Epitaxial layers of InSb have been grown on Si substrates by molecular beam epitaxy. Room-temperature electron mobilities are 48 000 and 39 cm2/V s for 3.2 μm-thick with without a thin GaAs buffer, respectively. The corresponding carrier concentrations 2.2×1016 2.7×1016 cm−3. A sample an thickness 8 μm exhibited room-temperature as high 55 about 2.0×1016 sharp band-edge transmission spectrum is observed at room temperature the layer.

Addressing online hate speech is a crucial but complex challenge, one that can be supported through Natural Language Processing (NLP) techniques. While previous research has primarily focused on developing NLP methods to automatically detect speech, it largely overlooked the need for proactive intervention discourage future use. Additionally, most existing datasets treat each post as an isolated instance, failing consider broader conversational context. In this paper, we introduce novel...

The work presents a comparative study on the effects of In incorporation in channel layer AlGaN/GaN type-II heterostructures grown c-plane sapphire by Plasma Assisted Molecular Beam Epitaxy. structural characterizations these samples were performed High-Resolution X-Ray Diffraction (HRXRD), X-ray Reflectivity (XRR), Field Emission Scanning Electron Microscopy, and High Resolution Transmission Microscopy. two-dimensional electron gas AlGaN/InGaN interface was analyzed electrochemical...

The optical properties of InxGa1−xP/GaAs and InxGa1−xP/graded InGaP/GaP (0.25≤x≤0.8) epitaxial layers have been studied using spectroscopic ellipsometry Raman spectroscopy. (E1,E1+Δ1) critical points the first-order phonon frequencies were determined as a function In composition. general behavior peak shifts broadenings both E1 gaps phonons can be explained in terms biaxial strain relaxation caused by lattice-mismatch. near-cancellation gap change due to compensation effect between alloy...

We have investigated the interface properties of rapid thermal annealed in situ deposited gate quality Si3N4/Si/n-GaAs metal-insulator-semiconductor (MIS) capacitors. Conductance measurements show a minimum trap density 1011 eV−1 cm−2 located lower-half GaAs band gap. The quasi-static capacitance-voltage (QSCV) curve shows largest dip toward high-frequency C-V ever observed compound semiconductor-based MIS structures. In spite lowest for GaAs-based structures reported, conductance data...

GaAs/Ge/GaAs heterostructures have been grown by molecular beam epitaxy on GaAs substrates with nominally (100) and tilted 4° towards [01̄1] orientations. High-energy electron diffraction is used to study the antiphase boundaries of epitaxial Ge. We observed annihilation Ge substrates. be free domains.

We report significant improvements in the electrical characteristics of Si3N4/Si/GaAs capacitors with assistance atomic hydrogen during situ growth Si on GaAs. have shown a minimum interface state density as low 3×1010 eV−1 cm−2 determined by low-frequency capacitance method. The hysteresis and frequency dispersion GaAs metal-insulator-semiconductor capacitor are very small (200 100 meV, respectively). These results represent advances over previous reports.

Epitaxy of III-V semiconductors on Si gets recent interest for next generation system heterogeneous chip wafer. The understanding band offset is thus necessary describing the charge transport phenomenon in these heterojunctions. In this work, x-ray photoemission spectroscopy has been used to determine offsets a heterojunction made InP quantum dots Si. valence and conduction was found be 0.12 eV 0.35 eV, respectively, with type-II lineup. Deviation from theoretical prediction previously...

We have investigated the effects due to capture of tunneling electrons by interface traps measured capacitance, Cm, and equivalent series resistance, Rm, insulator-semiconductor interfaces in metal-insulator-semiconductor (MIS) capacitors accumulation. A new circuit model taking into account is derived. Theoretical experimental results Si3N4/Si/GaAs, Si3N4/epi-Si, SiO2/epi-Si MIS are compared. The Si, Si3N4, SiO2 layers were deposited situ electron cyclotron resonance generated plasma an...

In this letter, we report on gate quality Si3N4/Si/n-In0.53Ga0.47As capacitors representing significant improvement over that which has been previously obtained. These are formed by in situ nitride and Si layer deposition as-grown molecular-beam epitaxy structure characterized a small frequency dispersion, hysteresis, flat band voltage close to zero, minimum interface trap density of 2.4×1011 eV−1 cm−2.

