The ability of VO2 to undergo semiconductor-to-metal phase transition (SMT) upon heating makes it a very attractive material for uncooled bolometers. SMT represents large temperature coefficient resistance, which is an important parameter the development highly responsive microbolometers. However, other characteristics such as its high (341.2 K), sharpness transition, hysteresis, and room resistivity limit performance this in In work, we grow high-quality epitaxial ultrathin film on c-plane...

This study explores low-temperature solution-process-based seed-layer-free ZnO p-n homojunction light-emitting diode (LED). In order to obtain p-type nanodisks (NDs), antimony (Sb) was doped into by using a facile chemical route at 120 °C. The X-ray photoelectron spectra indicated the presence of (SbZn-2VZn) acceptor complex in Sb-doped NDs. Using these NDs as freestanding templates, undoped n-type nanorods (NRs) were epitaxially grown 95 °C form homojunction. with turn-on voltage 2.5 V...

Abstract Titanium (Ti)-doped hematite (α-Fe 2 O 3 ) films were grown in oxygen-depleted condition by using the spray pyrolysis technique. The impact of post-deposition annealing oxygen-rich on both conductivity and water splitting efficiency was investigated. X-ray diffraction pattern revealed that are rhombohedral α-Fe structure dominantly directed along (012). as-grown found to be highly conductive with electrons as majority charge carriers (n-type), a carrier concentration 1.09×10 20 cm...

Antiferroelectrics are valuable dielectric materials, offering promise for both high energy storage and solid-state caloric cooling applications. However, few antiferroelectrics known or available. Therefore, it is crucial to discover design materials showing antiferroelectric behaviour. In this study, we fabricated highly ordered lead scandium tantalate ceramics doped with calcium. From calorimetry polarization-electric field loops, demonstrate the effect of calcium on thermal properties...

Abstract We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO 3 -xBiFeO (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO (Nb:STO) substrates. The piezoelectric force microscopy (PFM) measurement at room temperature demonstrated ferroelectricity in the BT-BFO thin film. PFM results also reveal repeatable polarization inversion by poling, manifesting its potential for read-write operation NVM...

In this study, plasmonic silver (Ag) nanoparticle-(NP) anchored ZnO nanorods (NRs) and nanotube-(NT) based UV photodetectors are demonstrated. Here, Ag NPs synthesized by using a room-temperature photochemical method exposing the precursor solution in radiation. order to achieve stronger surface plasmon resonance (SPR) minimum agglomeration, is optimized with concentration of 5 mmol, intensity 0.4 mW · cm-2, an exposure time 30 min. An asymmetry around 380 nm absorption spectra NP indicates...

Fully inorganic flexible light-emitting diodes (LEDs) were demonstrated by using CuO nanorods (NRs) and ZnO NRs as the hole electron transport materials, respectively. The heterojunctions fabricated inside 5 μm square patterns in order to achieve better flexibility. current-voltage characteristic of heterojunction revealed a typical p-n diode nature with an on-off ratio 8.6 × 102 at 4 V, turn-on voltage 2.8 stable current flow different stress. electroluminescence spectra from LED forward...

In this work, we introduce a new class of p-type transparent conductive oxide (TCO) CuCrO 2 (150 nm) heterogeneously integrated onto FTO/glass for forming free memristor based neuromorphic applications.The fabricated Al/CuCrO /FTO memristors demonstrate reliable bipolar resistive switching with an ON/OFF ratio 1000.The retention the device was found to be steady even beyond 10 6 s, which demonstrates its non-volatility.The current-voltage (I-V) characteristics were fitted evaluate transport...

Abstract We report low-temperature solution-processed p-CuO nanorods (NRs)/n-ZnO NRs heterojunction light emitting diode (LED), exploiting the native point defects of ZnO NRs. were synthesized at 90 °C by using hydrothermal method while CuO 100 microwave reaction system. The electrical properties newly revealed a promising p-type nature with hole concentration 9.64 × 10 18 cm −3 . current-voltage characteristic showed significantly high rectification ratio 5 4 V stable current flow. A broad...

