A5013559735- Diamond and Carbon-based Materials Research
- Semiconductor materials and devices
- Metal and Thin Film Mechanics
- Microbial Natural Products and Biosynthesis
- Advanced Surface Polishing Techniques
- Advancements in Semiconductor Devices and Circuit Design
- Cancer therapeutics and mechanisms
- Carbohydrate Chemistry and Synthesis
- Chemical Synthesis and Analysis
- Synthesis and Biological Evaluation
- Electronic and Structural Properties of Oxides
- Force Microscopy Techniques and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Ion-surface interactions and analysis
- Bioactive Compounds and Antitumor Agents
- Synthesis and Biological Activity
- Ga2O3 and related materials
- Magneto-Optical Properties and Applications
- Peptidase Inhibition and Analysis
- Mycobacterium research and diagnosis
- Advanced Materials Characterization Techniques
- Antibiotics Pharmacokinetics and Efficacy
- Antibiotic Resistance in Bacteria
- Biopolymer Synthesis and Applications
- Synthesis and biological activity
Keio University
1984-2025
National Institute of Advanced Industrial Science and Technology
2015-2024
Midorigaoka Hospital
2023
Kyushu University
2021
Université Grenoble Alpes
2017-2020
Centre National de la Recherche Scientifique
2017-2020
Institut Néel
2017-2020
Institut polytechnique de Grenoble
2018
Conductive Composites (United States)
2018
Ubiquitous Energy (United States)
2013
SUMMARY: Cultural conditions for forming and stabilizing protoplasts of Streptomyces griseus S. venezuelae were studied by reference to the number formed, leakage from reversion rate. Effective formation stabilization was accomplished using a hypertonic medium containing 10 mm-MgCl2 25 mm-CaCl2. Electron microscopy showed that griseus, when prepared in above medium, formed vesicles on cytoplasmic membrane or out protoplasts, but with 3 mm-CaCl2 they provided few such vesicles. The normal...
Diamond has always been adored as a jewel. Even more fascinating is its outstanding physical properties; it the hardest material known in world with highest thermal conductivity. Meanwhile, when we turn to electrical properties, diamond rather featureless insulator. However, boron doping, becomes p-type semiconductor, acting charge acceptor. Therefore recent news of superconductivity heavily boron-doped synthesized by high pressure sintering was received considerable surprise. Opening up new...
A diamond metal-semiconductor field-effect transistor (MESFET) with a Pt Schottky gate was fabricated. The MESFET exhibited clear saturation and pinchoff characteristics. drain current of the operated at 300 °C 20 times higher than that room temperature due to activation acceptors. breakdown voltage highly dependent on gate-drain length reached 1.5 kV 30 μm, which is highest reported for FET.
Vertical-structured diamond Schottky barrier diodes with a thick field plate have been developed. The VSBD 30 µm square (8.8×10-6 cm2) electrode shows specific on-resistance and blocking voltage, such as 29.3 mΩ cm2 (3.3 kΩ) 842 V at room temperature, respectively, however, the lower constant voltage 9.4 (1 840 V, realized 250 °C. As result, Baliga's figure of merit (BVBD2/RonS) is improved from 24.1 to 75.3 MW/cm2. This value best in present. 1,000 (9.7×10-3 high forward current low...
Surface-functionalized β-Ga2O3 and diamond substrates were directly bonded by annealing at 250 °C in atmospheric air. Prior to bonding, the surfaces OH-terminated oxygen plasma irradiation H2SO4/H2O2 cleaning, respectively. After contacting with each other, direct bonding was formed a thermal dehydration reaction. The annealed specimen had shear strength of 14 MPa because generation chemical bonds between surfaces. analysis interface structures revealed that atomically without nano-voids,...
A fundamental framework for construction of a quantum field theory open systems is built on two basic concepts; the coarse graining realized by projection operator method damping theory, and thermal state, concept in thermo dynamics.
The current-voltage characteristics of non-punch-through-type diamond Schottky barrier diodes (SBDs) are analyzed by using thermionic and thermionic-field emission (TFE) models. Diamond SBD with defects such as nonepitaxial crystallites (NCs) shows shunt path conductance both under forward reverse bias conditions. However, without NCs a low leakage current density less than 1×10−11A∕cm2, which is more 12 orders magnitude smaller the density. From fitting NCs, TFE dominates when electric...
Diamond metal-oxide-semiconductor field-effect transistors (FETs) have been fabricated on IIa-type large-grain diamond substrates with a (110) preferential surface. The drain current and cutoff frequency are −790mA∕mm 45GHz, respectively, which higher than those of single-crystal FETs (001) homoepitaxial films. hole carrier density the accumulation layer depends orientation hydrogen-terminated surface, for preferentially oriented films show 50%–70% lower sheet resistance substrate. We...
We fabricated so-called mosaic single-crystal-diamond (SCD) wafers that consist of SCD sub-crystals with identical characteristics. These sub-crystal clones were obtained from a seed crystal by repeating the lift-off process using ion implantation. found junctions between cloned smoothly covered and no abnormal growth occurred along junctions. Therefore, can be applied to production freestanding same size. Based on these findings, we have succeeded in synthesizing 1 in. diamond wafers.