A5101483609- GaN-based semiconductor devices and materials
- Physics of Superconductivity and Magnetism
- Semiconductor Quantum Structures and Devices
- ZnO doping and properties
- Gold and Silver Nanoparticles Synthesis and Applications
- Metal and Thin Film Mechanics
- Ga2O3 and related materials
- Plasmonic and Surface Plasmon Research
- Acoustic Wave Resonator Technologies
- Superconducting Materials and Applications
- Semiconductor materials and devices
- Nonlinear Optical Materials Studies
- Advanced biosensing and bioanalysis techniques
- Nanowire Synthesis and Applications
- Magnetic confinement fusion research
- Theoretical and Computational Physics
- Magnetic Properties and Applications
- Thermal properties of materials
- Superconductivity in MgB2 and Alloys
- Black Holes and Theoretical Physics
- Rare-earth and actinide compounds
- Metal Extraction and Bioleaching
- Advanced Semiconductor Detectors and Materials
- Advancements in Semiconductor Devices and Circuit Design
University of Arkansas at Fayetteville
2016-2024
University of Hyderabad
1997-1998
Metallic, especially gold, nanostructures exhibit plasmonic behavior in the visible to near-infrared light range. In this study, we investigate optical enhancement and absorption of gold nanobars with different thicknesses for transverse longitudinal polarizations using finite element method simulations. This study also reports on discrepancy resonance wavelengths sharp-corner round-corner constant length 100 nm width 60 nm. The result shows that amplitude wavelength have strong dependences...
A set of samples containing a single ultrathin InAs layer with varying thickness from 0.5 to 1.4ML in GaAs matrix have been grown by molecular beam epitaxy on (001) substrates at low temperatures and investigated low-temperature photoluminescence (PL). linear change emission energy has experimentally observed. The PL line shape InAs/GaAs heterostructures as function incident optical intensity. interplay between uncorrelated electron-hole pairs, free excitons, localized the excitation...
The authors present the use of epitaxial AlN as dielectric in a chip level thin film capacitor for operation at high temperatures and frequencies. They have performed capacitance measurements up to 600 K. basic performance is modeled simple metal-insulator-semiconductor capacitor, which provides insight into underlying mechanisms accumulation, depletion, inversion. Throughout tested temperature range, highly stable with only slight, linear, decrease temperature. Additionally, low...
We report the effects of nitrogen (N) plasma and indium (In) flux on In adatom adsorption/desorption kinetics a GaN(0001) surface at relatively high plasma-assisted molecular beam epitaxy-growth temperature 680 °C. experimentally demonstrate that under an active N flux, (3×3)R30° reconstruction containing quickly appears dynamically stable adlayers sitting this exhibit continuous change from 0 to 2 MLs as function flux. Compared bare GaN 1×1 which is during exposure without we observed much...
In this work, we study the thermal evolution of optical and electrical features an InN thin film. By correlating photoluminescence (PL) Hall effect results, determine appropriate values correlation parameter to be used in empirical power law that associates electron concentration with linewidth PL spectrum, scope Burstein–Moss across a wide range temperatures. Additionally, by associating Raman observe thermally induced compressive strain widening bandgap Our findings demonstrate reliability...
Compositionally graded In x Ga 1 –x N‐based materials have been receiving more attention recently due to both their novel structure and intrinsic properties. However, high‐quality material with a well‐controlled optimized grade high composition remains challenging grow. Herein, the growth characterization of continuous 2D films compositionally N are investigated using molecular beam epitaxy (MBE) on (0001) GaN templates at 575 °C. Each film is formed by grading from 1– back GaN,...
The equation of motion a fluxoid with viscous forces is solved to calculate the effective London penetration depth which found vary as square root magnetic field. function field in single crystals reasonable agreement theory.
Ionizing radiation has the potential to cause operational disruptions and destroy microelectronic devices. This paper introduces demonstrates a method of hardening devices for sustained use in applications where exposure ionizing exists. By incorporating quantum structures below active regions devices, gettering charges created by becomes possible. The electrons holes forces recombination carriers, thus eliminating photocurrent surges trap filling which would otherwise disrupt device...
Plasmonic nanodevices are metallic structures that exhibit plasmonic effects when exposed to light, causing scattering and enhancement of light. These plasmons makes it possible for light be focused below the diffraction limit. Dark-field spectroscopy has been used capture spectra these in order examine resonant frequencies provided by devices. The geometries devices change which wavelengths most readily able couple device, resulting a wavelength scattered A variety device configurations...
We obtain both topological as well nontopological self-dual charged vortex solutions of finite energy per unit length in a generalized abelian Higgs model $3+1$ dimensions. In this the Bogomol'nyi bound on is obtained linear combination magnetic flux and electric charge length.