A5041330722- Photonic and Optical Devices
- Semiconductor Quantum Structures and Devices
- Nanowire Synthesis and Applications
- GaN-based semiconductor devices and materials
- ZnO doping and properties
- Advanced Photonic Communication Systems
- Semiconductor Lasers and Optical Devices
- Semiconductor materials and devices
- Biological Activity of Diterpenoids and Biflavonoids
- Advanced Semiconductor Detectors and Materials
- Ga2O3 and related materials
- Virtual Reality Applications and Impacts
- Phytochemistry and Biological Activities
- Natural Compound Pharmacology Studies
- Natural product bioactivities and synthesis
- Traumatic Brain Injury Research
- Magnetic Field Sensors Techniques
- Metal and Thin Film Mechanics
- 2D Materials and Applications
- Traditional and Medicinal Uses of Annonaceae
- Graphene research and applications
- Acoustic Wave Resonator Technologies
- Posttraumatic Stress Disorder Research
- Photonic Crystals and Applications
- Mosquito-borne diseases and control
University of Arkansas at Fayetteville
2020-2024
Universidade Federal de São Carlos
2018-2023
Universidade Estadual do Centro-Oeste
2017
Universidade Federal do Pampa
2015
University of Rio Grande and Rio Grande Community College
2014
San Antonio College
2014
Escola da Cidade
2014
Serviço Nacional de Aprendizagem Comercial
2014
Fundação Oswaldo Cruz
2012
Universidade do Estado do Rio de Janeiro
2012
Germanium tin (GeSn) is a tuneable narrow bandgap material, which has shown remarkable promise for the industry of near- and mid-infrared technologies high efficiency photodetectors laser devices.
Abstract Objective To investigate risk factors associated with the acquisition of antibodies against Plasmodium vivax Duffy binding protein (PvDBP) – a leading malaria vaccine candidate in well‐consolidated agricultural settlement Brazilian Amazon Region and to determine sequence diversity PvDBP ligand domain (DBP II ) within local parasite population. Methods Demographic, epidemiological clinical data were collected from 541 volunteers using structured questionnaire. Malaria parasites...
The instability during the growth and processing of epitaxial GeSn layers with high Sn molar fraction compressive strain is still to be fully studied. In this work, relationship among relief, dislocations, outdiffusion in a content ∼9 atom % was studied as function pre-existing misfit/threading dislocation (MD/TD) density annealing time at 300 °C. For epilayer strained Ge-on-Si virtual substrate (Ge-VS), an increase relief by factor ∼2 observed after 2 h annealing, without significant effect...
We have grown AlN/gallium nitride (GaN)/AlN heterostructures by molecular beam epitaxy (MBE) and fabricated Hall sensors. In a comparison with AlGaN/AlN/GaN sensors, we find that the AlN/GaN/AlN quantum well (QW) sensors higher sensitivity under constant current bias. addition, application of gate voltage shows further increase in from 3.6 to 6.1 VW <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...
Abstract High-quality monolithic Ge-on-Si is sought for CMOS-compatible optoelectronic devices. We examine the structural characteristics of grown by aspect ratio trapping (ART) method on a SiO 2 /Si(001) template in pre-patterned holes. Transmission electron microscopy and surface topography analysis revealed high-quality Ge islands overgrown from ART holes . The superior crystal quality growth was also confirmed comparing x-ray diffraction (XRD) data planar epilayer samples. XRD...
Ion implantation is widely used in the complementary metal–oxide–semiconductor process, which stimulates to study its role for doping control rapidly emerging group IV Ge1−xSnx materials. We tested impact of As and B subsequent rapid thermal annealing (RTA) on damage formation healing lattice. was done at 30, 40, 150 keV with various doses. The profiles were confirmed using secondary ion mass spectrometry. X-ray diffraction combination Raman photoluminescence spectroscopies indicated notable...
We investigated the thermal stability and performance of AlGaN/AlN/GaN Hall-effect sensors under industry-relevant atmospheric conditions. The Hall are evaluated by monitoring sensitivity, two-dimensional electron gas density, Ohmic contact resistance during aging at 200 °C for up to 2800 h This was accomplished characterizing micro-Hall sensors, with without contacts, before after being placed different times. Observed electrical correlated micro-structural evolution sensor...
Ge1−xSnx growth on a new sapphire platform has been demonstrated. This involved the of GeSn Ge/GaAs layers using algorithm developed. The resultant growths Ge GaAs/AlAs/sapphire and Ge/GaAs/AlAs/sapphire were investigated by in situ ex characterization techniques to ascertain surface morphology, crystal structure, quality. mode GaAs was predominantly two-dimensional (2D), which signifies layer-by-layer deposition, contributing enhanced quality system. with 10% Sn graded profile for 30 min...
The development of all-group IV GeSn materials on Si substrates is interest for monolithic midwave infrared (MWIR) silicon photonics. Despite their great potential, the growth high crystalline quality still challenging. conventional films displays densities dislocations and, hence, large dark currents. We have examined a state-of-the-art lithographically defined aspect ratio trapping (ART) approach threading (TDs) filtering in and demonstrated selective holes embedded SiO2/Si(001) template....
We report on the growth of high-quality GaAs semiconductor materials an AlAs/sapphire substrate by molecular beam epitaxy. The sapphire centers a new single-step technique that produces higher-quality material than previously reported multi-step method. Omega-2theta scans confirmed (111) orientation. Samples grown at 700 °C displayed highest crystal quality with minimal defects and strain, evidenced narrow FWHM values rocking curve. By varying As/Ga flux ratio temperature, we significantly...
Here, we report the synthesis and structural characterization of high-quality Zn3P2 nanowires via chemical vapour deposition. Structural morphological studies revealed a reliable growth process long, uniform, single-crystalline nanowires. From temperature dependent transport photoluminescence measurements, have observed contribution different acceptor levels (15, 50, 70, 90, 197 meV) to conduction mechanisms. These were associated with zinc vacancies phosphorous interstitial atoms which...
A study of the mechanism Sn out-diffusion was performed by annealing Ge0.905Sn0.095 layers at 300 °C. The changes in composition and strain state were confirmed x-ray diffraction photoluminescence spectroscopy. Surface defects, appearing as particles, with highest density 3.5 × 108 cm−2 detected atomic force microscopy after for 2 h. GeSn layer stabilized more prolonged annealing, while particles decreased their size increased. Annealing results are discussed terms segregation subsequent...
High-quality GaAs on the c-plane sapphire has been achieved by employing a two-step growth technique, multiple annealing, and an AlAs nucleation layer using molecular beam epitaxy (MBE). The effect of parameters, namely, temperature, As2 flux, low-temperature temperature (LTLGT) in have investigated. In all grown samples, epitaxial orientation film is (111)A. Unlike homoepitaxial (111)A MBE growth, where increasing flux improves quality, here lowest resulted best quality. Very low LTLGT...