A5066577018- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and interfaces
Forschungszentrum Jülich
2018-2021
RWTH Aachen University
2019-2021
Abstract A highly transparent passivating contact (TPC) as front for crystalline silicon (c-Si) solar cells could in principle combine high conductivity, excellent surface passivation and optical transparency. However, the simultaneous optimization of these features remains challenging. Here, we present a TPC consisting silicon-oxide tunnel layer followed by two layers hydrogenated nanocrystalline carbide (nc-SiC:H(n)) deposited at different temperatures sputtered indium tin oxide (ITO)...
Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), tunnel oxide (SiO2) stack are an alternative to amorphous silicon-based for the front side of heterojunction solar cells. In systematic study μc-SiC:H(n)/SiO2/c-Si contact, we investigated selected wet-chemical oxidation methods formation ultrathin SiO2, in order passivate surface while ensuring low contact resistivity. By tuning SiO2 properties, implied open-circuit voltages 714 mV...
A highly transparent front contact layer system for crystalline silicon (c-Si) solar cells is investigated and optimized. This consists of a wet-chemically grown tunnel oxide, hydrogenated microcrystalline carbide [SiO2/μc-SiC:H(n)] prepared by hot-wire chemical vapor deposition (HWCVD), sputter-deposited indium doped tin oxide. Because the exclusive use very high bandgap materials, this more light than state art amorphous (a-Si:H) or polycrystalline contacts. By investigating electrical...
Abstract N‐type microcrystalline silicon carbide (μc‐SiC:H(n)) is a wide bandgap material that very promising for the use on front side of crystalline (c‐Si) solar cells. It offers high optical transparency and suitable refractive index reduces parasitic absorption reflection losses, respectively. In this work, we investigate potential hot wire chemical vapor deposition (HWCVD)–grown μc‐SiC:H(n) c‐Si cells with interdigitated back contacts (IBC). We demonstrate outstanding passivation...
We present a new transparent passivated contact concept utilizing microcrystalline silicon carbide and an ultrathin tunnel oxide (μc-SiC:H(n)/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) for the front side of heterojunction solar cells. investigated different oxidation agents in combination with selected deposition conditions μc-SiC:H(n) to find ideal parameters high passivation quality conductivity. Implied open-circuit...
Tunnel oxide passivated contact solar cells have evolved into one of the most promising silicon cell concepts past decade, achieving a record efficiency 25%. We study transport mechanisms realistic tunnel structures, as encountered in passivating (TOPCon) cells. Tunneling is affected by various factors, including layer thickness, hydrogen passivation, and oxygen vacancies. When thickness increases, faster decline conductivity obtained computationally than that observed experimentally. Direct...
Herein, the effectiveness of post‐deposition catalytic‐doping (cat‐doping) on various doped silicon alloys, i.e., microcrystalline (μc‐Si:H), nanocrystalline oxide (nc‐SiO x :H), and carbide (μc‐SiC:H), for use in heterojunction solar cells is investigated. Phosphorous (P) profiles by secondary ion mass spectrometry (SIMS) reveal P distribution its difference these three alloy films. Conductivity effective charge carrier lifetime different samples are found to increase extents after...