A5064712403- GaN-based semiconductor devices and materials
- Semiconductor Quantum Structures and Devices
- Quantum Dots Synthesis And Properties
- Ga2O3 and related materials
- Semiconductor materials and devices
- Chalcogenide Semiconductor Thin Films
- ZnO doping and properties
- Advanced Semiconductor Detectors and Materials
- Acoustic Wave Resonator Technologies
- Semiconductor Lasers and Optical Devices
- Silicon Carbide Semiconductor Technologies
- Nanowire Synthesis and Applications
- Semiconductor materials and interfaces
- Graphene research and applications
- Gas Sensing Nanomaterials and Sensors
- Copper-based nanomaterials and applications
- Metal and Thin Film Mechanics
- Advancements in Semiconductor Devices and Circuit Design
- Silicone and Siloxane Chemistry
- Advanced Photocatalysis Techniques
- Fiber-reinforced polymer composites
- Quantum Information and Cryptography
- Photocathodes and Microchannel Plates
- Advanced ceramic materials synthesis
- Photonic Crystals and Applications
Sikkim Manipal University
2021-2024
Indian Institute of Technology Kharagpur
2012-2015
Georgia State University
2015
Indian Institute of Technology Bombay
2013
University of Calcutta
2007-2012
The work presents a comparative study on the effects of In incorporation in channel layer AlGaN/GaN type-II heterostructures grown c-plane sapphire by Plasma Assisted Molecular Beam Epitaxy. structural characterizations these samples were performed High-Resolution X-Ray Diffraction (HRXRD), X-ray Reflectivity (XRR), Field Emission Scanning Electron Microscopy, and High Resolution Transmission Microscopy. two-dimensional electron gas AlGaN/InGaN interface was analyzed electrochemical...
The intersublevel absorption peak energy and coefficient of non-uniform quantum dot (QD) ensembles are calculated analytically. effect size variations distribution QDs on their states is analyzed. dots considered as a box with finite potential at the barriers described by Gaussian function. influence aspect ratio (base to height ratio) optical transitions studied. Our model predicts (height base) accurately determine peaks corresponding coefficient. We also compute QD different distributions...
Abstract A facile chemical route of synthesis ZnS-rGO binary nanocomposites is reported here. The efficacy such as a photocatalyst in degrading the common pollutant dye Methylene blue (MB), has been thoroughly investigated and underlying mechanism also presented. standard characterization methods were applied to understand structure, bonding, morphology, optical elemental compositions. results indicated that ZnS nanoparticles well dispersed into rGO nanosheets which due their 2D sheet served...
Band lineup is one of the most important parameters associated with carrier confinement in heterostructures. Relations for computing band lineups InxGa1−xN based heterostructures have been developed. The positions InxGa1−xN/GaN heterointerfaces are calculated from equations developed, which directly corelate bands gap InN and strain at interface. strains In mole fractions lattice constants. implicitly involved elastic stiffness constants (C11 C12), hydrostatic deformation potential...
Introduction: Titanium Dioxide (TiO2) is popular in the scientific community due to its wide variety of applications optoelectronic devices, solar cells, gas sensors, photocatalytic reagents, and biomedical industry. It a band gap semiconductor with 3.2eV. Usually, it shows three different phases, like anatase, rutile, brookite, based on synthesis method annealing temperature. Method: Here, we report simple chemical process synthesize TiO2 nanostructures (NSs) at low temperatures study...
Current transient analysis combined with response to pulsed bias drives have been used explore the possibilities of threading dislocations affecting current dispersion characteristics AlGaN/GaN heterostructure field-effect transistors (HFETs). A growth strategy is developed modulate dislocation density among heterostructures grown on silicon by plasma-assisted molecular-beam epitaxy. Slow I-V measurements show severe compressions and appear be significantly dependent density. By analyzing...
InAs/GaAs quantum dots (QDs) grown by various methods do not have the same dimensions in three axes. This paper reports on expressions for computations of optical transitions and absorption spectra QDs that a square base variation height is Gaussian. The were considered to be elongated boxes with bases having finite potentials at boundaries. results are excellent agreement reported experimental data photoluminescence absorption. could successfully applied short wires.
High-density, self-assembled InAs quantum dots were grown on Si (100) substrates without any buffer layer by solidsource molecular beam epitaxy, following Volmer-Weber growth mode. The reconstructed (2 × 1) surface and transition from two-dimensional (2-D) to three-dimensional (3-D) observed in situ reflection high energy electron diffraction (RHEED). Surface morphology, shape, chemical composition of these investigated through scanning microscopy (SEM), atomic force (AFM), dispersive X-ray...
Change of linearity and gain with different drain gate bias has been studied for AlGaN/GaN HEMT on Sapphire substrate. While increases higher bias, maximum the device decreases. Generation more phonon its related scattering electrons decrease mobility carries. It further minimizes current at high longitudinal field 2DEG channel.
Introduction: This article presents structural and morphological analysis for graphene oxide (GO) synthesized via Hummers' method reduced Graphene Oxide (rGO) prepared by chemical reduction. is from graphite powder at room temperature. Hydrazine hydrate used as a reducing agent to reduce the accumulated GO. Method: To understand impact of reduction time on parameters produced rGO, three different limits, i.e. 4, 5, 6 hrs 800 °C are used. FTIR spectra show presence all functional groups...
Abstract In this paper, a theoretical model has been presented to calculate the photocurrent and detectivity in TiO 2 /ZnS core‐shell quantum dot (CSQD) photodetector. Analytical modeling permits available corresponding from CSQD structures. model, subband energy levels of are estimated using 3D symmetric box structures with finite potential barrier. The band offset determines number depending on size core. Theoretical results show variation different core sizes for constant shell thickness....
Abstract A class of quantum dots (QD) known as core–shell (CSQDs) where a lower band gap material is enclosed by higher material, are highly confined nanoparticles, that project altered properties like enhanced carrier confinement, stability, and reduced recombination. The strain generated, due to the formation heterojunction-like structure near CSQD boundary, has direct impact on its opto-electronic altering positions materials. In this work, we aimed understand generated such...