A5018602757- Photonic and Optical Devices
- Advanced Photonic Communication Systems
- Semiconductor Lasers and Optical Devices
- Semiconductor Quantum Structures and Devices
- Nanowire Synthesis and Applications
- Photonic Crystals and Applications
- Silicon Nanostructures and Photoluminescence
- Optical Network Technologies
- Silicon and Solar Cell Technologies
- Topological Materials and Phenomena
- Thin-Film Transistor Technologies
- Ion-surface interactions and analysis
- Construction Project Management and Performance
- Graphene research and applications
- Ocular Surface and Contact Lens
- Climate change and permafrost
- Machine Learning in Materials Science
- Life Cycle Costing Analysis
- Inorganic Fluorides and Related Compounds
- 2D Materials and Applications
- BIM and Construction Integration
University of Arkansas at Fayetteville
2022-2025
Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in the laser performance have been bottlenecked by limited junction properties through conventional epitaxy wafer bonding. This work leverages semiconductor grafting to synthesize characterize optically pumped ridge edge-emitting with an AlGaAs nanomembrane transfer-printed onto epitaxially grown substrate, interfaced ultrathin Al2O3 layer. The...
Germanium tin (GeSn) is a tuneable narrow bandgap material, which has shown remarkable promise for the industry of near- and mid-infrared technologies high efficiency photodetectors laser devices.
Abstract High-quality monolithic Ge-on-Si is sought for CMOS-compatible optoelectronic devices. We examine the structural characteristics of grown by aspect ratio trapping (ART) method on a SiO 2 /Si(001) template in pre-patterned holes. Transmission electron microscopy and surface topography analysis revealed high-quality Ge islands overgrown from ART holes . The superior crystal quality growth was also confirmed comparing x-ray diffraction (XRD) data planar epilayer samples. XRD...
Abstract GeSn-based quantum wells (QWs) are of great interests for the development all-group-IV optoelectronic devices such as lasers. Using a GeSn buffer and SiGeSn barrier has been studied with aim obtaining direct bandgap well increasing carrier confinement. However, collection efficiency configuration remains unsatisfactory. In this work, single QW additional inserted between was grown characterized. Under relatively low injection, photoluminescence results show dramatically enhanced...
Group IV-based optoelectronic devices have been intensively pursued to enable full monolithic Si photonics integration. Such great potential for future needs of compact, low cost, and high -performance. Since group IV semiconductors are inhibited from efficient light emitters due their indirect bandgap nature, a novel material system, GeSn alloy, has attracted renewed interest. alloy yields true direct with Sn incorporation over 8%, it can be monolithically grown on making desirable...
A study of the mechanism Sn out-diffusion was performed by annealing Ge0.905Sn0.095 layers at 300 °C. The changes in composition and strain state were confirmed x-ray diffraction photoluminescence spectroscopy. Surface defects, appearing as particles, with highest density 3.5 × 108 cm−2 detected atomic force microscopy after for 2 h. GeSn layer stabilized more prolonged annealing, while particles decreased their size increased. Annealing results are discussed terms segregation subsequent...
Owing to its true direct bandgap and tunable energies,GeSn alloys are increasingly attractive as gain media for mid-IR lasers that can be monolithically integrated on Si. Demonstrations of optically pumped GeSn laser at room under pulsed condition cryogenic temperature continuous-wave excitation show great promise efficient electrically injected light sources Here we report using Fabry-Perot cavity with 20, 40, 80 micron ridge widths. A maximum operating 140 K lasing threshold 0.756 kA/cm2...
We demonstrated electrically injected GeSn laser with the threshold of 800 A/cm 2 at 77 K. The decreased compared to previous results was achieved by reducing optical loss and improving confinement. peak power measured as 1.25 mW/facet At 135 K, emission is 2656 nm.
This study presents the fabrication and characterizations of an Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn p-i-n double heterostructure (DHS) diode following grafting approach for enhanced optoelectronic applications. By integrating ultra-thin Al$_2$O$_3$ as a quantum tunneling layer enhancing interfacial double-side passivation, we achieved with substantial 1.186 eV conduction band barrier between AlGaAs GeSn, along low density states. The demonstrated impressive electrical...
Germanium tin (GeSn) is a material of interest for electronic and photonic device applications, but its development commercialization have been limited by quality issues lack availability from epitaxy suppliers. In this paper, we report initial studies in optimizing GeSn films deposited on Ge buffer layer grown 200-mm diameter silicon (Si) substrates with an ASM Epsilon 2000 chemical vapor deposition reactor designed commercial production. Using single-step growth process, Sn content up to...
GeSn-based SWIR lasers featuring imaging, sensing, and communications has gained dynamic development recently. However, the existing SiGeSn/GeSn double heterostructure lacks adequate electron confinement is insufficient for room temperature lasing. The recently demonstrated semiconductor grafting technique provides a viable approach towards AlGaAs/GeSn p-i-n heterojunctions with better high-quality interfaces, promising electrically pumped GeSn laser devices. Therefore, understanding...
Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been bottlenecked by limited junction properties through conventional epitaxy wafer bonding. This work leverages semiconductor grafting to synthesize characterize optically pumped ridge edge-emitting (EELs) with an AlGaAs nanomembrane (NM) transfer-printed onto epitaxially grown substrate, interfaced ultrathin Al2O3...
As one of two mainstream platforms, photonics integrated circuits (PICs) on Si platform benefits from the mature complementary metal-oxide-semiconductor (CMOS) manufacturing capabilities and allows for processing Si-based PICs with ultra-high volume low cost. Recent studies SiGeSn materials, which yield true direct bandgap sufficient Sn incorporation, hold great promise featuring scalable, cost-effective, power-efficient. While exciting developments in bulk devices including lasers, light...
Multi quantum wells (MQWs) structures based on (Si)GeSn hold promise for near- and mid-infrared light emission photodetection applications the Si platform. An MQW consisting of four GeSn/SiGeSn repetitions is grown by chemical vapor deposition (CVD) Ge/Si(001) virtual substrate to study interface quality its effect optical properties. Intermixing at interfaces found secondary ion mass spectrometry, which notably stronger larger depths. The depth-dependent photoluminescence (PL)...