We report the growth of InxGa1−xAs nanowires on Si(100) substrates by metal–organic chemical vapor deposition technique in a one-step process using silver nanoparticles as catalysts. Nanowires were found to grow below eutectic temperature Ag–Si over wide range temperature. The morphology and mode nanowire change with images obtained from field-emission scanning electron microscopy reveal that at 600 °C promotes multi-prong nanowires, while grown lower are single-prong. effect was explained...

Epitaxy of III-V semiconductors on Si gets recent interest for next generation system heterogeneous chip wafer. The understanding band offset is thus necessary describing the charge transport phenomenon in these heterojunctions. In this work, x-ray photoemission spectroscopy has been used to determine offsets a heterojunction made InP quantum dots Si. valence and conduction was found be 0.12 eV 0.35 eV, respectively, with type-II lineup. Deviation from theoretical prediction previously...

Electro-optic thin film materials, which change their refractive index upon the application of an electric field, are crucial for fabrication optical modulators in integrated photonic circuits. Therefore, it is key to develop strategies tune linear electro-optic effect. Strain engineering has arisen as a powerful tool optimize coefficients ferroelectric films. In this report, electro-optical properties polycrystalline bismuth ferrite (BiFeO 3 ) films studied. The (r eff low-cost...

A direct printing method for fabricating devices by using metal oxide transfer layers instead of conventional media such as polydimethylsiloxane is presented. Metal oxides are not damaged organic solvents; therefore, electrodes with gaps less than 2 μm can be defined on a layer through photolithography. In order to determine suitable use layer, the surface energies various measured, and Au deposited these transferred onto polyvinylphenol (PVP). To verify feasibility our approach,...

Ultrathin InP passivated GaAs non-volatile memory devices were fabricated with chemically synthesized 5 nm ZnO quantum dots embedded into ZrO2 high-k oxide matrix deposited through metal organic chemical vapor deposition. In these devices, the window was found to be 6.10 V and obtained charge loss only 15.20% after 105 s. The superior retention characteristics a wide are achieved due presence of between tunneling control layers. Room temperature Coulomb blockade effect in it ascertained main...

High-performance, solution-processed transparent and flexible zinc oxide (ZnO) nanorods (NRs)-based single layer network structured thin film transistors (TFTs) were developed on polyethylene terephthalate (PET) substrate at 100 °C. Keeping the process-temperature under °C, we have improved device performance by introducing three low temperature-based techniques; regrowing ZnO to fill void spaces in a of NRs, passivating back channel with polymer, adopting ZrO2 as high-k dielectric. Notably,...

Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation Souvik Kundu, Nripendra N. Halder, Pranab Biswas, D. P. Banerji, Rabibrata Mukherjee, S. Chakraborty; Charge storage properties of InP quantum dots in GaAs metal-oxide-semiconductor based nonvolatile flash memory devices. Appl. Phys. Lett. 19 November 2012; 101 (21): 212108. https://doi.org/10.1063/1.4767522...

We investigate the superconducting properties of ${\mathrm{Sc}}_{5}{\mathrm{Co}}_{4}{\mathrm{Si}}_{10}$ using low-temperature resistivity, magnetization, heat capacity, and muon-spin rotation relaxation ($\ensuremath{\mu}\mathrm{SR}$) measurements. find that exhibits type-II superconductivity with a transition temperature ${T}_{\mathrm{C}}=3.5(1)\phantom{\rule{4pt}{0ex}}\mathrm{K}$. The dependence superfluid density obtained from transverse-field $\ensuremath{\mu}\mathrm{SR}$ spectra is best...

We examine the localization properties of Anderson Hamiltonian with additional off-diagonal disorder using transfer-matrix method and finite-size scaling. compute lengths study metal–insulator transition (MIT) as a function diagonal disorder, well its energy dependence. Furthermore we investigate different influence odd even system sizes on in quasi one-dimensional systems. Applying scaling approach conjunction nonlinear fitting procedure yields critical parameters MIT. In three dimensions,...