In this work we report on structural and Raman spectroscopy measurements of pure Sn-doped 2 O 3 nanowires. Both samples were found to be cubic high quality single crystals. analysis was performed obtain the phonon modes nanowires confirm compositional information given by characterization. Cubic-like detected in both their distinct phase evidenced presence tin doping. As a consequence, disorder effects break selection rules.

We report on the analysis of nonlinear current–voltage characteristics exhibited by a set blocking metal/SnO2/metal. Schottky barrier heights in both interfaces were independently extracted and their dependence metal work function was analyzed. The disorder-induced interface states effectively pinned Fermi level at SnO2 surface, leading to observed barriers. model is useful for any two-terminal device which cannot be described conventional diode configuration.

We here report the growth and structural characterization of Sb-doped SnO2 nanowires synthesized by Vapor-Liquid-Solid technique using X-ray diffraction, scanning electron microscopy, energy-dispersive spectroscopy, Photoelectron Spectroscopy (XPS) Raman spectroscopy. Both diffraction spectroscopy exhibited typical features rutile phase for all samples. The analysis XPS confirmed Sb doping effectiveness. In addition, spectra revealed inactive modes (242 284 cm−1) attributed to local disorder...

The study of structures based on nonstoichiometric SnO2−x compounds, besides experimentally observed, is a challenging task taking into account their instabilities. In this paper, we report single crystal Sn3O4 nanobelts, which were successfully grown by carbothermal evaporation process SnO2 powder in association with the well known vapor-solid mechanism. By combining structural data and transport properties, samples investigated. results showed triclinic semiconductor structure fundamental...

We present a study of an anomalous electrical behavior observed in SnO2 memristor devices based on nanowire networks previously studied by our group. This shows strongly depend the surface–environment interaction nanowires. To enhance/evidence it, we built device single microwire with higher to ambient air. proved be cyclic voltammetry. Based literature and voltammetry data, propose model describe that formation/rupture surface conductive paths formed water molecules adsorbed oxygen...

Here we combined experimental and theoretical results to correlate the morphological, optical, electronic properties of cerium oxide (CeO2) prepared by a microwave-assisted hydrothermal method with varying synthesis times. X-ray diffraction confirmed cubic structure without deleterious phases. Density functional theory simulations an indirect (K-L) bandgap energy 2.80 eV, electron transition between O-2p Ce-4f orbitals, which agrees value obtained using diffuse reflectance. Raman...

Single-phase perovskite structure BaZrxTi1−xO3 (BZT) (0.05⩽x⩽0.25) thin films were deposited on Pt–Ti–SiO2–Si substrates by the spin-coating technique. The structural modifications in studied using x-ray diffraction and micro-Raman scattering techniques. Lattice parameters calculated from data indicate an increase lattice (a axis) with increasing content of zirconium these films. Such Zr substitution also result variations phonon mode wave numbers, especially those lower for films,...

Pb 1−x Ca x TiO 3 (0.10⩽x⩽0.40) thin films on Pt/Ti/SiO2/Si(100) substrates were prepared by the soft solution process and their characteristics investigated as a function of calcium content (x). The structural modifications in studied using x-ray diffraction micro-Raman scattering techniques. Lattice parameters calculated from data indicate decrease lattice tetragonality with increasing these films. Raman spectra exhibited characteristic features pure PbTiO3 Variations phonon mode wave...

Hierarchical architecture self-assembled three-dimensional WO₃ and WO₃·Ag with high uniformity have been successfully obtained using peroxopolytungstic acid as precursor silver in a morphological engineering approach under moderate hydrothermal conditions.

We report on (magneto-) transport measurements of individual In2O3 nanowires. observed that the presence a weak disorder arising from doping and electron−boundary collisions leads to localization electrons as revealed by positive magnetoconductivity in large range temperatures (∼77 K). From temperature-dependent resistance data, electron−electron interaction was pointed out mechanism responsible for increase low temperature dominant source dephasing at temperatures. The experimental data...

Electrical conductive textured LaNiO3/SrTiO3 (100) thin films were successfully produced by the polymeric precursor method. A comparison between features of these LaNiO3 (LNO) when heat treated in a conventional furnace (CF) and domestic microwave (MW) oven is presented. The x-ray diffraction data indicated good crystallinity structural orientation along (h00) direction for both films. surface images obtained atomic force microscopy revealed similar roughness values, whereas LNO-MW present...

Hematite is considered to be the most promising material used as a photoanode for water splitting and here we utilized sintered hematite address fundamental electrical, electrochemical photoelectrochemical behavior of this semiconductor oxide.

We report on the growth and transport properties of single crystalline Sb doped SnO2 wires grown from chemical vapour deposition. While undoped samples presented semiconducting behaviour, ones clearly undergo a transition an insulating state (dR/dT<0) to metallic one (dR/dT>0) around 130−150 K depending doping level. Data analysis in framework metal-to-insulator theories allowed us investigate underlying physics: electron-electron electron-phonon interactions were identified as...

The application of the usual expressions to calculate capacitance-voltage (CV) profiles in samples with quantum dots gives erroneous results, mainly due presence characteristic negative differential capacitance a system dimensionality lower than 2. We developed simple electrostatic model CV these systems, and we applied it sample an InAs self-assembled order obtain informations about structure dots. As result, local distribution electrons (CV profile) was obtained.

Using low-resistance indium contacts, we measured some transport properties of undoped vapor-liquid-solid grown tin oxide monocrystals with a belt shape. From the measurements, two following conduction mechanisms were investigated: thermal activation and variable range hopping. An energy gap 3.8 eV was found. The confirmed by thermally activated measurements in between 10 300 K. For high temperatures (T>300 K), influence disorder caused superficial ions layer is measurable. electron...

This work describes the synthesis of highly conducting antimony‐doped tin oxide (ATO) nanocrystals prepared via a nonaqueous sol–gel route in size range 4–6 nm and provides insights into its electrical properties. The antimony composition was varied from 1 to 18 mol% lowest resistivity (4.0 × 10 −4 Ω·cm) observed at room temperature SnO 2 :8.8 Sb composition. samples were evaluated by X‐ray diffraction, high‐resolution transmission electron microscopy, energy‐dispersive spectroscopy,...

Transparent Conductive Oxides (TCOs) have been widely used as sensors for various hazardous gases. Among the most studied TCOs is SnO2, due to tin being an abundant material in nature, and therefore accessible moldable-like nanobelts. Sensors based on SnO2 nanobelts are generally quantified according interaction of atmosphere with its surface, changing conductance. The present study reports fabrication a nanobelt-based gas sensor, which electrical contacts self-assembled, thus do not need...

We have carried out dielectric and Raman spectroscopy studies at the 298–623 K temperature range in polycrystalline Pb0.70Sr0.30TiO3 thin films grown by a soft chemical method. The diffuse phase-transition behavior of was observed means constant versus curves, which show broad peak. Such confirmed later measurements up to 823 K, indicating that diffuselike phase transition takes place around 548–573 K. damping factor E(1TO) mode calculated using damped simple harmonic oscillator model. On...