A5057226095- Semiconductor Quantum Structures and Devices
- GaN-based semiconductor devices and materials
- Photonic and Optical Devices
- Semiconductor materials and devices
- ZnO doping and properties
- Advanced Semiconductor Detectors and Materials
- Ga2O3 and related materials
- Nanowire Synthesis and Applications
- Semiconductor materials and interfaces
- Gas Sensing Nanomaterials and Sensors
- Photovoltaic System Optimization Techniques
- Quantum Dots Synthesis And Properties
- Analytical Chemistry and Sensors
- Photonic Crystals and Applications
- Acoustic Wave Resonator Technologies
- Silicon Nanostructures and Photoluminescence
- Solar Radiation and Photovoltaics
- Advanced Optical Sensing Technologies
- Advanced Multi-Objective Optimization Algorithms
- Magnesium Oxide Properties and Applications
- solar cell performance optimization
- Smart Grid and Power Systems
- Magneto-Optical Properties and Applications
- Evolutionary Algorithms and Applications
- Metal and Thin Film Mechanics
Birla Institute of Technology and Science, Pilani
2020-2025
Chitkara University
2024
University of Arkansas at Fayetteville
2017-2023
Gifu University
2021
Indian Institute of Engineering Science and Technology, Shibpur
2017-2019
Indian Institute of Technology Kharagpur
2013-2018
The work presents a comparative study on the effects of In incorporation in channel layer AlGaN/GaN type-II heterostructures grown c-plane sapphire by Plasma Assisted Molecular Beam Epitaxy. structural characterizations these samples were performed High-Resolution X-Ray Diffraction (HRXRD), X-ray Reflectivity (XRR), Field Emission Scanning Electron Microscopy, and High Resolution Transmission Microscopy. two-dimensional electron gas AlGaN/InGaN interface was analyzed electrochemical...
Enhancement of two dimensional electron gas (2DEG) concentrations at Al0.3Ga0.7N/GaN hetero interface after a-Si3N4 (SiN) passivation has been investigated from non-destructive High Resolution X-ray Diffraction (HRXRD) analysis, depletion depth and capacitance-voltage (C-V) profile measurement. The crystalline quality strained in-plane lattice parameters Al0.3Ga0.7N GaN were evaluated double axis (002) symmetric (ω-2θ) diffraction scan (105) asymmetric reciprocal space mapping (DA RSM) which...
Crystalline zinc blende GaAs has been grown on a trigonal c-plane sapphire substrate by molecular beam epitaxy. The initial stage of thin film growth investigated extensively in this paper. When sapphire, it takes (111) crystal orientation with twinning as major problem. Direct results three-dimensional islands, almost 50% twin volume, and weak in-plane correlation the substrate. Introducing AlAs nucleation layer complete wetting substrate, better reduced to 16%. Further, we effect...
Highly sensitive acetone sensing performance of Pd/AlGaN/GaN resistive devices in the temperature range 100 °C-250 °C and detection 100-1000 ppm was reported. A plasma-assisted molecular beam epitaxy used to grow AlGaN/GaN heterostructure on Si (111) substrate. Structural characterization grown epilayers performed through double-crystal X-ray diffraction whereas atomic force microscopy obtain roughness surface. Resistive mode configuration sample tested toward °C. The optimum found be 150...
Molecular beam epitaxy (MBE) was used to grow dissimilar materials like cubic Ge on a hexagonal c -plane sapphire substrate. To the authors' best knowledge, this is first time single crystalline grown
In this work, cluster tool (CT) Plasma Assisted Molecular Beam Epitaxy (PA-MBE) grown AlGaN/GaN heterostructure on c-plane (0 0 1) sapphire (Al2O3) were investigated by High Resolution X-ray Diffraction (HRXRD), Room Temperature Raman Spectroscopy (RTRS), and Photoluminescence (RTPL). The effects of strain doping GaN AlGaN layers thoroughly. out-of-plane (‘c’) in-plane (‘a’) lattice parameters measured from RTRS analysis as well reciprocal space mapping (RSM) HRXRD scan (002) (105) plane....
A new and exciting resistive gas sensor based on Ni/InGaN/GaN heterostructure, grown by plasma-assisted molecular beam epitaxy, has been developed to efficiently detect acetone very rapidly at low temperature. Non-rectifying I-V characteristics of epitaxially relaxed InGaN with Ni contact have revealed 373 K. An incremental current 11.74 μA found K the exposure 100 ppm vapor an operating bias 0.4 V. Sensitivity obtained from transient response curves. Most importantly, fast response/recovery...
A set of samples containing a single ultrathin InAs layer with varying thickness from 0.5 to 1.4ML in GaAs matrix have been grown by molecular beam epitaxy on (001) substrates at low temperatures and investigated low-temperature photoluminescence (PL). linear change emission energy has experimentally observed. The PL line shape InAs/GaAs heterostructures as function incident optical intensity. interplay between uncorrelated electron-hole pairs, free excitons, localized the excitation...
InAs quantum dots (QDs) have been grown on a GaAs (001) substrate in the subcritical region of coverage for transition from 2-dimensional (2D) to 3-dimensional growth mode. Evolution QDs and corresponding wetting layer (WL) with has investigated. Under specific conditions, dot formation was observed only samples where is more than 1.48 ML. The QD density increases sharply deposition initially but slows down increased coverage. Photoluminescence (PL) shows existence third peak, other WL...
This work investigates the use of Multi-Objective Evolutionary Algorithms (MOEAs) in Hardware Design Space Exploration context. Through a heterogeneous data set that spanned different hardware configurations and performance measurements, four widely known MOEAs namely NSGA-II, SPEA2 IBEA MOPSO have been systematically assessed. Experiments aimed at major indicators, including convergence, diversity, hypervolume maximization. It has shown NSGA-II largely well-balanced terms convergence versus...
A nondestructive approach is described that applicable for studying the In-segregation phenomena in ultra-thin In(Ga)As/GaAs nanostructures grown by molecular beam epitaxy. The proposed method utilizes only experimental photoluminescence (PL) spectroscopy data and effective bandgap simulation of specially designed nanostructures. On example InAs In0.25Ga0.75As quantum wells with thicknesses 1 monolayer (ML) 4 MLs, respectively, a good correlation In segregation coefficient obtained from STEM...