Tao Chen

ORCID: 0000-0002-0853-8716
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • Advanced Thermoelectric Materials and Devices
  • Thermal Radiation and Cooling Technologies
  • Thermal properties of materials
  • Chalcogenide Semiconductor Thin Films
  • Heat Transfer and Optimization
  • Advanced Thermodynamics and Statistical Mechanics
  • Atomic and Molecular Physics
  • Advanced Chemical Physics Studies
  • 2D Materials and Applications
  • Heat Transfer and Boiling Studies
  • Thermography and Photoacoustic Techniques
  • Quantum Dots Synthesis And Properties
  • Advanced Semiconductor Detectors and Materials
  • Heat Transfer Mechanisms
  • MXene and MAX Phase Materials
  • Environmental Policies and Emissions
  • Photovoltaic Systems and Sustainability
  • Plant and fungal interactions
  • Reinforcement Learning in Robotics
  • Complex Network Analysis Techniques
  • Mass Spectrometry Techniques and Applications
  • Spectroscopy and Laser Applications
  • Laser-induced spectroscopy and plasma
  • Spacecraft and Cryogenic Technologies
  • Phase Change Materials Research

Chinese Academy of Sciences
2017-2024

University of Science and Technology of China
2006-2024

Changchun University of Chinese Medicine
2024

Institute of Solid State Physics
2020-2024

Ningbo Institute of Industrial Technology
2024

CAS Key Laboratory of Urban Pollutant Conversion
2018-2020

Hunan Institute of Technology
2016

South China Normal University
2012

Hubei Normal University
2010

As an eco-friendly thermoelectric material, Cu2SnSe3 has recently drawn much attention. However, its high electrical resistivity ρ and low thermopower S prohibit performance. Herein, we show that a widened band gap the increased density of states are achieved via alloying, resulting in 1.6 times enhancement (from 170 to 277 μV/K). Moreover, doping In at Sn site can cause 19-fold decrease 2.2 (at room temperature) due both multivalence bands' participation transport further effective mass,...

10.1021/acsnano.1c03120 article EN ACS Nano 2021-06-02

n-Type Bi2Te2.7Se0.3 (BTS) is the state-of-the-art thermoelectric material near room temperature. However, figure of merit ZT commercial BTS ingots still limited and further improvement imperative for their wide applications. Here, results show that through dispersion Ag2Te nanophase in BTS, one can not only elevate its power factor (PF) by as high 14% (at 300 K) but also reduce thermal conductivity κtot to small ∼29% K). Experimental evidences improved PF comes from both increased electron...

10.1021/acsami.3c08294 article EN ACS Applied Materials & Interfaces 2023-07-20

Abstract Materials with low intrinsic lattice thermal conductivity are crucial in the pursuit of high‐performance thermoelectric (TE) materials. Here, TE properties PbBi 2 Te 4‐x Se x (0 ≤ 0.6) samples systematically investigated for first time. Doping 4 can simultaneously reduce carrier concentration and increase mobility. The Seebeck coefficient is significantly increased by doping Se, based on density functional theory calculation, it shown to be due bandgap electronic states. In...

10.1002/smll.202400449 article EN Small 2024-03-15

Thermoelectric properties of CuSb1–xCdxSe2 (x = 0–0.08) compounds, prepared by vacuum melting, were studied at temperatures 300–675 K. The results indicate that Cd doping causes both remarkable increase in the Seebeck coefficient and drastic drop lattice thermal conductivity. enhancement thermopower originates mainly from electronic density states, while conductivity can be ascribed to enhanced phonon scattering introduced impurity (dopant) atoms. As a consequence, thermoelectric figure...

10.1021/acsaem.0c02820 article EN ACS Applied Energy Materials 2021-01-21

A large ZT of 0.50 is achieved for CuSb 0.91 Se 2 due to 44% enhancement power factor and 22% reduction lattice thermal conductivity, which realized through introducing Sb vacancies.

10.1039/d1tc02728j article EN Journal of Materials Chemistry C 2021-01-01

Herein, ZT max = ∼1.2 at 423 K and high average ave ∼ 1.1 (300 K–473 K) are reached for the BTS-0.35 vol% Ag 9 AlSe 6 sample, which is around 38% 33% higher, respectively, than those values a pristine BTS sample.

10.1039/d2qi01232d article EN Inorganic Chemistry Frontiers 2022-01-01

Bi2Te3-based thermoelectric (TE) materials are the state-of-the-art compounds for commercial applications near room temperature. Nevertheless, application of n-type Bi2Te2.7Se0.3 (BTS) is restricted by comparatively low figure merit (ZT) and intrinsic embrittlement. Here, we show that through dispersion amorphous Si3N4 (a-Si3N4) nanoparticles both 14% increase in power factor (at 300 K) 48% decrease lattice thermal conductivity simultaneously realized. The increased comes from enhanced...

