João Roberto Moro

ORCID: 0000-0002-8251-3832
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About
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Research Areas
  • Diamond and Carbon-based Materials Research
  • Metal and Thin Film Mechanics
  • Semiconductor materials and devices
  • Chalcogenide Semiconductor Thin Films
  • Advanced materials and composites
  • Quantum Dots Synthesis And Properties
  • Tunneling and Rock Mechanics
  • Ion-surface interactions and analysis
  • Advanced Surface Polishing Techniques
  • Digital Transformation in Industry
  • Electrospun Nanofibers in Biomedical Applications
  • Electronic and Structural Properties of Oxides
  • Advanced Semiconductor Detectors and Materials
  • Analytical chemistry methods development
  • Transition Metal Oxide Nanomaterials
  • Metal Alloys Wear and Properties
  • Energy and Environment Impacts
  • Advanced Sensor Technologies Research
  • Analytical Chemistry and Sensors
  • High-Velocity Impact and Material Behavior
  • Photovoltaic Systems and Sustainability
  • Tissue Engineering and Regenerative Medicine
  • Cardiac Structural Anomalies and Repair
  • Mobile Agent-Based Network Management
  • Lubricants and Their Additives

Federal Institute of São Paulo
2012-2023

National Institute for Space Research
2013-2014

Universidade Estadual de Campinas (UNICAMP)
1981-2010

Universidade São Francisco
1998-2009

Hospital de Clínicas da Unicamp
1981

Silicon Nitride is largely used as the base material to manufacture cutting tools. Due its low thermal expansion coefficient it ideal candidate for CVD diamond deposition. In this work, we functionalized surface of silicon nitride inserts (Si 3 N 4 ) with a polymer (PDDA Poly (diallyldimethylamonium chloride - Mw 40000)) promote seeding nanodiamond particles. The was performed in water slurry containing nm particles dispersed by PSS (sodium4-styrenesulfonate) polymer. films, high nucleation...

10.4028/www.scientific.net/msf.727-728.1433 article EN Materials science forum 2012-08-01

This paper shows successful hindering of the negative effects cobalt binder in process coating WC-Co cutting tools with CVD diamond films. The strategy was creating a boron-rich layer on surface substrates as an interlayer to block Co migration. traditional boriding technique improved by preheating salt powders and controlling brittle region thickness substrate surface. These procedures produce tougher for growth. Adding CF4 gas mixture also enhanced adhesion films evaluated indentation...

10.1590/1516-1439.331014 article EN cc-by Materials Research 2015-10-01

This article reports on the study of high-quality boron-doped diamond films using admittance techniques. We have found two well-defined energy states at 74 and 340 meV, indicating that doping procedure has induced defects consequently provoked localization carriers. is a direct indication there are different coexisting conduction mechanisms for transport Additionally, we perform complementary resistivity experiments showing presence variable range hopping as dominant mechanism.

10.1063/1.2436984 article EN Journal of Applied Physics 2007-02-01

A systematic study of the infrared photoluminescence from deep centres in polycrystalline CdSe layers is presented. The authors observe two emission bands at about 0.92 mu m and 1.22 m. evolution band shape intensity quenching with temperature analysed using a semiclassical model, characteristic parameters are obtained. results shown to be consistent transitions involving selenium vacancies VSe oxygen impurities OSe.

10.1088/0022-3719/21/16/024 article EN Journal of Physics C Solid State Physics 1988-06-10

Surfaces with very poor mechanical and frictional properties can be improved, or even, acquire new similar to diamond if good adherent CVD film is obtained on it. In this work, nitrogen ions were sub-implanted pure molybdenum as a means enhance adherence. Deposition time from 2 up 60 h used for deposition of 10 400 µm thick films adherence substrate. Characterizations carried out by XPS, X-ray diffraction nano indentation prepared surfaces prior growth after the onset nucleation. The ionic...

10.1590/s1516-14392003000200028 article EN cc-by Materials Research 2003-06-01

The technological advances available have always helped to increase the performance and complexity of manufacturing processes, seeking meet growing demands an increasingly globalized market. In this sense, conventional printed circuit board (PCB) assembly systems generally a coupled linear work structure. This structure is characterized by low flexibility scalability, which directly impact final value product. Faced with challenge, article presents new methodological perspective, propose...

10.55905/oelv22n12-206 article EN cc-by-nc OBSERVATÓRIO DE LA ECONOMÍA LATINOAMERICANA 2024-12-26

Buscou-se a redução da tensão intrínseca causada pelas impurezas que se agregam no processo de crescimento um filme diamante obtido por deposição química partir fase vapor (CVD, do inglês Chemical Vapor Deposition) em reator filamento quente (HFCVD), sobre substrato silício <100> 250 µm espessura uma superfície grande área (45 cm²), através imersão amostra, solução saturada H2SO4 e CrO3 e, seguida, 1:1 H2O2:NH4OH. Após esse procedimento, nova etapa era realizada. O CVD foi identificado...

10.1590/s1517-70762008000300016 article PT cc-by Matéria (Rio de Janeiro) 2008-09-01

Abstract Semiconducting CdSe films have been electrodeposited on a variety of substrates by means two techniques. The processes nucleation, coalescence and growth accompanied ex‐situ scanning electron microscopy, in‐situ optical reflectance. We analyze the mode for different film thicknesses we discuss applications in solar cells other devices.

10.1002/bbpc.19870910436 article EN Berichte der Bunsengesellschaft für physikalische Chemie 1987-04-01

O preparo dos substratos, para o crescimento de filmes diamante CVD, é fundamental importância por diversos fatores. Um novo método preparação substratos molibdênio, jateamento óxido alumínio, apresentado e comparado com os métodos tradicionais preparo. As amostras CVD obtidas foram analisadas espectroscopia espalhamento RAMAN microscopia eletrônica varredura (MEV). Obtiveram-se boa qualidade uniformidade processo proposto tratamento do substrato molibdênio permitiu maior taxa que tradicionais.

10.1590/s0370-44672007000200004 article PT Rem Revista Escola de Minas 2007-06-01

Nowadays, the diamond grown by chemical vapor deposition (CVD) is seen economically as one of most interesting materials, due to its vast application, mainly in short-term, resulting from diamond’s unique properties. Its applications reach many technological areas, standing out mechanics area possibilities use cutting tools, tribological layers automobiles and aeronautical engines, heat sinks, surfaces protection for aggressive environments abrasive special devices which also add biological...

10.17563/rbav.v23i2.143 article EN Revista Brasileira de Aplicações de Vácuo 2008-03-09

Very accurate, durable and noiseless tools for many applications have been of great interest. Diamond-coated ultrasonic are excellent alternatives in this perspective, mainly cutting hard materials. However, the conventional technology diamond powder aggregation with nickel metallic binders could not withstand power. The grains easily peel off were enough while contact surfaces. This work presents studies concerning deposition CVD coatings on different forms substrates, very good adherence,...

10.17563/rbav.v25i2.70 article EN Revista Brasileira de Aplicações de Vácuo 2008-01-30

Abstract Background The reactivity of blood with non‐endothelial surface is a challenge for long‐term Ventricular Assist Devices development, usually made pure titanium, which despite being inert, low density and high mechanical resistance it does not avoid the thrombogenic responses. Here we tested modification on titanium Laser Induced Periodic Surface Structures followed by Diamond Like Carbon (DLC) coating in different thicknesses to customize wettability profile changing energy...

10.1111/aor.14683 article EN Artificial Organs 2023-11-28

e v a p o r t i n of CO gaseous atmosphere.

10.1051/jphyscol:1981122 article EN Le Journal de Physique Colloques 1981-01-01
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