In this study, a multiphase fractional phase-locked loop (PLL) is presented with methods to reduce spurs. General causes of spurs are non-idealities the phase-frequency detector (PFD) and charge pump (CP) phase errors between adjacent phases from oscillator. architecture, PFD CP compensated correction circuit added after oscillator generator errors, hence minimise Spurs may still be persistent these modifications due process variations device mismatch. The effect visible in perturbations...

We report on the electrical characteristics of in situ deposited Si3N4/Si/In0.53Ga0.47As depletion-mode metal-insulator-semiconductor field-effect transistors (MISFETs). MISFETs with 2.2-μm gate lengths fabricated by a self-aligned process exhibited extrinsic transconductances over 200 mS/mm. The drain current drifted only 1% during first 10 h operation. This small shift is attributed to reduction traps at interface pseudomorphic Si layer, incorporated between dielectric and In0.53Ga0.47As channel.

High crystalline quality GaAs/Ge/GaAs heterostructures have been grown on both straight and slightly misoriented GaAs(100) substrates by molecular beam epitaxy. High-energy electron diffraction was used to study the sublattice rotation of GaAs epitaxial Ge dependent use a Ga or As prelayer. On (100) substrates, prelayer observed rotate surface reconstruction π/2 while an preserved orientation prior deposition. No tilted 4° towards [011]. We present growth model explain these results.

A Low Power, Noise Neural Amplifier is designed in this paper. Folded Cascode Operational Transconductance (OTA) with self-biased cascode current mirror load used. Current Scaling and other low noise design techniques are employed to achieve the input referred power dissipation. The amplifiers bandwidth can be adjusted record either local field potentials or neural spikes by controlling bias current. Simulations were performed Cadence Virtuoso using SCL 180nm technology parameters....

A low noise InGaP/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT) with high IP3 was developed. The device utilises InGaP as the Schottky layer to achieve a figure and uses AlGaAs spacer reform electron mobility contains dual delta doped layers improve linearity.

Physics based modeling of AlGaN/GaN heterostructure Schottky diode gas sensor has been investigated for high sensitivity and linearity the device. Here surface heterointerface properties are greatly exploited. The dependence two dimensional electron (2DEG) upon charges is mainly utilized. simulation done in Technology Computer Aided Design (TCAD) tool I-V curves generated, from 76% response recorded presence 500 ppm at a biasing voltage 0.95 Volt.

InxAl1-xN/AlN/GaN HEMT device performance is analysed at various temperatures with the help of physics based 2-D simulation using commercially available BLAZE and GIGA modules from SILVACO. Various material parameters viz. band-gap, low field mobility, density states, velocity saturation, substrate thermal conductivity are considered as critical for predicting temperature effect in HEMT. Reduction drain current transconductance has been observed due to decrease 2-DEG mobility effective...

In this work, a 5‐GHz current‐controlled ring oscillator based integer PLL is implemented with spur reduction sampler to reduce the reference spurs. The can have taps each tap sampling oscillator's control voltage at offsets of phase. introduces bandstop notches frequencies where spurs appear. samplers are capable reducing from , by 50 dB, as evident simulation results performed in 28 nm technology.

Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation Shubhankar Majumdar, S. Das, D. Biswas; Barrier layer engineering: Performance evaluation of E-mode InGaN/AlGaN/GaN HEMT. AIP Conference Proceedings 28 August 2015; 1675 (1): 020021. https://doi.org/10.1063/1.4929179 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote...

High-density, self-assembled InAs quantum dots were grown on Si (100) substrates without any buffer layer by solidsource molecular beam epitaxy, following Volmer-Weber growth mode. The reconstructed (2 × 1) surface and transition from two-dimensional (2-D) to three-dimensional (3-D) observed in situ reflection high energy electron diffraction (RHEED). Surface morphology, shape, chemical composition of these investigated through scanning microscopy (SEM), atomic force (AFM), dispersive X-ray...

A metamorphic high-electron-mobility transistor (MHEMT) with In 0.55 Ga 0.45 As/In 0.67 0.33 As composite channel layers was developed for low-noise and high-linearity applications. The use of a results in high electron mobility good confinement electrons the region which are desired characteristics devices. noise figure 0.25 ×160 µm 2 devices is 0.23 dB 15.06 associated gain, output third-order intercept point (IP3) 18.67 dBm at 6 GHz. device shows great potential applications frequencies.