10.1021/acsami.4c02652 article EN ACS Applied Materials & Interfaces 2024-04-22

As an ecofriendly thermoelectric material with intrinsic low thermal conductivity, ternary diamond-like Cu2SnSe3 (CSS) has attracted much attention. Nevertheless, its figure of merit, ZT, is limited by small thermopower (S) and power factor (PF). Here, we show that increase in 63% a carrier-mobility rise 81% at 300 K can be simultaneously achieved through 5% substitution Fe for Sn due to both enhancement electronic density states degeneracy multiple valence band maxima, which lead high PF =...

10.1021/acsami.0c04298 article EN ACS Applied Materials & Interfaces 2020-04-14

Transition-metal dichalcogenide WSe2 has attracted increasing interest due to its large thermopower (S), low-cost, and environment-friendly constituents. However, thermoelectric figure of merit, ZT, is limited lattice thermal conductivity (κL) low electrical conductivity. In view MoS2 having the same crystal structure, here we designed prepared Nb-doped quarternary mixed (MC) Nb0.05W0.95–xMox(Se1–xSx)2 (0 ≤ x 0.095). The results indicate that κL MC can reach as 0.12 W m K–1 at 850 K, being...

10.1021/acsami.3c17511 article EN ACS Applied Materials & Interfaces 2024-01-18

Lead chalcogenide-based compounds (SnTe) are state-of-the-art thermoelectric materials. However, the performance of environmentally friendly p-type SnTe is inferior due to its high hole concentration and thermal conductivity. a high-pressure strategy beneficial method for property improvement through structural modification defect engineering. Herein, we investigated behaviors different defects upon pressures found that formation energy VSn2– gradually increased with pressure, which suggests...

10.1021/acsaem.4c00249 article EN ACS Applied Energy Materials 2024-05-15

Current understanding of the intrinsic point defects and potential extrinsic dopants in p-type Cu2SnSe3 is limited, which hinders further improvement its thermoelectric performance. Here, we show that dominant are CuSn VCu under different chemical conditions, respectively. The presence will damage hole conduction network reduce mobility. Besides, find substitution Al, Ga, In, Cd, Zn, Fe, Mn for Sn can inhibit formation VCu; introducing CuSn, FeSn, MnSn, NiCu significantly enhance electronic...

10.1021/acs.inorgchem.2c03292 article EN Inorganic Chemistry 2023-01-27

p-type PbTe has long been realized as an excellent thermoelectric (TE) material in the mediate temperature range; however, its counterpart, n-type PbTe, presents poor TE performance. In order to enhance performance of Pb0.995Bi0.005Te-based composites incorporated with MgO nanoparticles have prepared, and their properties are investigated. The results show that power factor can be enhanced by incorporation at high due optimized carrier concentration remarkable energy filtering effects,...

10.1063/5.0013039 article EN Applied Physics Letters 2020-07-27

Based on the calculated results of band structures and density states, Bi doping is used to adjust its carrier concentration in order obtain n-type PbTe materials with high power factor. Then, coherent nanophase Cu1.75Te situ formed matrix, which can simultaneously optimize thermal electrical properties. As a result, at relative lower temperature than other reports, highest ZT value 1.4 obtained 623 K for nominal Pb0.995Bi0.005Te+0.86 wt% sample. More importantly, hold higher broad...

10.1016/j.jmat.2020.08.001 article EN cc-by-nc-nd Journal of Materiomics 2020-08-12

A 2.3-fold rise in power factor and 40% drop the lattice thermal conductivity is realized through micro- electronic structure modulation with mechanical milling, leading to a large ZT = 0.9 for Cu<sub>2</sub>SnSe<sub>3</sub>.

10.1039/d0nr08045d article EN Nanoscale 2021-01-01

Transition-metal dichalcogenide WSe2 is a potentially good thermoelectric (TE) material due to its high thermopower (S). However, the low electrical conductivity (σ), power factor (PF), and relatively large lattice thermal (κL) of pristine degenerate TE performance. Here, we show that through proper substitution Nb for W in WSe2, PF can be increased by ∼10 times, reaching 5.44 μW cm-1 K-2 (at 850 K); simultaneously, κL lowers from 1.70 0.80 m-1 K-1. Experiments reveal increase originates...

10.1021/acsami.3c02983 article EN ACS Applied Materials & Interfaces 2023-04-26
Coming Soon ...