regime where there is strong competition between film growth etching treatment, strongly enhanced grain size hence increased carrier...
Using an inductively coupled plasma, hydrogenated amorphous silicon (a-Si:H) films have been prepared at very low temperatures (&lt;50 °C) to provide crystalline (c-Si) surface passivation. Despite the limited nanostructural quality of a-Si:H bulk, a surprisingly high minority carrier lifetime ∼4 ms is demonstrated after rapid thermal annealing treatment. Besides excellent level passivation, main advantage low-temperature approach facile suppression undesired epitaxial growth. The...